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Register a new userThermal Stability Study of Transition Metal Perovskite Sulfides
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Transition metal perovskite chalcogenides, a class of materials with rich tunability in functionalities, are gaining increased attention as candidate materials for renewable energy applications. Perovskite oxides are considered excellent n-type thermoelectric materials. Compared to oxide counterparts, we expect the chalcogenides to possess more favorable thermoelectric properties such as lower lattice thermal conductivity and smaller band gap, making them promising material candidates for high temperature thermoelectrics. Thus, it is necessary to study the thermal properties of these materials in detail, especially thermal stability, to evaluate their potential. In this work, we report the synthesis and thermal stability study of five compounds, alpha-SrZrS$_3$, beta-SrZrS$_3$, BaZrS$_3$, Ba$_2$ZrS$_4$, and Ba$_3$Zr$_2$S$_7$. These materials cover several structural types including distorted perovskite, needle-like, and Ruddlesden-Popper phases. Differential scanning calorimeter and thermo-gravimetric analysis measurements were performed up to 1200{deg}C in air. Structural and chemical characterizations such as X-ray diffraction, Raman spectroscopy, and energy dispersive analytical X-ray spectroscopy were performed on all the samples before and after the heat treatment to understand the oxidation process. Our studies show that perovskite chalcogenides possess excellent thermal stability in air at least up to 600{deg}C.
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Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO3), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible doping controllability at room temperature. This article reviews recent progress in the doped BaSnO3 system, discussing the wide physical properties, electron-scattering mechanism, and demonstration of key semiconducting devices such as pn diodes and field-effect transistors. Moreover, we discuss the pathways to achieving two-dimensional electron gases at the interface between BaSnO3 and other perovskite oxides and describe remaining challenges for observing novel quantum phenomena at the heterointerface.
Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which are appropriate for optoelectronic applications, especially solar energy conversion. Despite several promising theoretical predictions, very little experimental studies on their physical properties are currently available, especially optical properties. We report a new synthetic route towards high quality bulk ceramic TMPCs and systematic study of three phases, SrZrS3 in two different room temperature stabilized phases and one of BaZrS3. All three materials were synthesized with a catalyzed solid-state reaction process in sealed ampoules. Structural and chemical characterizations establish high quality of the samples, which is confirmed by the intense room temperature photoluminescence (PL) spectra showing direct band gaps around 1.53eV, 2.13eV and 1.81eV respectively. The potential of these materials for solar energy conversion was evaluated by measurement of PL quantum efficiency and estimate of quasi Fermi level splitting.
We report an ab-initio study of the stability and electronic properties of transition metal silicides in order to study their potential for high temperature thermoelectric applications. We focus on the family M5Si3 (M = Ta, W) which is stable up to about 2000 {deg}C. We first investigate the structural stability of the two compounds and then determine the thermopower of the equilibrium structure using the electronic density of states and Motts law. We find that W5Si3 has a relatively large thermopower but probably not sufficient enough for thermoelectric applications.
We performed a first-principles study of the structural, vibrational, electronic and magnetic properties of NaMnF3 under applied isotropic pressure. We found that NaMnF3 undergoes a reconstructive phase transition at 8 GPa from the Pnma distorted perovskite structure toward the Cmcm post-perovskite structure. This is confirmed by a sudden change of the Mn-F-Mn bondings where the crystal goes from corner shared octahedra in the Pnma phase to edge shared octahedra in the Cmcm phase. The magnetic ordering also changes from a G-type antiferromagnetic ordering in the Pnma phase to a C-type antiferromagnetic ordering in the Cmcm phase. Interestingly, we found that the high-spin d-orbital filling is kept at the phase transition which has never been observed in the known magnetic post-perovskite structures. We also found a highly non-collinear magnetic ordering in the Cmcm post-perovskite phase that drives a large ferromagnetic canting of the spins. We discuss the validity of these results with respect to the U and J parameter of the GGA+U exchange correlation functional used in our study and conclude that large spin canting is a promising property of the post-perovskite fluoride compounds.
Using density functional theory (DFT), we study how the stability of individual magnetic skyrmions in an ultrathin transition-metal film can be controlled via the external electric fields. For applied electric fields of $mathcal{E}$= $pm 0.5$ V/{AA}, we find changes from 8 to 30$%$ of the Heisenberg exchange, the Dzyaloshinskii-Moriya interaction, the magnetocrystalline anisotropy energy, and the higher-order exchange interactions. Based on atomistic spin simulations using the DFT parameters, we find that the energy barriers for electric field assisted skyrmion writing and deleting can vary by up to a factor of three more than the variations of the interactions. This unexpected result originates from the electric field induced shifts of the critical magnetic field, marking the onset of the field-polarized phase, which exhibits metastable skyrmions. The shift leads to an electric field dependent change of the skyrmion radius at a fixed magnetic field and explains the enhanced energy barrier variations.
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