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Register a new userSpin-polaron ladder spectrum of the spin-orbit-induced Mott insulator Sr$_2$IrO$_{4}$ probed by scanning tunneling spectroscopy
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Jose Maria Guevara Parra
Publication date
2018
fields
Physics
and research's language is
English
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The motion of doped electrons or holes in an antiferromagnetic lattice with strong on-site Coulomb interactions touches one of the most fundamental open problems in contemporary condensed matter physics. The doped charge may strongly couple to elementary spin excitations resulting in a dressed quasiparticle which is subject to confinement. This spin-polaron possesses internal degrees of freedom with a characteristic ladder excitation spectrum. Despite its fundamental importance for understanding high-temperature superconductivity, clear experimental spectroscopic signatures of these internal degrees of freedom are scarce. Here we present scanning tunneling spectroscopy results of the spin-orbit-induced Mott insulator Sr$_2$IrO$_{4}$. Our spectroscopy data reveal distinct shoulder-like features for occupied and unoccupied states beyond a measured Mott gap of $Deltaapprox620$~meV. Using the self-consistent Born approximation we assign the anomalies in the unoccupied states to the spin-polaronic ladder spectrum with excellent quantitative agreement and estimate the Coulomb repulsion $U$ = 2.05 ...2.28 eV in this material. These results confirm the strongly correlated electronic structure of this compound and underpin the previously conjectured paradigm of emergent unconventional superconductivity in doped Sr$_2$IrO$_{4}$.
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We present scanning tunneling microscopy and spectroscopy experiments on the novel J_eff = 1/2 Mott insulator Sr2IrO4. Local density of states (LDOS) measurements show an intrinsic insulating gap of 620 meV that is asymmetric about the Fermi level and is larger than previously reported values. The size of this gap suggests that Sr2IrO4 is likely a Mott rather than Slater insulator. In addition, we found a small number of native defects which create in-gap spectral weight. Atomically resolved LDOS measurements on and off the defects shows that this energy gap is quite fragile. Together the extended nature of the 5d electrons and poor screening of defects help explain the elusive nature of this gap.
In the context of correlated insulators, where electron-electron interactions (U) drive the localization of charge carriers, the metal-insulator transition (MIT) is described as either bandwidth (BC) or filling (FC) controlled. Motivated by the challenge of the insulating phase in Sr$_2$IrO$_4$, a new class of correlated insulators has been proposed, in which spin-orbit coupling (SOC) is believed to renormalize the bandwidth of the half-filled $j_{mathrm{eff}} = 1/2$ doublet, allowing a modest U to induce a charge-localized phase. Although this framework has been tacitly assumed, a thorough characterization of the ground state has been elusive. Furthermore, direct evidence for the role of SOC in stabilizing the insulating state has not been established, since previous attempts at revealing the role of SOC have been hindered by concurrently occurring changes to the filling. We overcome this challenge by employing multiple substituents that introduce well defined changes to the signatures of SOC and carrier concentration in the electronic structure, as well as a new methodology that allows us to monitor SOC directly. Specifically, we study Sr$_2$Ir$_{1-x}$T$_x$O$_4$ (T = Ru, Rh) by angle-resolved photoemission spectroscopy (ARPES), combined with ab-initio and supercell tight-binding calculations. This allows us to distinguish relativistic and filling effects, thereby establishing conclusively the central role of SOC in stabilizing the insulating state of Sr$_2$IrO$_4$. Most importantly, we estimate the critical value for spin-orbit coupling in this system to be $lambda_c = 0.42 pm 0.01$ eV, and provide the first demonstration of a spin-orbit-controlled MIT.
We report a high-field electron spin resonance study in the sub-THz frequency domain of a single crystal of Sr$_2$IrO$_4$ that has been recently proposed as a prototypical spin-orbital Mott insulator. In the antiferromagnetically (AFM) ordered state with noncollinear spin structure that occurs in this material at $T_{rm N} approx 240$ K we observe both the low frequency mode due to the precession of weak ferromagnetic moments arising from a spin canting, and the high frequency modes due to the precession of the AFM sublattices. Surprisingly, the energy gap for the AFM excitations appears to be very small, amounting to 0.83 meV only. This suggests a rather isotropic Heisenberg dynamics of interacting Ir$^{4+}$ effective spins despite the spin-orbital entanglement in the ground state.
X-ray magnetic critical scattering measurements and specific heat measurements were performed on the perovskite iridate Sr$_3$Ir$_2$O$_7$. We find that the magnetic interactions close to the N{e}el temperature $T_N$ = 283.4(2) K are three-dimensional. This contrasts with previous studies which suggest two-dimensional behaviour like Sr$_2$IrO$_4$. Violation of the Harris criterion ($d u>2$) means that weak disorder becomes relevant. This leads a rounding of the antiferromagnetic phase transition at $T_N$, and modifies the critical exponents relative to the clean system. Specifically, we determine that the critical behaviour of Sr$_3$Ir$_2$O$_7$ is representative of the diluted 3D Ising universality class.
Despite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping induced insulator to metal transition is still a subject under intensive investigation. Here we probe the nanoscale electronic structure of the Mott insulator Sr$_2$IrO$_{4-delta}$ with low-temperature scanning tunneling microscopy and find enhanced local density of states (LDOS) inside the Mott gap at the location of individual apical oxygen site defects. We visualize paths of enhanced conductance arising from the overlapping of defect states which induces finite LDOS at the Fermi level. By combining these findings with the typical spatial extension of isolated defects of about 2~nm, we show that the insulator to metal transition in Sr$_2$IrO$_{4-delta}$ is of percolative nature.
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