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Polar magneto-optical Kerr effect in antiferromagnetic M$_2$As (M=Cr, Mn, Fe) under an external magnetic field

87   0   0.0 ( 0 )
 Added by Kisung Kang
 Publication date 2020
  fields Physics
and research's language is English




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Antiferromagnetic metals attract tremendous interest for memory applications due to their expected fast response dynamics in the terahertz frequency regime. Reading from and writing information into these materials is not easily achievable using magnetic fields, due to weak high-order magneto-optical signals and robustness of the magnetic structure against external magnetic fields. Polarized electromagnetic radiation is a promising alternative for probing their response, however, when ideal antiferromagnetic symmetry is present, this response vanishes. Hence, in this work we combine first-principles simulations with measurements of the polar magneto-optical Kerr effect under external magnetic fields, to study magneto-optical response of antiferromagnetic M$_2$As (M=Cr, Mn, and Fe). We devise a computational scheme to compute the magnetic susceptibility from total-energy changes using constraints on magnetic-moment tilting. Our predictions of the spectral dependence of polar magneto-optical Kerr rotation and ellipticity allow us to attribute these effects to breaking of the magnetic symmetry. We show that tilting affects the exchange interaction, while the spin-orbit interaction remains unaffected as the tilting angle changes. Our work provides understanding of the polar magneto-optical Kerr effect on a band structure level and underscores the importance of the magnetic susceptibility when searching for materials with large magneto-optical response.



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When a polarized light beam is incident upon the surface of a magnetic material, the reflected light undergoes a polarization rotation. This magneto-optical Kerr effect (MOKE) has been intensively studied in a variety of ferro- and ferrimagnetic materials because it provides a powerful probe for electronic and magnetic properties as well as for various applications including magneto-optical recording. Recently, there has been a surge of interest in antiferromagnets (AFMs) as prospective spintronic materials for high-density and ultrafast memory devices, owing to their vanishingly small stray field and orders of magnitude faster spin dynamics compared to their ferromagnetic counterparts. In fact, the MOKE has proven useful for the study and application of the antiferromagnetic (AF) state. Although limited to insulators, certain types of AFMs are known to exhibit a large MOKE, as they are weak ferromagnets due to canting of the otherwise collinear spin structure. Here we report the first observation of a large MOKE signal in an AF metal at room temperature. In particular, we find that despite a vanishingly small magnetization of $M sim$0.002 $mu_{rm B}$/Mn, the non-collinear AF metal Mn$_3$Sn exhibits a large zero-field MOKE with a polar Kerr rotation angle of 20 milli-degrees, comparable to ferromagnetic metals. Our first-principles calculations have clarified that ferroic ordering of magnetic octupoles in the non-collinear Neel state may cause a large MOKE even in its fully compensated AF state without spin magnetization. This large MOKE further allows imaging of the magnetic octupole domains and their reversal induced by magnetic field. The observation of a large MOKE in an AF metal should open new avenues for the study of domain dynamics as well as spintronics using AFMs.
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88 - Lijun Zhu , Liane Brandt , 2016
We report the engineering of the polar magnetooptical (MO) Kerr effect in perpendicularly magnetized L10-MnAl epitaxial films with remarkably tuned magnetization, strain, and structural disorder by varying substrate temperature (Ts) during molecular-beam epitaxy growth. The Kerr rotation was enhanced by a factor of up to 5 with Ts increasing from 150 to 350 oC as a direct consequence of the improvement of the magnetization. A similar remarkable tuning effect was also observed on the Kerr ellipticity and the magnitude of the complex Kerr angle, while the phase of the complex Kerr angle appears to be independent of the magnetization. The combination of the good semiconductor compatibility, the moderate coercivity of 0.3-8.2 kOe, the tunable polar MO Kerr effect of up to ~0.034o, and giant spin procession frequencies of up to ~180 GHz makes L10-MnAl films a very interesting MO material. Our results give insights on both the microscopic mechanisms of the MO Kerr effect in L10-MnAl alloys and their scientific and technological application potential in the emerging spintronics and ultrafast MO modulators.
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