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Register a new userLarge magneto-optical Kerr effect and imaging of magnetic octupole domains in an antiferromagnetic metal
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When a polarized light beam is incident upon the surface of a magnetic material, the reflected light undergoes a polarization rotation. This magneto-optical Kerr effect (MOKE) has been intensively studied in a variety of ferro- and ferrimagnetic materials because it provides a powerful probe for electronic and magnetic properties as well as for various applications including magneto-optical recording. Recently, there has been a surge of interest in antiferromagnets (AFMs) as prospective spintronic materials for high-density and ultrafast memory devices, owing to their vanishingly small stray field and orders of magnitude faster spin dynamics compared to their ferromagnetic counterparts. In fact, the MOKE has proven useful for the study and application of the antiferromagnetic (AF) state. Although limited to insulators, certain types of AFMs are known to exhibit a large MOKE, as they are weak ferromagnets due to canting of the otherwise collinear spin structure. Here we report the first observation of a large MOKE signal in an AF metal at room temperature. In particular, we find that despite a vanishingly small magnetization of $M sim$0.002 $mu_{rm B}$/Mn, the non-collinear AF metal Mn$_3$Sn exhibits a large zero-field MOKE with a polar Kerr rotation angle of 20 milli-degrees, comparable to ferromagnetic metals. Our first-principles calculations have clarified that ferroic ordering of magnetic octupoles in the non-collinear Neel state may cause a large MOKE even in its fully compensated AF state without spin magnetization. This large MOKE further allows imaging of the magnetic octupole domains and their reversal induced by magnetic field. The observation of a large MOKE in an AF metal should open new avenues for the study of domain dynamics as well as spintronics using AFMs.
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Recent demonstrations of electrical detection and manipulation of antiferromagnets (AFMs) have opened new opportunities towards robust and ultrafast spintronics devices. However, it is difficult to establish the connection between the spin-transport behavior and the microscopic AFM domain states due to the lack of the real-time AFM domain imaging technique under the electric field. Here we report a significant Voigt rotation up to 60 mdeg in thin NiO(001) films at room temperature. Such large Voigt rotation allows us to directly observe AFM domains in thin-film NiO by utilizing a wide-field optical microscope. Further complementary XMLD-PEEM measurement confirms that the Voigt contrast originates from the NiO AFM order. We examine the domain pattern evolution at a wide range of temperature and with the application of external magnetic field. Comparing to large-scale-facility techniques such as the X-ray photoemission electron microscopy, the use with a wide-field, tabletop optical imaging method enables straightforward access to domain configurations of single-layer AFMs.
Antiferromagnetic metals attract tremendous interest for memory applications due to their expected fast response dynamics in the terahertz frequency regime. Reading from and writing information into these materials is not easily achievable using magnetic fields, due to weak high-order magneto-optical signals and robustness of the magnetic structure against external magnetic fields. Polarized electromagnetic radiation is a promising alternative for probing their response, however, when ideal antiferromagnetic symmetry is present, this response vanishes. Hence, in this work we combine first-principles simulations with measurements of the polar magneto-optical Kerr effect under external magnetic fields, to study magneto-optical response of antiferromagnetic M$_2$As (M=Cr, Mn, and Fe). We devise a computational scheme to compute the magnetic susceptibility from total-energy changes using constraints on magnetic-moment tilting. Our predictions of the spectral dependence of polar magneto-optical Kerr rotation and ellipticity allow us to attribute these effects to breaking of the magnetic symmetry. We show that tilting affects the exchange interaction, while the spin-orbit interaction remains unaffected as the tilting angle changes. Our work provides understanding of the polar magneto-optical Kerr effect on a band structure level and underscores the importance of the magnetic susceptibility when searching for materials with large magneto-optical response.
Magneto-optical spectroscopy based on the transverse magneto-optical Kerr effect (TMOKE) is a sensitive method for investigation of magnetically-ordered media. However, in magnetic materials the optical transitions are usually characterized by spectrally broad resonances with widths considerably exceeding the Zeeman splitting in the magnetic field. Here we investigate experimentally and theoretically the TMOKE in the vicinity of relatively narrow optical resonances provided by confined quantum systems. For experimental demonstration we use the exciton resonance in a (Cd,Mn)Te diluted magnetic semiconductor quantum well, where the strong exchange interaction with magnetic ions enables the giant Zeeman splitting of exciton spin states $Delta$ in magnetic fields of a few Tesla. In the weak coupling regime, when the splitting $Delta$ is smaller than the spectral broadening of the optical transitions $Gamma$, the TMOKE magnitude grows linearly with the increase of the Zeeman splitting and its spectrum has an S-shape, which remains virtually unchanged in this range. In the strong coupling regime ($Delta>Gamma$) the TMOKE magnitude saturates, while its spectrum is strongly modified resulting in the appearance of two separate peaks. The TMOKE is sensitive not only to the sample surface but can be used to probe the confined electronic states in depth if the upper layer is sufficiently transparent. Our results demonstrate that TMOKE of spectrally narrow resonances serves as a versatile tool for probing the charge and spin structure of electronic states in various confined quantum systems and can be used for spin tomography in combination with the conventional polar Kerr effect.
We have performed a systematic magneto-optical Kerr spectroscopy study of GaMnAs with varying Mn densities as a function of temperature, magnetic field, and photon energy. Unlike previous studies, the magnetization easy axis was perpendicular to the sample surface, allowing us to take remanent polar Kerr spectra in the absence of an external magnetic field. The remanent Kerr angle strongly depended on the photon energy, exhibiting a large positive peak at $sim1.7$ eV. This peak increased in intensity and blue-shifted with Mn doping and further blue-shifted with annealing. Using a 30-band ${bf kcdot p}$ model with antiferromagnetic $s,p$-$d$ exchange interaction, we calculated the dielectric tensor of GaMnAs in the interband transition region, assuming that our samples are in the metallic regime and the impurity band has merged with the valence band. We successfully reproduced the observed spectra without emph{ad hoc} introduction of the optical transitions originated from impurity states in the band gap. These results lead us to conclude that above-bandgap magneto-optical Kerr rotation in ferromagnetic GaMnAs is predominantly determined by interband transitions between the conduction and valence bands.
Antiferromagnetic (AFM) domains in ultrathin CoO(001) films are imaged by a wide-field optical microscopy using magneto-optical birefringence effect. The magnetic origin of observed optical contrast is confirmed by the spin orientation manipulation through exchange coupling in Fe/CoO(001) bilayer. The finite size effect of ordering temperature for ultrathin single crystal CoO film is revealed by the thickness and temperature dependent measurement of birefringence contrast. The magneto-optical birefringence effect is found to strongly depend on the photon energy of incident light, and a surprising large polarization rotation angle up to 168.5 mdeg is obtained from a 4.6 nm CoO film with a blue light source, making it possible to further investigate the evolution of AFM domains in AFM ultrathin film under external field.
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