Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userCharacterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
302
0
0.0
(
0
)
Added by
Francisco Jose Iguaz Gutierrez Dr.
Publication date
2018
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pre-amplifier and discriminator flavors with an external injection signal and an iron source (5.9,keV x-rays).
rate research
Read More
We present a gigabit transceiver prototype Application Specific Integrated Circuit (ASIC), GBCR, for the ATLAS Inner Tracker (ITk) Pixel detector readout upgrade. GBCR is designed in a 65-nm CMOS technology and consists of four upstream receiver channels, a downstream transmitter channel, and an Inter-Integrated Circuit (I2C) slave. The upstream channels receive the data at 5.12 Gbps passing through 5-meter 34-American Wire Gauge (AWG) Twin-axial (Twinax) cables, equalize them, retime them with a recovered clock, and then drive an optical transmitter. The downstream channel receives the data at 2.56 Gbps from an optical receiver and drives the cable as same as the upstream channels. The jitter of the upstream channel output is measured to be 35 ps (peak-peak) when the Clock-Data Recovery (CDR) module is turned on and the jitter of the downstream channel output after the cable is 138 ps (peak-peak). The power consumption of each upstream channel is 72 mW when the CDR module is turned on and the downstream channel consumes 27 mW. GBCR survives the total ionizing dose of 200 kGy.
This paper presents the design and simulation results of a gigabit transceiver Application Specific Integrated Circuit (ASIC) called GBCR for the ATLAS Inner Tracker (ITk) Pixel detector readout upgrade. GBCR has four upstream receiver channels and a downstream transmitter channel. Each upstream channel operates at 5.12 Gbps, while the downstream channel operates at 2.56 Gbps. In each upstream channel, GBCR equalizes a signal received through a 5-meter 34-American Wire Gauge (AWG) twin-axial cable, retimes the data with a recovered clock, and drives an optical transmitter. In the downstream channel, GBCR receives the data from an optical receiver and drives the same type of cable as the upstream channels. The output jitter of an upstream channel is 26.5 ps and the jitter of the downstream channel after the cable is 33.5 ps. Each upstream channel consumes 78 mW and each downstream channel consumes 27 mW. Simulation results of the upstream test channel suggest that a significant jitter reduction could be achieved with minimally increased power consumption by using a Feed Forward Equalizer (FFE) + Decision Feedback Equalization (DFE) in addition to the linear equalization of the baseline channel. GBCR is designed in a 65-nm CMOS technology.
Pixel sensors using 8 CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 $times$ 10$^{15}$ n$_{rm eq}$ cm$^{-2}$. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of $10^{15}~text{n}_text{eq}/text{cm}^2$ and detection efficiencies above $99.5~%$. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.
In this paper we present a novel, quadruple well process developed in a modern 0.18mu CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50mu pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
