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Register a new userBoltzmann scaling of spontaneous Hall current and nonequilibrium spin-polarization
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We extend the semiclassical Boltzmann formalism for the anomalous Hall effect (AHE) in nondegenerate multiband electron systems to the spin Hall effect (SHE) and unconventional Edelstein effect (UEE, cannot be accounted for by the conventional Boltzmann equation, unlike the conventional Edelstein effect). This extension is confirmed by extending the Kohn-Luttinger density-matrix transport theory in the weak disorder-potential regime. By performing Kubo linear response calculations in a prototypical multiband model, the Boltzmann scaling for the AHE/SHE and UEE is found to be valid only if the disorder-broadening of bands is quite smaller than the minimal intrinsic energy-scale around the Fermi level. Discussions on this criterion in various multiband systems are also presented. A qualitative phase diagram is proposed to show the influences of changing independently the impurity density and strength of disorder potential on the AHE/SHE and UEE.
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We theoretically examine the spin-transfer torque in the presence of spin-orbit interaction (SOI) at impurities in a ferromagnetic metal on the basis of linear response theory. We obtained, in addition to the usual spin-transfer torque, a new contributioin $sim {bm j}_{rm SH}^{phantom{dagger}} cdot abla {bm n}$ in the first order in SOI, where ${bm j}_{rm SH}^{phantom{dagger}}$ is the spin Hall current driven by an external electric field. This is a reaction to inverse spin Hall effect driven by spin motive force in a ferromagnet.
Hall effects have been employed as sensitive detectors of magnetic fields and magnetizations. In spintronics, exotic phenomena often emerge from a non-equilibrium spin polarization or magnetization, that is very difficult to measure directly. The challenge is due to the tiny total moment, which is out of reach of superconducting quantum interference devices and vibrating sample magnetometers or spectroscopic methods such as X-ray magnetic circular dichroism. The Kerr effect is sufficiently sensitive only in direct gap semiconductors, in which the Kerr angle can be resonantly enhanced. Here we demonstrate that even one excess spin in a million can be detected by a Hall effect at room temperature. The novel Hall effect is not governed by the spin Hall conductivity but by its energy derivative thereby related to the spin Nernst effect.
In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is achieved by each individual mechanism. The pure spin injection is capable of inducing oscillations in the absence of charge currents effectively reducing the critical tunneling current to zero. This reduction of the critical charge currents can improve the endurance of both STNOs and non-volatile magnetic memories (MRAM) devices. It is shown that the system response can be described in terms of an injected spin current density $J_s$ which results from the contribution of both spin injection mechanisms, with the tunneling current polarization $p$ and the spin Hall angle $theta$ acting as key parameters determining the efficiency of each injection mechanism. The experimental data exhibits an excellent agreement with this model which can be used to quantitatively predict the critical points ($J_s = -2.26pm 0.09 times 10^9 hbar/e$ A/m$^2$) and the oscillation amplitude as a function of the input currents. In addition, the fitting of the data also allows an independent confirmation of the values estimated for the spin Hall angle and tunneling current polarization as well as the extraction of the damping $alpha = 0.01$ and non-linear damping $Q = 3.8pm 0.3$ parameters.
We perform electronic measurements of unidirectional spin Hall magnetoresistance (USMR) in a Permalloy/Pt bilayer, in conjunction with magneto-optical Brillouin light spectroscopy of spin current-driven magnon population. We show that the current dependence of USMR closely follows the dipolar magnon density, and that both dependencies exhibit the same scaling over a large temperature range of 80-400 K. These findings demonstrate a close relationship between spin current-driven magnon generation and USMR, and indicate that the latter is likely dominated by the dipolar magnons.
Density-functional calculations using an exact exchange potential for a two-dimensional electron gas (2DEG) formed in a GaAs single quantum well predict the existence of a spin-polarized phase, when an excited subband becomes slightly populated. Direct experimental evidence is obtained from low temperature and low excitation-power photoluminescence (PL) spectra which display the sudden appearance of a sharp emission peak below the energy of the optical transition from the first excited electron subband upon its occupation. The behavior of this PL feature in magnetic fields applied in-plane as well as perpendicular to the 2DEG indicate the formation of spin-polarized domains in the excited subband with in-plane magnetization. For it speaks also the strong enhancement of exchange-vertex corrections observed in inelastic light scattering spectra by spin-density excitations of a slightly occupied first-excited subband.
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