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Higher-Order Topology in Bismuth

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 Added by Frank Schindler
 Publication date 2018
  fields Physics
and research's language is English




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The mathematical field of topology has become a framework to describe the low-energy electronic structure of crystalline solids. A typical feature of a bulk insulating three-dimensional topological crystal are conducting two-dimensional surface states. This constitutes the topological bulk-boundary correspondence. Here, we establish that the electronic structure of bismuth, an element consistently described as bulk topologically trivial, is in fact topological and follows a generalized bulk-boundary correspondence of higher-order: not the surfaces of the crystal, but its hinges host topologically protected conducting modes. These hinge modes are protected against localization by time-reversal symmetry locally, and globally by the three-fold rotational symmetry and inversion symmetry of the bismuth crystal. We support our claim theoretically and experimentally. Our theoretical analysis is based on symmetry arguments, topological indices, first-principle calculations, and the recently introduced framework of topological quantum chemistry. We provide supporting evidence from two complementary experimental techniques. With scanning-tunneling spectroscopy, we probe the unique signatures of the rotational symmetry of the one-dimensional states located at step edges of the crystal surface. With Josephson interferometry, we demonstrate their universal topological contribution to the electronic transport. Our work establishes bismuth as a higher-order topological insulator.



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Higher order topological insulators (HOTIs) are a new class of topological materials which host protected states at the corners or hinges of a crystal. HOTIs provide an intriguing alternative platform for helical and chiral edge states and Majorana modes, but there are very few known materials in this class. Recent studies have proposed Bi as a potential HOTI, however, its topological classification is not yet well accepted. In this work, we show that the (110) facets of Bi and BiSb alloys can be used to unequivocally establish the topology of these systems. Bi and Bi$_{0.92}$Sb$_{0.08}$ (110) films were grown on silicon substrates using molecular beam epitaxy and studied by scanning tunneling spectroscopy. The surfaces manifest rectangular islands which show localized hinge states on three out of the four edges, consistent with the theory for the HOTI phase. This establishes Bi and Bi$_{0.92}$Sb$_{0.08}$ as HOTIs, and raises questions about the topological classification of the full family of Bi$_{x}$Sb$_{1-x}$ alloys.
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In recent years, transition metal dichalcogenides (TMDs) have garnered great interest as topological materials -- monolayers of centrosymmetric $beta$-phase TMDs have been identified as 2D topological insulators (TIs), and bulk crystals of noncentrosymmetric $gamma$-phase MoTe$_2$ and WTe$_2$ have been identified as type-II Weyl semimetals. However, ARPES and STM probes of these TMDs have revealed huge, arc-like surface states that overwhelm, and are sometimes mistaken for, the much smaller topological surface Fermi arcs of bulk type-II Weyl points. In this letter, we use first-principles calculations and (nested) Wilson loops to analyze the bulk and surface electronic structure of both $beta$- and $gamma$-MoTe$_2$, finding that $beta$-MoTe$_2$ ($gamma$-MoTe$_2$ gapped with symmetry-preserving distortion) is an inversion-symmetry-indicated $mathbb{Z}_{4}$-nontrivial ($noncentrosymmetric, non$-$symmetry$-$indicated$) higher-order TI (HOTI) driven by double band inversion. Both structural phases of MoTe$_2$ exhibit the same surface features as WTe$_2$, revealing that the large Fermi arcs are in fact not topologically trivial, but are rather the characteristic split and gapped fourfold surface states of a HOTI. We also show that, when the effects of SOC are neglected, $beta$-MoTe$_2$ is a nodal-line semimetal with $mathbb{Z}_{2}$-nontrivial monopole nodal lines (MNLSM). This finding confirms that MNLSMs driven by double band inversion are the weak-SOC limit of HOTIs, implying that MNLSMs are higher-order topological $semimetals$ with flat-band-like hinge states, which we find to originate from the corner modes of 2D fragile TIs.
134 - W. Kobayashi , Y. Koizumi , 2012
We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.
Twisted moire superlattices (TMSs) are fascinating materials with exotic physical properties. Despite tremendous studies on electronic, photonic and phononic TMSs, it has never been witnessed that TMSs can exhibit higher-order band topology. Here, we report on the experimental observation of higher-order topological states in acoustic TMSs. By introducing moire twisting in bilayer honeycomb lattices of coupled acoustic resonators, we find a regime with designed interlayer couplings where a sizable band gap with higher-order topology emerges. This higher-order topological phase host unique topological edge and corner states, which can be understood via the Wannier centers of the acoustic Bloch bands below the band gap. We confirm experimentally the higher-order band topology by characterizing the edge and corner states using acoustic pump-probe measurements. With complementary theory and experiments, our study opens a pathway toward band topology in TMSs.
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