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Register a new userHigh-speed InAs/GaSb Mid-Wave Infrared Interband Cascade Photodetector at Room Temperature
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High speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such high-precision frequency comb spectroscopy and light detection and ranging (LIDAR). In this work, we report a high-speed room-temperature mid-wave infrared interband cascade photodetector (ICIP) based on a type-II InAs/GaSb superlattice. The devices show an optical cut-off wavelength around 5um and a 3-dB bandwidth up to 7.04 GHz. The relatively low dark current density around 9.39 x 10-2 A/cm2 under -0.1 V is also demonstrated at 300 K. These results validate the advantages of ICIPs to achieve both high-frequency operation and low noise at room temperature. Limitations on the high-speed performance of the detector are also discussed based on the S-parameter analysis and other RF performance measurement.
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In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P~I0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photogenerated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm2 under -0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-assisted tunneling, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at ~5.5 um at 70 K under bias of -0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3*10e9 cm*Hz1/2/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface, and suppression of surface leakage channels are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.
We investigate the nonlinear optical response of a commercial extended-wavelength In$_{0.81}$Ga$_{0.19}$As photodetector. Degenerate two-photon absorption in the mid-infrared range is observed at room temperature using a quantum cascade laser emitting at $lambda=4.5~mu$m as the excitation source. From the measured two-photon photocurrent signal we extract a two-photon absorption coefficient $beta^{(2)} = 0.6 pm 0.2$ cm/MW, in agreement with the theoretical value obtained from the $E_g^{-3}$ scaling law. Considering the wide spectral range covered by extended-wavelength In$_x$Ga$_{1-x}$As alloys, this result holds promise for new applications based on two-photon absorption for this family of materials at wavelengths between 1.8 and 5.6 $mu$m.
Methods of optical dynamic nuclear polarization (DNP) open the door to the replenishable hyperpolarization of nuclear spins, boosting their NMR/MRI signature by orders of magnitude. Nanodiamond powder rich in negatively charged Nitrogen Vacancy (NV) defect centers has recently emerged as one such promising platform, wherein 13C nuclei can be hyperpolarized through the optically pumped defects completely at room temperature and at low magnetic fields. Given the compelling possibility of relaying this 13C polarization to nuclei in external liquids, there is an urgent need for the engineered production of highly hyperpolarizable diamond particles. In this paper, we report on a systematic study of various material dimensions affecting optical 13C hyperpolarization in diamond particles -- especially electron irradiation and annealing conditions that drive NV center formation. We discover surprisingly that diamond annealing at elevated temperatures close to 1720C have remarkable effects on the hyperpolarization levels, enhancing them by upto 36-fold over materials annealed through conventional means. We unravel the intriguing material origins of these gains, and demonstrate they arise from a simultaneous improvement in NV electron relaxation time and coherence time, as well as the reduction of paramagnetic content, and an increase in 13C relaxation lifetimes. Overall this points to significant recovery of the diamond lattice from radiation damage as a result of the high-temperature annealing. Our work suggests methods for the guided materials production of fluorescent, 13C hyperpolarized, nanodiamonds and pathways for their use as multi-modal (optical and MRI) imaging and hyperpolarization agents.
A room-temperature mid-infrared (9 um) heterodyne system based on high-performance unipolar optoelectronic devices is presented. The local oscillator (LO) is a quantum cascade laser, while the receiver is an antenna coupled quantum well infrared photodetector optimized to operate in a microcavity configuration. Measurements of the saturation intensity show that these receivers have a linear response up to very high optical power, an essential feature for heterodyne detection. By an accurate passive stabilization of the local oscillator and minimizing the optical feed-back the system reaches, at room temperature, a record value of noise equivalent power of 30 pW at 9um. Finally, it is demonstrated that the injection of microwave signal into our receivers shifts the heterodyne beating over the bandwidth of the devices. This mixing property is a unique valuable function of these devices for signal treatment.
Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide the required balance between sensitivity, speed, operation temperature and frequency range. Here, we demonstrate an uncooled THz PD combining the low (~2000 $k_{B}{mu}m^{-2}$) electronic specific heat of high mobility (> 50000 $cm^{2}V^{-1}s^{-1}$) hBN-encapsulated graphene with the asymmetric field-enhancement produced by a bow-tie antenna resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP $leq$ 160 $pWHz^{-1/2}$), fast response time ($leq 3.3 ns$) and a four orders of magnitude dynamic range, making our devices the fastest, broadband, low noise, room temperature THz PD to date.
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