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Manufacture and Characterization of Graphene Membranes with Suspended Silicon Proof Masses for MEMS and NEMS Applications

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 Added by Xuge Fan
 Publication date 2020
  fields Physics
and research's language is English
 Authors Xuge Fan




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Unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties of graphene make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological challenges, including collapse and rupture of the graphene. We have developed a robust route for realizing membranes made of double-layer CVD graphene and suspending large silicon proof masses on membranes with high yields. We have demonstrated the manufacture of square graphene membranes with side lengths from 7 micro meter to 110 micro meter and suspended proof masses consisting of solid silicon cubes that are from 5 micro meter multiply 5 micro meter multiply 16.4 micro meter to 100 micro meter multiply 100 micro meter multiply 16.4 micro meter in size. Our approach is compatible with wafer-scale MEMS and semiconductor manufacturing technologies, and the manufacturing yields of the graphene membranes with suspended proof masses were greater than 90%, with more than 70% of the graphene membranes having more than 90% graphene area without visible defects. The graphene membranes with suspended proof masses were extremely robust and were able to withstand indentation forces from an atomic force microscope (AFM) tip of up to ~7000 nN. The measured resonance frequencies of the realized structures ranged from tens to hundreds of kHz, with quality factors ranging from 63 to 148. The proposed approach for the reliable and large-scale manufacture of graphene membranes with suspended proof masses will enable the development and study of innovative NEMS devices with new functionalities and improved performances.



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Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, we introduce a method to analyze measured capacitance-voltage data of G/Si Schottky diodes connected in parallel with G/silicon dioxide/Si (GIS) capacitors. We also demonstrate the accurate extraction of the built-in potential ($Phi$$_{bi}$) and the Schottky barrier height from the measurement data independent of the Richardson constant.
The implementation of on-chip MEMS/NEMS transducers for arbitrary resonators is difficult due to a number of difficulties such as material choice, large dissipation, restriction in high frequency, low sensitivity, poor reliability, and poor integrability. We show a universal on-chip transduction scheme, which can be adapted to any MEMS/NEMS resonator. We achieve all electrical, on-chip MEMS/NEMS for any resonator.
We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a chromium mask. Crucially, we implement a gold layer to reduce the device resistance from $approx51.6$ k$mathrm{Omega}$ to $approx236$ $mathrm{Omega}$ at room temperature in order to allow for strain-dependent transport measurements. The graphene is integrated by mechanically transferring it directly onto the actuator using a polymethylmethacrylate membrane. Importantly, the integrated graphene can be nanostructured afterwards to optimize device functionality. The minimum feature size of the structured suspended graphene is 30 nm, which allows for interesting device concepts such as mechanically-tunable nanoconstrictions. Finally, we characterize the fabricated devices by measuring the Raman spectrum as well as the a mechanical resonance frequency of an integrated graphene sheet for different strain values.
Graphene (GR) remarkable mechanical and electrical properties - such as its Youngs modulus, low mass per unit area, natural atomic flatness and electrical conductance - would make it an ideal material for micro and nanoelectromechanical systems (MEMS and NEMS). However, the difficulty of attaching GR to supports coupled with naturally occurring internal defects in a few-layer GR can significantly adversely affect the performance of such devices. Here, we have used a combined contact resonance atomic force microscopy (CR-AFM) and ultrasonic force microscopy (UFM) approach to characterise and map with nanoscale spatial resolution GR membrane properties inaccessible to most conventional scanning probe characterisation techniques. Using a multi-layer GR plate (membrane) suspended over a round hole we show that this combined approach allows access to the mechanical properties, internal structure and attachment geometry of the membrane providing information about both the supported and suspended regions of the system. We show that UFM allows the precise geometrical position of the supported membrane-substrate contact to be located and provides indication of the local variation of its quality in the contact areas. At the same time, we show that by mapping the position sensitive frequency and phase response of CR-AFM response, one can reliably quantify the membrane stiffness, and image the defects in the suspended area of the membrane. The phase and amplitude of experimental CR-AFM measurements show excellent agreement with an analytical model accounting for the resonance of the combined CR-AFM probe-membrane system. The combination of UFM and CR-AFM provide a beneficial combination for investigation of few-layer NEMS systems based on two dimensional materials.
211 - Xuge Fan 2020
Nanoelectromechanical system (NEMS) sensors and actuators could be of use in the development of next generation mobile, wearable, and implantable devices. However, these NEMS devices require transducers that are ultra-small, sensitive and can be fabricated at low cost. Here, we show that suspended double-layer graphene ribbons with attached silicon proof masses can be used as combined spring-mass and piezoresistive transducers. The transducers, which are realized using processes that are compatible with large-scale semiconductor manufacturing technologies, can yield NEMS accelerometers that occupy at least two orders of magnitude smaller die area than conventional state-of-the-art silicon accelerometers.
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