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Laser patterned polymer/nanotube composite electrodes for nanowire transistors on flexible substrates

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 Added by Maxim Shkunov
 Publication date 2017
  fields Physics
and research's language is English




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Fabrication techniques such as laser patterning offer excellent potential for low cost and large area device fabrication. Conductive polymers can be used to replace expensive metallic inks such as silver and gold nanoparticles for printing technology. Electrical conductivity of the polymers can be improved by blending with carbon nanotubes. In this work, formulations of acid functionalised multiwall carbon nanotubes (f-MWCNT) and poly (ethylenedioxythiophene) [PEDOT]: polystyrene sulphonate [PSS] were processed, and thin films were prepared on plastic substrates. Conductivity of PEDOT: PSS increased almost four orders of magnitude after adding f-MWCNT. Work function of PEDOT:PSS/f-MWCNT films was ~ 0.5eV higher as compared to the work function of pure PEDOT:PSS films, determined by Kelvin probe method. Field-effect transistors source-drain electrodes were prepared on PET plastic substrates where PEDOT:PSS/f-MWCNT were patterned using laser ablation at 44mJ/pulse energy to define 36 micron electrode separation. Silicon nanowires were deposited using dielectrophoresis alignment technique to bridge the PEDOT:PSS/f-MWCNT laser patterned electrodes. Finally, top-gated nanowire field effect transistors were completed by depositing parylene C as polymer gate dielectric and gold as the top-gate electrode. Transistor characteristics showed p-type conduction with excellent gate electrode coupling, with an ON/OFF ratio of ~ 200. Thereby, we demonstrate the feasibility of using high workfunction, printable PEDOT:PSS/MWCNT composite inks for patterning source/drain electrodes for nanowire transistors on flexible substrates.



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195 - Adam M. Weidling 2021
Fabricating high-performance and/or high-density flexible electronics on plastic substrates is often limited by the poor dimensional stability of polymer substrates. This can be mitigated by using glass carriers during fabrication, but removing the plastic substrate from a large-area carrier without damaging the electronics remains challenging. Here we present a large-area photonic lift-off (PLO) process to rapidly separate polymer films from rigid carriers. PLO uses a 150 microsecond pulse of broadband light from flashlamps to lift off functional thin films from a glass carrier substrate coated with a light-absorber layer (LAL). A 3D finite element model indicates that the polymer/LAL interface reaches 865 degrees C during PLO, but the top surface of the PI reaches only 118 degrees C. To demonstrate the feasibility of this process in the production of flexible electronics, an array of indium zinc oxide (IZO) thin-film transistors (TFTs) was fabricated on a polyimide substrate and then photonically lifted off from the glass carrier. The TFT mobility was 3.15 cm2V-1s-1 before and after PLO, indicating no significant change during PLO. The flexible TFTs were mechanically robust, with no reduction in mobility while bent. The PLO process can offer unmatched high-throughput solutions in large-area flexible electronics production.
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We study the percolation properties for a system of functionalized colloids on patterned substrates via Monte Carlo simulations. The colloidal particles are modeled as hard disks with three equally-distributed attractive patches on their perimeter. We describe the patterns on the substrate as circular potential wells of radius $R_p$ arranged in a regular square or hexagonal lattice. We find a nonmonotonic behavior of the percolation threshold (packing fraction) as a function of $R_p$. For attractive wells, the percolation threshold is higher than the one for clean (non-patterned) substrates if the circular wells are non-overlapping and can only be lower if the wells overlap. For repulsive wells we find the opposite behavior. In addition, at high packing fractions the formation of both structural and bond defects suppress percolation. As a result, the percolation diagram is reentrant with the non-percolated state occurring at very low and intermediate densities.
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