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Register a new userThermodynamic theory of crystal plasticity: formulation and application to polycrystal fcc copper
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We present a thermodynamic description of crystal plasticity. Our formulation is based on the Langer-Bouchbinder-Lookman thermodynamic dislocation theory (TDT), which asserts the fundamental importance of an effective temperature that describes the state of configurational disorder and therefore the dislocation density of the crystalline material. We extend the TDT description from isotropic plasticity to crystal plasticity with many slip systems. Finite-element simulations show favourable comparison with experiments on polycrystal fcc copper under uniaxial compression, tension, and simple shear. The thermodynamic theory of crystal plasticity thus provides a thermodynamically consistent and physically rigorous description of dislocation motion in crystals. We also discuss new insights about the interaction of dislocations belonging to different slip systems.
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Using a partitioned-energy thermodynamic framework which assigns energy to that of atomic configurational stored energy of cold work and kinetic-vibrational, we derive an important constraint on the Taylor-Quinney coefficient, which quantifies the fraction of plastic work that is converted into heat during plastic deformation. Associated with the two energy contributions are two separate temperatures -- the ordinary temperature for the thermal energy and the effective temperature for the configurational energy. We show that the Taylor-Quinney coefficient is a function of the thermodynamically defined effective temperature that measures the atomic configurational disorder in the material. Finite-element analysis of recently published experiments on the aluminum alloy 6016-T4 citep{neto_2020}, using the thermodynamic dislocation theory (TDT), shows good agreement between theory and experiment for both stress-strain behavior and temporal evolution of the temperature. The simulations include both conductive and convective thermal energy loss during the experiments, and significant thermal gradients exist within the simulation results. Computed values of the differential Taylor-Quinney coefficient are also presented and suggest a value which differs between materials and increases with increasing strain.
Plastic deformation in polycrystals is governed by the interplay between intra-granular slip and grain boundary-mediated plasticity. However, while the role played by bulk dislocations is relatively well-understood, the contribution of grain boundaries (GBs) has only recently begun to be studied. GB plasticity is known to play a key role along with bulk plasticity under a wide range of conditions, such as dynamic recovery, superplasticity, severe plastic deformation , etc., and developing models capable of simultaneously capturing GB and bulk plasticity has become a topic of high relevance. In this paper we develop a thermodynamically-consistent polycrystal plasticity model capable of simulating a variety of grain boundary-mediated plastic processes in conjunction with bulk dislocation slip. The model starts from the description of a single crystal and creates lattice strain-free polycrystalline configurations by using a specially-designed multiplicative decomposition developed by the authors. This leads to the introduction of a particular class of geometrically necessary dislocations (GND) that define fundamental GB features such as misorientation and inclination. The evolution of the system is based on an energy functional that uses a non-standard function of the GND tensor to account for the grain boundary energy, as well as for the standard elastic energy. Our implementation builds on smooth descriptions of GBs inspired on diffuse-interface models of grain evolution for numerical convenience. We demonstrate the generality and potential of the methodology by simulating a wide variety of phenomena such as shear-induced GB sliding, coupled GB motion, curvature-induced grain rotation and shrinkage, and polygonization via dislocation sub-grain formation.
Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. We demonstrate coherent propagation of an oxidation front in single-crystal Cu thin film to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer thickness. Grain boundary-free and atomically flat films prepared by atomic-sputtering epitaxy allow tailoring of the oxide layer with an abrupt interface via heat treatment with a suppressed temperature gradient. Color tuning of nearly full-color RGB indices is realized by precise control of oxide-layer thickness; our samples covered ~50.4% of the sRGB color space. The color of copper/copper oxide is realized by the reconstruction of the quantitative yield color from oxide pigment (complex dielectric functions of Cu2O) and light-layer interference (reflectance spectra obtained from the Fresnel equations) to produce structural color. We further demonstrate laser-oxide lithography with micron-scale linewidth and depth through local phase transformation to oxides embedded in the metal, providing spacing necessary for semiconducting transport and optoelectronics functionality.
Crystal plasticity is mediated through dislocations, which form knotted configurations in a complex energy landscape. Once they disentangle and move, they may also be impeded by permanent obstacles with finite energy barriers or frustrating long-range interactions. The outcome of such complexity is the emergence of dislocation avalanches as the basic mechanism of plastic flow in solids at the nanoscale. While the deformation behavior of bulk materials appears smooth, a predictive model should clearly be based upon the character of these dislocation avalanches and their associated strain bursts. We provide here a comprehensive overview of experimental observations, theoretical models and computational approaches that have been developed to unravel the multiple aspects of dislocation avalanche physics and the phenomena leading to strain bursts in crystal plasticity.
The interaction between graphene and metals represents an important issue for the large-area preparation of graphene, graphene transfer and the contact quality in graphene devices. We demonstrate a simple method for estimating and manipulating the level of interaction between graphene and copper single crystals through heat treatment, at temperatures from 298K to 1073K. We performed an in-situ Raman spectroscopy showing Cu face-specific behavior of the overlying graphene during the heat treatment. On Cu(111) the interaction is consistent with theoretical predictions and remains stable, whereas on Cu(100) and Cu(110), the initially very weak interaction and charge transfer can be tuned by heating. Our results also suggest that graphene grown on Cu(100) and Cu(110) is detached from the copper substrate, thereby possibly enabling an easier graphene transfer process as compared to Cu (111).
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