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Register a new userIncidence of multilayers in chemically exfoliated graphene
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Added by
Bence G\\'abor M\\'arkus
Publication date
2018
fields
Physics
and research's language is
English
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An efficient route to synthesize macroscopic amounts of graphene is highly desired and a bulk characterization of such samples, in terms of the number of layers, is equally important. We present a Raman spectroscopy-based method to determine the distribution of the number of graphene layers in chemically exfoliated graphene. We utilize a controlled vapor-phase potassium intercalation technique and identify a lightly doped stage, where the Raman modes of undoped and doped few-layer graphene flakes coexist. The spectra can be unambiguously distinguished from alkali doped graphite, and a modeling with the distribution of the layers yields an upper limit of flake thickness of five layers with a significant single-layer graphene content. Complementary statistical AFM measurements on individual few-layer graphene flakes find a consistent distribution of the layer numbers.
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We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.
Resonant scatterers such as hydrogen adatoms can strongly enhance the low energy density of states in graphene. Here, we study the impact of these impurities on the electronic screening. We find a two-faced behavior: Kubo formula calculations reveal an increased dielectric function $varepsilon$ upon creation of midgap states but no metallic divergence of the static $varepsilon$ at small momentum transfer $qto 0$. This bad metal behavior manifests also in the dynamic polarization function and can be directly measured by means of electron energy loss spectroscopy. A new length scale $l_c$ beyond which screening is suppressed emerges, which we identify with the Anderson localization length.
The advent of topological phases of matter revealed a variety of observed boundary phenomena, such as chiral and helical modes found at the edges of two-dimensional (2D) topological insulators. Antichiral states in 2D semimetals, i.e., copropagating edge modes on opposite edges compensated by a counterpropagating bulk current, are also predicted, but, to date, no realization of such states in a solid-state system has been found. Here, we put forward a procedure to realize antichiral states in twisted van der Waals multilayers, by combining the electronic Dirac-cone spectra of each layer through the combination of the orbital moire superstructure, an in-plane magnetic field, and inter-layer bias voltage. In particular, we demonstrate that a twisted van der Waals heterostructure consisting of graphene/two layers of hexagonal boron nitride [(hBN)$_2$]/graphene will show antichiral states at in-plane magnetic fields of 8 T, for a rotation angle of 0.2$^{circ}$ between the graphene layers. Our findings engender a controllable procedure to engineer antichiral states in solid-state systems, as well as in quantum engineered metamaterials.
We formulate the chiral decomposition rules that govern the electronic structure of a broad family of twisted $N+M$ multilayer graphene configurations that combine arbitrary stacking order and a mutual twist. We show that at the magic angle in the chiral limit the low-energy bands of such systems are composed of chiral pseudospin doublets which are energetically entangled with two flat bands per valley induced by the moire superlattice potential. The analytic analysis is supported by explicit numerical calculations based on realistic parameterization. We further show that applying vertical displacement fields can open up energy gaps between the pseudospin doublets and the two flat bands, such that the flat bands may carry nonzero valley Chern numbers. These results provide guidelines for the rational design of various topological and correlated states in generic twisted graphene multilayers.
Layered van der Waals semimetallic $T_mathrm{d}$-WTe$_{2}$, exhibiting intriguing properties which include non-saturating extreme positive magnetoresistance (MR) and tunable chiral anomaly, has emerged as model topological type-II Weyl semimetal system. Here, $sim$45 nm thick mechanically exfoliated flakes of $T_mathrm{d}$-WTe$_{2}$ are studied $via$ atomic force microscopy, Raman spectroscopy, low-$T$/high-$mu_{0}H$ magnetotransport measurements and optical reflectivity. The contribution of anisotropy of the Fermi liquid state to the origin of the large positive transverse $mathrm{MR}_perp$ and the signature of chiral anomaly of the type-II Weyl fermions are reported. The samples are found to be stable in air and no oxidation or degradation of the electronic properties are observed. A transverse $mathrm{MR}_perp$ $sim$1200,% and an average carrier mobility of $5000$, cm$^{2}$V$^{-1}$s$^{-1}$ at $T=5,mathrm{K}$ for an applied perpendicular field $mu_{0}H_{perp} = 7,mathrm{T}$ are established. The system follows a Fermi liquid model for $Tleq50,mathrm{K}$ and the anisotropy of the Fermi surface is concluded to be at the origin of the observed positive MR. The anisotropy of the electronic behaviour is also confirmed by optical reflectivity measurements. The relative orientation of the crystal axes and of the applied electric and magnetic fields is proven to give rise to the observed chiral anomaly in the in-plane magnetotransport.
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