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Register a new userInsight into the origin of Lithium/Nickel ions exchange in layered Li(NixMnyCoz)O2 cathode materials
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In layered LiNixMnyCozO2 cathode material for lithium-ion batteries, the spins of transition metal (TM) ions construct a two-dimensional triangular networks, which can be considered as a simple case of geometrical frustration. By performing neutron powder diffraction experiments and magnetization measurements, we find that long-range magnetic order cannot be established in LiNixMnyCozO2 even at low temperature of 3 K. Remarkably, the frustration parameters of these compounds are estimated to be larger than 30, indicating the existence of strongly frustrated magnetic interactions between spins of TM ions. As frustration will inevitably give rise to lattice instability, the formation of Li/Ni exchange in LiNixMnyCozO2 will help to partially relieve the degeneracy of the frustrated magnetic lattice by forming a stable antiferromagnetic state in hexagonal sublattice with nonmagnetic ions located in centers of the hexagons. Moreover, Li/Ni exchange will introduce 180{deg} superexchange interaction, which further relieves the magnetic frustration through bringing in new exchange paths. Thus, the variation of Li/Ni exchange ratio vs. TM mole fraction in LiNixMnyCozO2 with different compositions can be well understood and predicted in terms of magnetic frustration and superexchange interactions. This provides a unique viewpoint to study the Li/Ni ions exchange in layered Li(NixMnyCoz)O2 cathode materials.
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Defects and their interactions in crystalline solids often underpin material properties and functionality as they are decisive for stability, result in enhanced diffusion, and act as a reservoir of vacancies. Recently, lithium-rich layered oxides have emerged among the leading candidates for the next-generation energy storage cathode material, delivering 50 % excess capacity over commercially used compounds. Oxygen-redox reactions are believed to be responsible for the excess capacity, however, voltage fading has prevented commercialization of these new materials. Despite extensive research the understanding of the mechanisms underpinning oxygen-redox reactions and voltage fade remain incomplete. Here, using operando three-dimensional Bragg coherent diffractive imaging, we directly observe nucleation of a mobile dislocation network in nanoparticles of lithium-rich layered oxide material. Surprisingly, we find that dislocations form more readily in the lithium-rich layered oxide material as compared with a conventional layered oxide material, suggesting a link between the defects and the anomalously high capacity in lithium-rich layered oxides. The formation of a network of partial dislocations dramatically alters the local lithium environment and contributes to the voltage fade. Based on our findings we design and demonstrate a method to recover the original high voltage functionality. Our findings reveal that the voltage fade in lithium-rich layered oxides is reversible and call for new paradigms for improved design of oxygen-redox active materials.
By using first-principles calculation, the interaction of O2 and H2O molecules with the pristine and the defective InSe monolayers is studied. It is predicted that the single Se and In vacancies exhibit significantly enhanced chemical activity toward the adsorbates compared with the perfect InSe lattice site, and the Se vacancies have a much higher chemical activity than the In vacancies. H2O molecule should be only physisorbed on the various InSe monolayers at ambient conditions, according to the calculated energies. The doping of the various InSe monolayers is discussed by the physisorbed H2O. The vacancies show a much higher chemical activity toward O2 than H2O. Although O2 molecules are still physisorbed on the pristine InSe monolayer, they will be chemisorbed on the defective InSe monolayers. Especially, our calculated energies suggest that the surface oxidation of the 2D InSe semiconductor should be dominated by the defects that expose under-coordinated host atoms, especially In atoms. Our theoretical results can help better understanding the doping and the oxidation of the 2D InSe semiconductor under ambient conditions.
We have studied low-temperature magnetic properties as well as high-temperature lithium ion diffusion in the battery cathode materials LixNi1/3Co1/3Mn1/3O2 by the use of muon spin rotation/relaxation. Our data reveal that the samples enter into a 2D spin-glass state below TSG=12 K. We further show that lithium diffusion channels become active for T>Tdiff=125 K where the Li-ion hopping-rate [nu(T)] starts to increase exponentially. Further, nu(T) is found to fit very well to an Arrhenius type equation and the activation energy for the diffusion process is extracted as Ea=100 meV.
Oxygen is widely used to tune the performance of chalcogenide phase-change materials in the usage of phase-Change random access memory (PCRAM) which is considered as the most promising next-generation non-volatile memory. However, the microscopic role of oxygen in the write-erase process, i.e., the reversible phase transition between crystalline and amorphous state of phase-change materials is not clear yet. Using oxygen doped GeTe as an example, this work unravels the role of oxygen at the atomic scale by means of ab initio total energy calculations and ab initio molecular dynamics simulations. Our main finding is that after the amorphization and the subsequent re-crystallization process simulated by ab initio molecular dynamics, oxygen will drag one Ge atom out of its lattice site and both atoms stay in the interstitial region near the Te vacancy that was originally occupied by the oxygen, forming a dumbbell-like defect (O-VTe-Ge), which is in sharp contrast to the results of ab initio total energy calculations at 0 K showing that the oxygen prefers to substitute Te in crystalline GeTe. This specific defect configuration is found to be responsible for the slower crystallization speed and hence the improved data retention of oxygen doped GeTe as reported in recent experimental work. Moreover, we find that the oxygen will increase the effective mass of the carrier and thus increases the resistivity of GeTe. Our results unravel the microscopic mechanism of the oxygen-doping optimization of phase-change material GeTe, and the present reported mechanism can be applied to other oxygen doped ternary chalcogenide phase-change materials.
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