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Register a new userFMR-related phenomena in spintronic devices
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Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or other emerging material with strong spin-orbit coupling (SOC), the charge currents induce spin currents or spin accumulations via SOC. The generated spin currents can exert spin-orbit torques (SOTs) on an adjacent ferromagnet, which opens up a new way to realize magnetization dynamics and switching of the ferromagnetic layer for spintronic devices. In the SOT scheme, the charge-to-spin interconversion efficiency (SOT efficiency) is an important figure of merit for applications. For the effective characterization of this efficiency, the ferromagnetic resonance (FMR) based methods, such as the spin transfer torque ferromagnetic resonance (ST-FMR) and the spin pumping, are common utilized in addition to low frequency harmonic or dc measurements. In this review, we focus on the ST-FMR measurements for the evaluation of the SOT efficiency. We provide a brief summary of the different ST-FMR setups and data analysis methods. We then discuss ST-FMR and SOT studies in various materials, including heavy metals and alloys, topological insulators, two dimensional (2D) materials, interfaces with strong Rashba effect, antiferromagnetic materials, two dimensional electron gas (2DEG) in oxide materials and oxidized nonmagnetic materials.
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Significant progress has been made in answering fundamental questions about how and, more importantly, on what time scales interactions between electrons, spins, and phonons occur in solid state materials. These complex interactions are leading to the first real applications of terahertz (THz) spintronics: THz emitters that can compete with traditional THz sources and provide additional functionalities enabled by the spin degree of freedom. This tutorial article is intended to provide the background necessary to understand, use, and improve THz spintronic emitters. A particular focus is the introduction of the physical effects that underlie the operation of spintronic THz emitters. These effects were, for the most part, first discovered through traditional spin-transport and spintronic studies. We therefore begin with a review of the historical background and current theoretical understanding of ultrafast spin physics that has been developed over the past twenty-five years. We then discuss standard experimental techniques for the characterization of spintronic THz emitters and - more broadly - ultrafast magnetic phenomena. We next present the principles and methods of the synthesis and fabrication of various types of spintronic THz emitters. Finally, we review recent developments in this exciting field including the integration of novel material platforms such as topological insulators as well as antiferromagnets and materials with unconventional spin textures.
The electronic properties of lanthanide (from Eu to Tm) impurities in wurtzite gallium nitride and zinc oxide were investigated by first principles calculations, using an all electron methodology plus a Hubbard potential correction. The results indicated that the 4f-related energy levels remain outside the bandgap in both materials, in good agreement with a recent phenomenological model, based on experimental data. Additionally, zinc oxide doped with lanthanide impurities became an n-type material, showing a coupling between the 4f-related spin polarized states and the carriers. This coupling may generate spin polarized currents, which could lead to applications in spintronic devices.
Spintronic nanodevices have ultrafast nonlinear dynamic and recurrence behaviors on a nanosecond scale that promises to enable spintronic reservoir computing (RC) system. Here two physical RC systems based on a single magnetic skyrmion memristor (MSM) and 24 spin-torque nano-oscillators (STNOs) were proposed and modeled to process image classification task and nonlinear dynamic system prediction, respectively. Based on our micromagnetic simulation results on the nonlinear responses of MSM and STNO with current pulses stimulation, the handwritten digits recognition task domesticates that an RC system using one single MSM has the outstanding performance on image classification. In addition, the complex unknown nonlinear dynamic problems can also be well solved by a physical RC system consisted of 24 STNOs confirmed in a second-order nonlinear dynamic system and NARMA10 tasks. The capability of both high accuracy and fast information processing promises to enable one type of brain-like chip based on spintronics for various artificial intelligence tasks.
Optical orientation is a highly efficient tool for the generation of nonequilibrium spin polarization in semiconductors. Combined with spin-polarized transport it offers new functionalities for conventional electronic devices, such as pn junction bipolar diodes or transistors. In nominally nonmagnetic junctions optical orientation can provide a source for spin capacitance--the bias-dependent nonequilibrium spin accumulation--or for spin-polarized current in bipolar spin-polarized solar cells. In magnetic junctions, the nonequilibrium spin polarization generated by spin orientation in a proximity of an equilibrium magnetization gives rise to the spin-voltaic effect (a realization of the Silsbee-Johnson coupling), enabling efficient control of electrical properties such as the I-V characteristics of the junctions by magnetic and optical fields. This article reviews the main results of investigations of spin-polarized and magnetic pn junctions, from spin capacitance to the spin-voltaic effect.
We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal metal due to the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin-orbit torques, and point out new developments related to the SMR.
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