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Register a new userSuperconductivity at 38 K in an electrochemical interface between ionic liquid and Fe(Se0.8Te0.2) on various substrates
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Superconducting FeSe0.8Te0.2 thin films on SrTiO3, LaAlO3 and CaF2 substrates were electrochemically etched in an ionic liquid DEME-TFSI electrolyte with a gate bias of 5 V. Superconductivity at 38 K was commonly observed on all substrates after etching the films with a thickness above 30 nm, in spite of different Tc of 8 K, 12 K and 19 K before the etching on SrTiO3, LaAlO3 and CaF2 substrates, respectively. Tc returned to the original value by removing the gate bias. The Tc enhancement on the thick film indicates no relationship between the Tc enhancement and any interface effects between the film and the substrate. The sheet resistance and the Hall coefficient of the surface conducting layer were estimated from the gate bias dependence of the transport properties. The sheet resistance of the surface conducting layer of the films on LaAlO3 and CaF2 showed an identical temperature dependence, and the Hall coefficient is almost temperature independent and -0.05 to -0.2 m2/C, corresponding to 4-17 electrons per one FeSe0.8Te0.2 unit cell area in two dimension. These common transport properties on various substrates suggest that the superconductivity at 38 K appeared in the surface conducting layer produced by electrochemical reaction between the surface of the FeSe0.8Te0.2 thin film and the ionic liquid electrolyte.
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Superconductivity in FeTe0.8S0.2 is successfully induced by an electrochemical reaction using an ionic liquid solution. A clear correlation between the Fe concentration in the solution and the manifestation of superconductivity was confirmed, suggesting that superconductivity was induced by the deintercalation of excess iron.
We report here that a new superconducting phase with much higher Tc has been found in K intercalated FeSe compound with excess Fe. We successfully grew crystals by precisely controlling the starting amount of Fe. Besides the superconducting (SC) transition at ~30 K, we observed a sharp drop in resistivity and a kink in susceptibility at 44 K. By combining thermodynamic measurements with electron spin resonance (ESR), we demonstrate that this is a new SC transition. Structural analysis unambiguously reveals two phases coexisting in the crystals, which are responsible respectively for the SC transitions at 30 and 44 K. The structural experiments and first-principles calculations consistently indicate that the 44 K SC phase is close to a 122 structure, but with an unexpectedly large c-axis of 18.10 {AA}. We further find a novel monotonic dependence of the maximum Tc on the separation of neighbouring FeSe layers.
Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a trial-and-error method that is difficult to implement and time consuming. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr_2CuO_{4pmdelta} film, based on two distinct mechanisms: 1) with positive electric fields, the film can be reversibly switched between non-superconducting and superconducting states, attributed to the carrier doping effect. 2) The film becomes more resistive by applying negative bias voltage up to -4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such a persistent superconducting state represents a novel phenomenon in copper oxides, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unraveled by high-resolution scanning transmission electron microscope and in-situ x-ray diffraction experiments. The effective manipulation and mastering of volatile/non-volatile superconductivity in the same parent cuprate opens the door to more functionalities for superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T_c superconductors.
At interfaces between complex oxides it is possible to generate electronic systems with unusual electronic properties, which are not present in the isolated oxides. One important example is the appearance of superconductivity at the interface between insulating oxides, although, until now, with very low Tc. We report the occurrence of high Tc superconductivity in the bilayer CaCuO2/SrTiO3, where both the constituent oxides are insulating. In order to obtain a superconducting state, the CaCuO2/SrTiO3 interface must be realized between the Ca plane of CaCuO2 and the TiO2 plane of SrTiO3. Only in this case extra oxygen ions can be incorporated in the interface Ca plane, acting as apical oxygen for Cu and providing holes to the CuO2 planes. A detailed hole doping spatial profile has been obtained by STEM/EELS at the O K-edge, clearly showing that the (super)conductivity is confined to about 1-2 CaCuO2 unit cells close to the interface with SrTiO3. The results obtained for the CaCuO2/SrTiO3 interface can be extended to multilayered high Tc cuprates, contributing to explain the dependence of Tc on the number of CuO2 planes in these systems.
We report protonation in several compounds by an ionic-liquid-gating method, with optimized gating conditions. This leads to single superconducting phases for several compounds. Non-volatility of protons allow post-gating magnetization and transport measurements. The superconducting transition temperature $T_C$ is enhanced to 43.5~K for FeSe$_{0.93}$S$_{0.07}$, and 41~K for FeSe after protonation. Superconductivity with $T_c$$approx$15~K for ZrNCl, $approx$7.2~K for 1$T$-TaS$_2$, and $approx$3.8~K for Bi$_2$Se$_3$ are induced after protonation. Electric transport in protonated FeSe$_{0.93}$S$_{0.07}$ confirms high-temperature superconductivity. Our $^{1}$H NMR measurements on protonated FeSe$_{1-x}$S$_{x}$ reveal enhanced spin-lattice relaxation rate $1/^{1}T_1$ with increasing $x$, which is consistent with LDA calculations that H$^{+}$ are located in the interstitial sites close to the anions.
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