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Relation between unidirectional spin Hall magnetoresistance and spin current-driven magnon generation

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 Added by Vladislav Demidov
 Publication date 2018
  fields Physics
and research's language is English




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We perform electronic measurements of unidirectional spin Hall magnetoresistance (USMR) in a Permalloy/Pt bilayer, in conjunction with magneto-optical Brillouin light spectroscopy of spin current-driven magnon population. We show that the current dependence of USMR closely follows the dipolar magnon density, and that both dependencies exhibit the same scaling over a large temperature range of 80-400 K. These findings demonstrate a close relationship between spin current-driven magnon generation and USMR, and indicate that the latter is likely dominated by the dipolar magnons.



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87 - Yang Lv , James Kally , Tao Liu 2018
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metallic layer and low Curie temperature, respectively. Here, we report large USRMR in a new material category - magnetic insulator/topological insulator bi-layered heterostructures. Such structures exhibit USRMR that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. We also demonstrate current-induced magnetization switching aided by an Oersted field, and electrical read out by the USRMR, as a prototype memory device.
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