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Register a new userFabrication and Characterization of Superconducting Quantum Interference Device using (Bi_{1-x}Sb_x)_2Se_3 Topological Insulator Nanoribbons
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We report on the fabrication and electrical transport properties of superconducting quantum interference devices (SQUIDs) made from a (Bi_{1-x}Sb_x)_2Se_3 topological insulator (TI) nanoribbon (NR) connected with Pb0.5In0.5 superconducting electrodes. Below the transition temperature of the superconducting Pb0.5In0.5 electrodes, periodic oscillations of the critical current are observed in the TI NR SQUID under a magnetic field applied perpendicular to the plane owing to flux quantization. Also the output voltage modulates as a function of the external magnetic field. Moreover, the SQUID the SQUID shows a voltage modulation envelope, which is considered to represent the Fraunhofer-like patterns of each single junction. These properties of the TI NR SQUID would provide a useful method to explore Majorana fermions.
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(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb doping level has also been observed, where insulating phase could be achieved at x=0.5. Our results reveal the potential of this system for the study of tunable topological insulator and metal-insulator transition based device physics.
The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially grown (Bi_{1-x}Sb_x)2Te3 topological insulator thin films without degrading the film quality. By combining an in situ deposited Al2O3 capping layer and a SiN_x dielectric layer deposited at low temperature, we were able to protect the films from degradation during the fabrication processes. We demonstrate that by using this top gate, the carriers in the top surface can be efficiently tuned from n- to p-type. We also show that magnetotransport properties give evidence for decoupled transport through top and bottom surfaces for the entire range of gate voltage, which is only possible in truly bulk-insulating samples.
Using non-equilibrium Greens functions, we studied numerically the transport properties of a Josephson junction, superconductor-topological insulator-superconductor hybrid system. Our numerical calculation shows first that proximity-induced superconductivity is indeed observed in the edge states of a topological insulator adjoining two superconducting leads and second that the special characteristics of topological insulators endow the edge states with an enhanced proximity effect with a superconductor but do not forbid the bulk states to do the same. In a size-dependent analysis of the local current, it was found that a few residual bulk states can lead to measurable resistance, whereas because these bulk states spread over the whole sample, their contribution to the interference pattern is insignificant when the sample size is in the micrometer range. Based on these numerical results, it is concluded that the apparent disappearance of residual bulk states in the superconducting interference process as described in Ref. [onlinecite{HartNautrePhys2014f}] is just due to the effects of size: the contribution of the topological edge states outweighs that of the residual bulk states.
We report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectance of (Bi1-xSbx)2Te3 films as gating shifts the Fermi level. Infrared transmittance measurements of gated (Bi1-xSbx)2Te3 films were enabled by use of an epitaxial lift-off method for large-area transfer of topological insulator films from infrared-absorbing SrTiO3 growth substrates to thermal oxidized silicon substrates. We combine these optical experiments with transport measurements and angle-resolved photoemission spectroscopy to identify the observed spectral modulation as a gate-driven transfer of spectral weight between both bulk and topological surface channels and interband and intraband channels. We develop a model for the complex permittivity of gated (Bi1-xSbx)2Te3, and find a good match to our experimental data. These results open the path for layered topological insulator materials as a new candidate for tunable infrared optics and highlight the possibility of switching topological optoelectronic phenomena between bulk and spin-polarized surface regimes.
We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) made of Sb-doped Bi2Se3 topological insulator (TI) nanoribbon (NR) contacted with PbIn superconducting electrodes. When an external magnetic field was applied along the NR axis, the TI NR exhibited periodic magneto-conductance oscillations, the so-called Aharonov-Bohm oscillations, owing to one-dimensional subbands. Below the superconducting transition temperature of PbIn electrodes, we observed supercurrent flow through TI NR-based SQUID. The critical current periodically modulates with a magnetic field perpendicular to the SQUID loop, revealing that the periodicity corresponds to the superconducting flux quantum. Our experimental observations can be useful to explore Majorana bound states (MBS) in TI NR, promising for developing topological quantum information devices.
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