Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userThermoelectric properties of polycrystalline palladium sulfide
182
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
A suite measurements of the electrical, thermal, and vibrational properties are conducted on palladium sulfide (PdS) in order to investigate its thermoelectric performance. The tetragonal structure with the space group $P$42/$m$ for PdS is determined from X-ray diffraction measurement. The unique temperature dependence of mobility suggests that acoustic phonons and ion impurity scattering are two dominant scattering mechanisms within the compound. The obtained power factor of $27$ $mu$Wcm$^{-1}$K$^{-2}$ at 800 K is the largest value in the remaining transition-metal sulfides studied so far. The maximum value of the dimensionless figure of merit is 0.33 at 800 K. The observed phonon softening with temperature indicates that the reduction of the lattice thermal conductivity is mainly controlled by the enhanced lattice anharmonicity. These results indicate that the binary bulk PdS has promising potential to have good thermoelectrical performance.
rate research
Read More
An extended study on PdS is carried out with the measurements of the resistivity, Hall coefficient, Raman scattering, and X-ray diffraction at high pressures up to 42.3 GPa. With increasing pressure, superconductivity is observed accompanying with a structural phase transition at around 19.5 GPa. The coexistence of semiconducting and metallic phases observed at normal state is examined by the Raman scattering and X-ray diffraction between 19.5 and 29.5 GPa. After that, only the metallic normal state maintains with an almost constant superconducting transition temperature. The similar evolution between the superconducting transition temperature and carrier concentration with pressure supports the phonon-mediated superconductivity in this material. These results highlight the important role of pressure played in inducing superconductivity from these narrow band-gap semiconductors.
Transition metal oxide thin films show versatile electrical, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the modification of the magnetic and thermal transport properties by fabricating single- and polycrystalline epitaxial SrRuO3 thin films using pulsed laser epitaxy. Using epitaxial stabilization technique with atomically flat polycrystalline SrTiO3 substrate, epitaxial polycrystalline SrRuO3 thin film with crystalline quality of each grain comparable to that of single-crystalline counterpart is realized. In particular, alleviated compressive strain near the grain boundaries due to coalescence is evidenced structurally, which induced enhancement of ferromagnetic ordering of the polycrystalline epitaxial thin film. The structural variations associated with the grain boundaries further reduce the thermal conductivity without deteriorating the electronic transport, and lead to enhanced thermoelectric efficiency in the epitaxial polycrystalline thin films, compared with their single-crystalline counterpart.
We present an investigation of the thermoelectric properties of cubic perovskite SrTiO3. The results are derived from a combination of calculated transport functions obtained from Boltzmann transport theory in the constant scattering time approximation based on the electronic structure and existing experimental data for La-doped SrTiO3. The figure of merit ZT is modeled with respect to carrier concentration and temperature. The model predicts a relatively high $ZT$ at optimized doping, and suggests that the $ZT$ value can reach 0.7 at T = 1400 K. Thus $ZT$ can be improved from the current experimental values by carrier concentration optimization.
Bismuth oxyselenide (Bi$_2$O$_2$Se) attracts great interest as a potential n-type complement to p-type thermoelectric oxides in practical applications. Previous investigations were generally focused on polycrystals. Here, we performed a study on the thermoelectric properties of Bi$_2$O$_2$Se single crystals. Our samples exhibit electron mobility as high as 250 cm$^2.$V$^{-1}$.s$^{-1}$ and thermal conductivity as low as $2$ W.m$^{-1}$.K$^{-1}$ near room temperature. The maximized figure of merit is yielded to be 0.188 at 390 K, higher than that of polycrystals. Consequently, a rough estimation of the phonon mean free path ($ell_textrm{ph}$) from the kinetic model amounts to 12 $r{A}$ at 390 K and follows a $T^{-1}$ behavior. An extrapolation of $ell_textrm{ph}$ to higher temperatures indicates that this system approaches the Ioffe-Regel limit at about 1100 K. In light of the phonon dispersions, we argue that the ultralow $ell_textrm{ph}$ is attributed to intense anharmonic phonon-phonon scattering, including Umklapp process and acoustic to optical phonon scattering. Our results suggest that single crystals provide a further improvement of thermoelectric performance of Bi$_2$O$_2$Se.
The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1% Ho increases the maximum ZT to 0.31 at 221 K and the 3% doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
