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Register a new userGeneration of energy selective excitations in quantum Hall edge states
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We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states.
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A theoretical study of the single electron coherence properties of Lorentzian and rectangular pulses is presented. By combining bosonization and the Floquet scattering approach, the effect of interactions on a periodic source of voltage pulses is computed exactly. When such excitations are injected into one of the channels of a system of two copropagating quantum Hall edge channels, they fractionalize into pulses whose charge and shape reflects the properties of interactions. We show that the dependence of fractionalization induced electron/hole pair production in the pulses amplitude contains clear signatures of the fractionalization of the individual excitations. We propose an experimental setup combining a source of Lorentzian pulses and an Hanbury Brown and Twiss interferometer to measure interaction induced electron/hole pair production and more generally to reconstruct single electron coherence of these excitations before and after their fractionalization.
We have investigated microwave transmission through the edge of quantum Hall systems by employing a coplanar waveguide (CPW) fabricated on the surface of a GaAs/AlGaAs two-dimensional electron gas (2DEG) wafer. An edge is introduced to the slot region of the CPW by applying a negative bias $V_mathrm{g}$ to the central electrode (CE) and depleting the 2DEG below the CE. We observe peaks attributable to the excitation of edge magnetoplasmons (EMP) at a fundamental frequency $f_0$ and at its harmonics $i f_0$ ($i$ = 2, 3,...). The frequency $f_0$ increases with decreasing $V_mathrm{g}$, indicating that EMP propagates with higher velocity for more negative $V_mathrm{g}$. The dependence of $f_0$ on $V_mathrm{g}$ is interpreted in terms of the variation in the distance between the edge state and the CE, which alters the velocity by varying the capacitive coupling between them. The peaks are observed to continue, albeit with less clarity, up to the regions of $V_mathrm{g}$ where 2DEG still remains below the CE.
We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically-doped Bi$_2$Se$_3$-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calculations. In contrast to the familiar case of the quantum Hall effect in semiconductor quantum wells, the number of microscopic chiral channels depends simply and systematically on the ribbon thickness and on the position of the Fermi level within the surface state gap. We use our theory to interpret recent transport experiments that exhibit non-zero longitudinal resistance in samples with accurately quantized Hall conductances.
We study the low energy edge states of bilayer graphene in a strong perpendicular magnetic field. Several possible simple boundaries geometries related to zigzag edges are considered. Tight-binding calculations reveal three types of edge state behaviors: weakly, strongly, and non-dispersive edge states. These three behaviors may all be understood within a continuum model, and related by non-linear transformations to the spectra of quantum Hall edge--states in a conventional two-dimensional electron system. In all cases, the edge states closest to zero energy include a hole-like edge state of one valley and a particle-like state of the other on the same edge, which may or may not cross depending on the boundary condition. Edge states with the same spin generically have anticrossings that complicate the spectra, but which may be understood within degenerate perturbation theory. The results demonstrate that the number of edge states crossing the Fermi level in clean, undoped bilayer graphene depends BOTH on boundary conditions and the energies of the bulk states.
Indium Arsenide (InAs) near surface quantum wells (QWs) are ideal for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance. We analyze the experimental data using the Landauer-B{u}ttiker formalism, generalized to allow for Andreev reflection processes. Our analysis is consistent with a lower-bound for the averaged Andreev conversion of about 15%. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.
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