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Register a new userCore electron binding energies of adsorbates on Cu(111) from first-principles calculations
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Core-level X-ray Photoelectron Spectroscopy (XPS) is often used to study the surfaces of heterogeneous copper-based catalysts, but the interpretation of measured spectra, in particular the assignment of peaks to adsorbed species, can be extremely challenging. In this study we demonstrate that first principles calculations using the delta Self Consistent Field (delta-SCF) method can be used to guide the analysis of experimental core-level spectra of complex surfaces relevant to heterogeneous catalysis. Specifically, we calculate core-level binding energy shifts for a series of adsorbates on Cu(111) and show that the resulting C1s and O1s binding energy shifts for adsorbed CO, CO2, C2H4, HCOO, CH3O, H2O, OH and a surface oxide on Cu(111) are in good overall agreement with the experimental literature. In the few cases where the agreement is less good, the theoretical results may indicate the need to re-examine experimental peak assignments.
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Core-electron x-ray photoelectron spectroscopy is a powerful technique for studying the electronic structure and chemical composition of molecules, solids and surfaces. However, the interpretation of measured spectra and the assignment of peaks to atoms in specific chemical environments is often challenging. Here, we address this problem and introduce a parameter-free computational approach for calculating absolute core-electron binding energies. In particular, we demonstrate that accurate absolute binding energies can be obtained from the total energy difference of the ground state and a state with an explicit core hole when exchange and correlation effects are described by a recently developed meta-generalized gradient approximation and relativistic effects are included even for light elements. We carry out calculations for molecules, solids and surface species and find excellent agreement with available experimental measurements. For example, we find a mean absolute error of only 0.16 eV for a reference set of 103 molecular core-electron binding energies. The capability to calculate accurate absolute core-electron binding energies will enable new insights into a wide range of chemical surface processes that are studied by x-ray photoelectron spectroscopy.
We investigate by first-principles simulations the resonant electron-transfer lifetime from the excited state of an organic adsorbate to a semiconductor surface, namely isonicotinic acid on rutile TiO$_2$(110). The molecule-substrate interaction is described using density functional theory, while the effect of a truly semi-infinite substrate is taken into account by Greens function techniques. Excitonic effects due to the presence of core-excited atoms in the molecule are shown to be instrumental to understand the electron-transfer times measured using the so-called core-hole-clock technique. In particular, for the isonicotinic acid on TiO$_2$(110), we find that the charge injection from the LUMO is quenched since this state lies within the substrate band gap. We compute the resonant charge-transfer times from LUMO+1 and LUMO+2, and systematically investigate the dependence of the elastic lifetimes of these states on the alignment among adsorbate and substrate states.
Theoretical calculations of core electron binding energies are important for aiding the interpretation of experimental core level photoelectron spectra. In previous work, the $Delta$-Self-Consistent-Field ($Delta$-SCF) method based on density functional theory has been shown to yield highly accurate 1s and 2p binding energies in free molecules. However, most experimental work is concerned with solids, not gases. In this study, we demonstrate the application of the all-electron $Delta$-SCF method to periodic systems. A consideration of the experimentally accessible points of reference leads to the definition of a core electron binding energy in a solid as the difference between the total energies of two $N-1$ electron systems: one with an explicit, localized core hole, and one with an electron removed from the highest occupied state. The calculation of each of these quantities is addressed. In addition, the analogy between a localized core hole and a charged defect in a solid is highlighted, and the extrapolation of calculated core electron binding energies to the infinite supercell limit is discussed. It is found that the extrapolated values of the core electron binding energies from periodic $Delta$-SCF calculations agree well with experimental results for both metallic and insulating systems, with a mean absolute error of 0.24 eV for the 15 core levels considered in this study.
We present a method to efficiently combine the computation of electron-electron and electron-phonon self-energies, which enables the evaluation of electron-phonon coupling at the $G_0W_0$ level of theory for systems with hundreds of atoms. In addition, our approach, which is a generalization of a method recently proposed for molecules [J. Chem. Theory Comput. 2018, 14, 6269-6275], enables the inclusion of non-adiabatic and temperature effects at no additional computational cost. We present results for diamond and defects in diamond and discuss the importance of numerically accurate $G_0W_0$ band structures to obtain robust predictions of zero point renormalization (ZPR) of band gaps, and of the inclusion of non-adiabatic effect to accurately compute the ZPR of defect states in the band gap.
We present an ab initio study of the interface energies of cubic yttria-stabilized zirconia (YSZ) epitaxial layers on a (0001)_{alpha-Al_2O_3} substrate. The interfaces are modelled using a supercell geometry and the calculations are carried out in the framework of density-functional theory (DFT) and the local-density approximation (LDA) using the projector-augmented-wave (PAW) pseudopotential approach. Our calculations clearly demonstrate that the (111)_{YSZ} || (0001)_{alpha-Al_2O_3} interface energy is lower than that of (100)_{YSZ} || (0001)_{alpha-Al_2O_3}. This result is central to understanding the behaviour of YSZ thin solid film islanding on (0001)_{alpha-Al_2O_3} substrates, either flat or in presence of defects.
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