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We develop a general theory for two-dimensional (2D) anomalous Floquet higher-order topological superconductors (AFHOTSC), which are dynamical Majorana-carrying phases of matter with no static counterpart. Despite the triviality of its bulk Floquet bands, an AFHOTSC generically features the simultaneous presence of corner-localized Majorana modes at both zero and $pi/T$ quasi-energies, a phenomenon beyond the scope of any static topological band theory. We show that the key to AFHOTSC is its unavoidable singular behavior in the phase spectrum of the bulk time-evolution operator. By mapping such evolution-phase singularities to the stroboscopic boundary signatures, we classify all 2D AFHOTSCs that are protected by a rotation group symmetry in symmetry class D. We further extract a higher-order topological index for unambiguously predicting the presence of Floquet corner Majorana modes, which we confirm numerically. Our theory serves as a milestone towards a dynamical topological theory for Floquet superconducting systems.
Periodically-driven or Floquet systems can realize anomalous topological phenomena that do not exist in any equilibrium states of matter, whose classification and characterization require new theoretical ideas that are beyond the well-established paradigm of static topological phases. In this work, we provide a general framework to understand anomalous Floquet higher-order topological insulators (AFHOTIs), the classification of which has remained a challenging open question. In two dimensions (2D), such AFHOTIs are defined by their robust, symmetry-protected corner modes pinned at special quasienergies, even though all their Floquet bands feature trivial band topology. The corner-mode physics of an AFHOTI is found to be generically indicated by 3D Dirac/Weyl-like topological singularities living in the phase spectrum of the bulk time-evolution operator. Physically, such a phase-band singularity is essentially a footprint of the topological quantum criticality, which separates an AFHOTI from a trivial phase adiabatically connected to a static limit. Strikingly, these singularities feature unconventional dispersion relations that cannot be achieved on any static lattice in 3D, which, nevertheless, resemble the surface physics of 4D topological crystalline insulators. We establish the above higher-order bulk-boundary correspondence through a dimensional reduction technique, which also allows for a systematic classification of 2D AFHOTIs protected by point group symmetries. We demonstrate applications of our theory to two concrete, experimentally feasible models of AFHOTIs protected by $C_2$ and $D_4$ symmetries, respectively. Our work paves the way for a unified theory for classifying and characterizing Floquet topological matters.
Higher order topological insulators (HOTI) have emerged as a new class of phases, whose robust in-gap corner modes arise from the bulk higher-order multipoles beyond the dipoles in conventional topological insulators. Here, we incorporate Floquet driving into HOTIs, and report for the first time a dynamical polarization theory with anomalous non-equilibrium multipoles. Further, a proposal to detect not only corner states but also their dynamical origin in cold atoms is demonstrated, with the latter one never achieved before. Experimental determination of anomalous Floquet corner modes are also proposed.
The mathematical field of topology has become a framework to describe the low-energy electronic structure of crystalline solids. A typical feature of a bulk insulating three-dimensional topological crystal are conducting two-dimensional surface states. This constitutes the topological bulk-boundary correspondence. Here, we establish that the electronic structure of bismuth, an element consistently described as bulk topologically trivial, is in fact topological and follows a generalized bulk-boundary correspondence of higher-order: not the surfaces of the crystal, but its hinges host topologically protected conducting modes. These hinge modes are protected against localization by time-reversal symmetry locally, and globally by the three-fold rotational symmetry and inversion symmetry of the bismuth crystal. We support our claim theoretically and experimentally. Our theoretical analysis is based on symmetry arguments, topological indices, first-principle calculations, and the recently introduced framework of topological quantum chemistry. We provide supporting evidence from two complementary experimental techniques. With scanning-tunneling spectroscopy, we probe the unique signatures of the rotational symmetry of the one-dimensional states located at step edges of the crystal surface. With Josephson interferometry, we demonstrate their universal topological contribution to the electronic transport. Our work establishes bismuth as a higher-order topological insulator.
The recent discoveries of higher-order topological insulators (HOTIs) have shifted the paradigm of topological materials, which was previously limited to topological states at boundaries of materials, to those at boundaries of boundaries, such as corners . So far, all HOTI realisations have assumed static equilibrium described by time-invariant Hamiltonians, without considering time-variant or nonequilibrium properties. On the other hand, there is growing interest in nonequilibrium systems in which time-periodic driving, known as Floquet engineering, can induce unconventional phenomena including Floquet topological phases and time crystals. Recent theories have attemped to combine Floquet engineering and HOTIs, but there has thus far been no experimental realisation. Here we report on the experimental demonstration of a two-dimensional (2D) Floquet HOTI in a three-dimensional (3D) acoustic lattice, with modulation along z axis serving as an effective time-dependent drive. Direct acoustic measurements reveal Floquet corner states that have time-periodic evolution, whose period can be even longer than the underlying drive, a feature previously predicted for time crystals. The Floquet corner states can exist alongside chiral edge states under topological protection, unlike previous static HOTIs. These results demonstrate the unique space-time dynamic features of Floquet higher-order topology.
Higher order topological insulators (HOTIs) are a new class of topological materials which host protected states at the corners or hinges of a crystal. HOTIs provide an intriguing alternative platform for helical and chiral edge states and Majorana modes, but there are very few known materials in this class. Recent studies have proposed Bi as a potential HOTI, however, its topological classification is not yet well accepted. In this work, we show that the (110) facets of Bi and BiSb alloys can be used to unequivocally establish the topology of these systems. Bi and Bi$_{0.92}$Sb$_{0.08}$ (110) films were grown on silicon substrates using molecular beam epitaxy and studied by scanning tunneling spectroscopy. The surfaces manifest rectangular islands which show localized hinge states on three out of the four edges, consistent with the theory for the HOTI phase. This establishes Bi and Bi$_{0.92}$Sb$_{0.08}$ as HOTIs, and raises questions about the topological classification of the full family of Bi$_{x}$Sb$_{1-x}$ alloys.