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Register a new userInterface energies of (100)_{YSZ} and (111)_{YSZ} epitaxial islands on (0001)_{alpha-Al_2O_3} substrates from first principles
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We present an ab initio study of the interface energies of cubic yttria-stabilized zirconia (YSZ) epitaxial layers on a (0001)_{alpha-Al_2O_3} substrate. The interfaces are modelled using a supercell geometry and the calculations are carried out in the framework of density-functional theory (DFT) and the local-density approximation (LDA) using the projector-augmented-wave (PAW) pseudopotential approach. Our calculations clearly demonstrate that the (111)_{YSZ} || (0001)_{alpha-Al_2O_3} interface energy is lower than that of (100)_{YSZ} || (0001)_{alpha-Al_2O_3}. This result is central to understanding the behaviour of YSZ thin solid film islanding on (0001)_{alpha-Al_2O_3} substrates, either flat or in presence of defects.
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Core-level X-ray Photoelectron Spectroscopy (XPS) is often used to study the surfaces of heterogeneous copper-based catalysts, but the interpretation of measured spectra, in particular the assignment of peaks to adsorbed species, can be extremely challenging. In this study we demonstrate that first principles calculations using the delta Self Consistent Field (delta-SCF) method can be used to guide the analysis of experimental core-level spectra of complex surfaces relevant to heterogeneous catalysis. Specifically, we calculate core-level binding energy shifts for a series of adsorbates on Cu(111) and show that the resulting C1s and O1s binding energy shifts for adsorbed CO, CO2, C2H4, HCOO, CH3O, H2O, OH and a surface oxide on Cu(111) are in good overall agreement with the experimental literature. In the few cases where the agreement is less good, the theoretical results may indicate the need to re-examine experimental peak assignments.
This paper has been withdrawn by first author KM Seemann.
We present calculations of the magnetic ground states of Cr trimers in different geometries on top of a Au(111) surface. By using a least square fit method based on a fully relativistic embedded-cluster Greens function method first we determined the parameters of a classical vector-spin model consisting of second and fourth order interactions. The newly developed method requires no symmetry constraints, therefore, it is throughout applicable for small nanoparticles of arbitrary geometry. The magnetic ground states were then found by solving the Landau-Lifshitz-Gilbert equations. In all considered cases the configurational energy of the Cr trimers is dominated by large antiferromagnetic nearest neighbor interactions, whilst biquadratic spin-interactions have the second largest contributions to the energy. We find that an equilateral Cr trimer exhibits a frustrated 120$^circ$ Neel type of ground state with a small out-of-plane component of the magnetization and we show that the Dzyaloshinsky-Moriya interactions determine the chirality of the magnetic ground state. In cases of a linear chain and an isosceles trimer collinear antiferromagnetic ground states are obtained with a magnetization lying parallel to the surface.
We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer (~1.7A compared to 0.63A). The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the (000-1) surface, as predicted previously by ab intio calculations.
Epitaxy of ZnO layers on cubic GaP (111) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect to GaP substrate determined using phi scans in high resolution X-ray diffraction measurements are (0001) ZnO || (111) GaP and (-1 2 -1 0) ZnO || (-1 1 0) GaP respectively. Our results of epitaxy of ZnO and its intense excitonic photoluminescence with very weak defect luminescence suggest that (111) oriented GaP can be a potential buffer layer choice for the integration of ZnO based optoelectronic devices on Si(111) substrates.
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