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Register a new userInsight into the Role of Oxygen in Phase-Change Material GeTe
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Oxygen is widely used to tune the performance of chalcogenide phase-change materials in the usage of phase-Change random access memory (PCRAM) which is considered as the most promising next-generation non-volatile memory. However, the microscopic role of oxygen in the write-erase process, i.e., the reversible phase transition between crystalline and amorphous state of phase-change materials is not clear yet. Using oxygen doped GeTe as an example, this work unravels the role of oxygen at the atomic scale by means of ab initio total energy calculations and ab initio molecular dynamics simulations. Our main finding is that after the amorphization and the subsequent re-crystallization process simulated by ab initio molecular dynamics, oxygen will drag one Ge atom out of its lattice site and both atoms stay in the interstitial region near the Te vacancy that was originally occupied by the oxygen, forming a dumbbell-like defect (O-VTe-Ge), which is in sharp contrast to the results of ab initio total energy calculations at 0 K showing that the oxygen prefers to substitute Te in crystalline GeTe. This specific defect configuration is found to be responsible for the slower crystallization speed and hence the improved data retention of oxygen doped GeTe as reported in recent experimental work. Moreover, we find that the oxygen will increase the effective mass of the carrier and thus increases the resistivity of GeTe. Our results unravel the microscopic mechanism of the oxygen-doping optimization of phase-change material GeTe, and the present reported mechanism can be applied to other oxygen doped ternary chalcogenide phase-change materials.
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Ionic liquid gating can markedly modulate the materials carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in ionic liquid gating effect is still unclear. Here, we perform the ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr2Ge2Te6. Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect (< 5 % difference), which suggests the electrostatic field effect as the mechanism on non-oxide materials. Moreover, our results show that the ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO2.
Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests, but also make PCMs based random access memory (PRAM) a leading candidate for non-volatile memory and neuromorphic computing devices. To RESET the memory cell, crystalline Ge-Sb-Te has to undergo phase transitions firstly to a liquid state and then to an amorphous state, corresponding to an abrupt change in electrical resistance. In this work, we demonstrate a progressive amorphization process in GeSb2Te4 thin films under electron beam irradiation on transmission electron microscope (TEM). Melting is shown to be completely absent by the in situ TEM experiments. The progressive amorphization process resembles closely the cumulative crystallization process that accompanies a continuous change in electrical resistance. Our work suggests that if displacement forces can be implemented properly, it should be possible to emulate symmetric neuronal dynamics by using PCMs.
Understanding the appearance of commensurate and incommensurate modulations in perovskite antiferroelectrics (AFEs) is of great importance for material design and engineering. The dielectric and elastic properties of the AFE domain boundaries are lack of investigation. In this work, a novel Landau theory is proposed to understand the transformation of AFE commensurate and incommensurate phases, by considering the coupling between the oxygen octahedral tilt mode and the polar mode. The derived relationship between the modulation periodicity and temperature is in good agreement with the experimental results. Using the phase field study, we show that the polarization is suppressed at the AFE domain boundaries, contributing to a remnant polarization and local elastic stress field in AFE incommensurate phases.
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