No Arabic abstract
Employing the Bloch eigenmode matching approach, we numerically study the evolution of individual quantum Hall edge states with respect to disorder. As shown by the two-parameter renormalization group flow of the Hall and Thouless conductances, quantum Hall edge states with high Chern number n are completely different from that of n=1 case. Two categories of individual edge modes are evaluated in a quantum Hall system with high Chern number. Edge states from the lowest Landau level have similar eigenfunctions which are well localized at the system edge and independent of the Fermi energy. On the other hand, at fixed Fermi energy, the edge state from higher Landau levels has larger expansion, which leads to less stable quantum Hall states at high Fermi energies. By presenting the local current density distribution, the influence of disorder on eigenmode-resolved edge states is vividly demonstrated.
Coupled quantum Hall edge channels show intriguing non-trivial modes, for example, charge and neutral modes at Landau level filling factors 2 and 2/3. We propose an appropriate and effective model with Coulomb interaction and disorder-induced tunneling characterized by coupling capacitances and tunneling conductances, respectively. This model explains how the transport eigenmodes, within the interaction- and disorder-dominated regimes, change with the coupling capacitance, tunneling conductance, and measurement frequency. We propose frequency- and time-domain transport experiments, from which eigenmodes can be determined using this model.
We study the low energy edge states of bilayer graphene in a strong perpendicular magnetic field. Several possible simple boundaries geometries related to zigzag edges are considered. Tight-binding calculations reveal three types of edge state behaviors: weakly, strongly, and non-dispersive edge states. These three behaviors may all be understood within a continuum model, and related by non-linear transformations to the spectra of quantum Hall edge--states in a conventional two-dimensional electron system. In all cases, the edge states closest to zero energy include a hole-like edge state of one valley and a particle-like state of the other on the same edge, which may or may not cross depending on the boundary condition. Edge states with the same spin generically have anticrossings that complicate the spectra, but which may be understood within degenerate perturbation theory. The results demonstrate that the number of edge states crossing the Fermi level in clean, undoped bilayer graphene depends BOTH on boundary conditions and the energies of the bulk states.
We report quantitative measurements of the impact of alloy disorder on the $ u=5/2$ fractional quantum Hall state. Alloy disorder is controlled by the aluminum content $x$ in the Al$_x$Ga$_{1-x}$As channel of a quantum well. We find that the $ u=5/2$ state is suppressed with alloy scattering. To our surprise, in samples with alloy disorder the $ u=5/2$ state appears at significantly reduced mobilities when compared to samples in which alloy disorder is not the dominant scattering mechanism. Our results highlight the distinct roles of the different types of disorder present in these samples, such as the short-range alloy and the long-range Coulomb disorder.
We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states.
We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically-doped Bi$_2$Se$_3$-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calculations. In contrast to the familiar case of the quantum Hall effect in semiconductor quantum wells, the number of microscopic chiral channels depends simply and systematically on the ribbon thickness and on the position of the Fermi level within the surface state gap. We use our theory to interpret recent transport experiments that exhibit non-zero longitudinal resistance in samples with accurately quantized Hall conductances.