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Observation of Higher-Order Topological States in Acoustic Twisted Moire Superlattice

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 Added by Jian-Hua Jiang
 Publication date 2021
  fields Physics
and research's language is English




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Twisted moire superlattices (TMSs) are fascinating materials with exotic physical properties. Despite tremendous studies on electronic, photonic and phononic TMSs, it has never been witnessed that TMSs can exhibit higher-order band topology. Here, we report on the experimental observation of higher-order topological states in acoustic TMSs. By introducing moire twisting in bilayer honeycomb lattices of coupled acoustic resonators, we find a regime with designed interlayer couplings where a sizable band gap with higher-order topology emerges. This higher-order topological phase host unique topological edge and corner states, which can be understood via the Wannier centers of the acoustic Bloch bands below the band gap. We confirm experimentally the higher-order band topology by characterizing the edge and corner states using acoustic pump-probe measurements. With complementary theory and experiments, our study opens a pathway toward band topology in TMSs.

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Higher-order topological insulators are a recently discovered class of materials that can possess zero-dimensional localized states regardless of the dimension of the lattice. Here, we experimentally demonstrate that the topological corner-localized modes of higher-order topological insulators can be symmetry protected bound states in the continuum; these states do not hybridize with the surrounding bulk states of the lattice even in the absence of a bulk bandgap. As such, this class of structures has potential applications in confining and controlling light in systems that do not support a complete photonic bandgap.
We investigate the topological properties of Floquet-engineered twisted bilayer graphene above the magic angle driven by circularly polarized laser pulses. Employing a full Moire-unit-cell tight-binding Hamiltonian based on first-principles electronic structure we show that the band topology in the bilayer, at twisting angles above 1.05$^circ$, essentially corresponds to the one of single-layer graphene. However, the ability to open topologically trivial gaps in this system by a bias voltage between the layers enables the full topological phase diagram to be explored, which is not possible in single-layer graphene. Circularly polarized light induces a transition to a topologically nontrivial Floquet band structure with the Berry curvature of a Chern insulator. Importantly, the twisting allows for tuning electronic energy scales, which implies that the electronic bandwidth can be tailored to match realistic driving frequencies in the ultraviolet or mid-infrared photon-energy regimes. This implies that Moire superlattices are an ideal playground for combining twistronics, Floquet engineering, and strongly interacting regimes out of thermal equilibrium.
Twisted van der Waals materials open up novel avenues to control electronic correlation and topological effects. These systems contain the unprecedented possibility to precisely tune strong correlations, topology, magnetism, nematicity, and superconductivity with an external non-invasive electrostatic doping. By doing so, rich phase diagrams featuring an interplay of different states of correlated quantum matter can be unveiled. The nature of the superconducting order presents a recurring overarching open question in this context. In this work, we quantitatively assess the case of spin-fluctuation-mediated pairing for $Gamma$-valley twisted transition metal dichalcogenide homobilayers. We construct a low-energy honeycomb model on which basis we self-consistently and dynamically calculate a doping dependent phase diagram for the superconducting transition temperature $T_{mathrm{c}}$. A superconducting dome emerges with a maximal $T_{mathrm{c}}approx$ 0.1-1 K depending on twist angle. We qualitatively compare our results with conventional phonon-mediated superconductivity and discern clear fingerprints which are detectable in doping-dependent measurements of the superconducting transition temperature, providing direct access to probing the superconducting pairing mechanism in twisted Van der Waals materials.
The Wigner crystal state, first predicted by Eugene Wigner in 1934, has fascinated condensed matter physicists for nearly 90 years2-14. Studies of two-dimensional (2D) electron gases first revealed signatures of the Wigner crystal in electrical transport measurements at high magnetic fields2-4. More recently optical spectroscopy has provided evidence of generalized Wigner crystal states in transition metal dichalcogenide (TMDC) moire superlattices. Direct observation of the 2D Wigner crystal lattice in real space, however, has remained an outstanding challenge. Scanning tunneling microscopy (STM) in principle has sufficient spatial resolution to image a Wigner crystal, but conventional STM measurements can potentially alter fragile Wigner crystal states in the process of measurement. Here we demonstrate real-space imaging of 2D Wigner crystals in WSe2/WS2 moire heterostructures using a novel non-invasive STM spectroscopy technique. We employ a graphene sensing layer in close proximity to the WSe2/WS2 moire superlattice for Wigner crystal imaging, where local STM tunneling current into the graphene sensing layer is modulated by the underlying electron lattice of the Wigner crystal in the WSe2/WS2 heterostructure. Our measurement directly visualizes different lattice configurations associated with Wigner crystal states at fractional electron fillings of n = 1/3, 1/2, and 2/3, where n is the electron number per site. The n=1/3 and n=2/3 Wigner crystals are observed to exhibit a triangle and a honeycomb lattice, respectively, in order to minimize nearest-neighbor occupations. The n = 1/2 state, on the other hand, spontaneously breaks the original C3 symmetry and forms a stripe structure in real space. Our study lays a solid foundation toward the fundamental understanding of rich Wigner crystal states in WSe2/WS2 moire heterostructures.
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