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Register a new userVoltage-induced thin-film superconductivity in high magnetic fields
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We predict that superconductivity in thin films can be stabilized in high magnetic fields if the superconductor is driven out of equilibrium by a DC voltage bias. For realistic material parameters and temperatures, we show that superconductivity is restored in fields many times larger than the Chandrasekhar-Clogston limit. After motivating the effect analytically, we perform rigorous numerical calculations to corroborate the findings, and present concrete experimental signatures. On the technical side, we also introduce a new form for the nonequilibrium kinetic equations, which generalizes and simplifies previous formulations of the problem.
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We study a tunnel junction consisting of two thin-film s-wave superconductors separated by a thin, insulating barrier in the presence of misaligned in-plane exchange fields. We find an interesting interplay between the superconducting phase difference and the relative orientation of the exchange fields, manifested in the Josephson current across the junction. Specifically, this may be written $I_text{J}^text{C} = (I_0+I_m ~ cosphi) sinDeltatheta$, where I_0 and I_m are constants, and $phi$ is the relative orientation of the exchange fields while $Deltatheta$ is the superconducting phase difference. Similar results have recently been obtained in other S/I/S junctions coexisting with helimagnetic or ferromagnetic order. We calculate the superconducting order parameter self-consistently, and investigate quantitatively the effect which the misaligned exchange fields constitute on the Josephson current, to see if I_m may have an appreciable effect on the Josephson current. It is found that I_0 and I_m become comparable in magnitude at sufficiently low temperatures and fields close to the critical value, in agreement with previous work. From our analytical results, it then follows that the Josephson current in the present system may be controlled in a well-defined manner by a rotation of the exchange fields on both sides of the junction. We discuss a possible experimental realization of this proposition.
Three-dimensional topological insulators (TIs) attract much attention due to its topologically protected Dirac surface states. Doping into TIs or their proximity with normal superconductors can promote the realization of topological superconductivity(SC) and Majorana fermions with potential applications in quantum computations. Here, an emergent superconductivity was observed in local mesoscopic point-contacts on the topological insulator Bi2Se3 by applying a voltage pulse through the contacts, evidenced by the Andreev reflection peak in the point-contact spectra and a visible resistance drop in the four-probe electrical resistance measurements. More intriguingly, the superconductivity can be erased with thermal cycles by warming up to high temperatures (300 K) and induced again by the voltage pulse at the base temperature (1.9 K), suggesting a significance for designing new types of quantum devices. Nematic behaviour is also observed in the superconducting state, similar to the case of CuxBi2Se3 as topological superconductor candidates.
Motivated by the success of experimental manipulation of the band structure through biaxial strain in Sr$_2$RuO$_4$ thin film grown on a mismatched substrate, we investigate theoretically the effects of biaxial strain on the electronic instabilities, such as superconductivity (SC) and spin density wave (SDW), by functional renormalization group. According to the experiment, the positive strain (from lattice expansion) causes charge transfer to the $gamma$-band and consequently Lifshitz reconstruction of the Fermi surface. Our theoretical calculations show that within a limited range of positive strain a p-wave superconducting order is realized. However, as the strain is increased further the system develops into the SDW state well before the Lifshitz transition is reached. We also consider the effect of negative strains (from lattice constriction). As the strain increases, there is a transition from p-wave SC state to nodal s-wave SC state. The theoretical results are discussed in comparison to experiment and can be checked by further experiments.
A vortex crossing a thin-film superconducting strip from one edge to the other, perpendicular to the bias current, is the dominant mechanism of dissipation for films of thickness d on the order of the coherence length XI; and of width w much narrower than the Pearl length LAMBDA >> w >> XI. At high bias currents, I* < I < Ic, the heat released by the crossing of a single vortex suffices to create a belt-like normal-state region across the strip, resulting in a detectable voltage pulse. Here Ic is the critical current at which the energy barrier vanishes for a single vortex crossing. The belt forms along the vortex path and causes a transition of the entire strip into the normal state. We estimate I* to be roughly Ic/3. Further, we argue that such hot vortex crossings are the origin of dark counts in photon detectors, which operate in the regime of metastable superconductivity at currents between I* and Ic. We estimate the rate of vortex crossings and compare it with recent experimental data for dark counts. For currents below I*, i.e., in the stable superconducting but resistive regime, we estimate the amplitude and duration of voltage pulses induced by a single vortex crossing.
We report the high-field superconducting properties of thin, disordered Re films via magneto-transport and tunneling density of states measurements. Films with thicknesses in the range of 9 nm to 3 nm had normal state sheet resistances of $sim$0.2 k$Omega$ to $sim$1 k$Omega$ and corresponding transition temperatures in the range of 6 K to 3 K. Tunneling spectra were consistent with those of a moderate coupling BCS superconductor. Notwithstanding these unremarkable superconducting properties, the films exhibited an extraordinarily high upper critical field. We estimate their zero-temperature $H_{c2}$ to be more than twice the Pauli limit. Indeed, in 6 nm samples the estimated reduced critical field $H_{c2}/T_csim$ 5.6 T/K is among the highest reported for any elemental superconductor. Although the sheet resistances of the films were well below the quantum resistance $R_Q=h/4e^2$, their $H_{c2}$s approached the theoretical upper limit of a strongly disordered superconductor for which $k_Fellsim1$.
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