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Register a new userTrigger of the ubiquitous surface band bending in 3D topological insulators
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Added by
Emmanouil Frantzeskakis
Publication date
2017
fields
Physics
and research's language is
English
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The main scientific activity in the field of topological insulators (TIs) consists of determining their electronic structure by means of magneto-transport and electron spectroscopy with a view to devices based on topological transport. There is however a caveat in this approach. There are systematic experimental discrepancies on the electronic structure of the most pristine surfaces of TI single crystals as determined by Shubnikov de Haas (SdH) oscillations and by Angle Resolved PhotoElectron Spectroscopy (ARPES). We identify intense ultraviolet illumination -that is inherent to an ARPES experiment- as the source for these experimental differences. We explicitly show that illumination is the key parameter, or in other words the trigger, for energetic shifts of electronic bands near the surface of a TI crystal. This finding revisits the common belief that surface decoration is the principal cause of surface band bending and explains why band bending is not a prime issue in the illumination-free magneto-transport studies. Our study further clarifies the role of illumination on the electronic band structure of TIs by revealing its dual effect: downward band bending on very small timescales followed by band flattening at large timescales. Our results therefore allow us to present and predict the complete evolution of the band structure of TIs in a typical ARPES experiment. By virtue of our findings, we pinpoint two alternatives of how to approach flat band conditions by means of photon-based techniques and we suggest a microscopic mechanism that can explain the underlying phenomena.
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We derive the spin texture of a weak topological insulator via a supersymmetric approach that includes the roles of the bulk gap edge states and surface band bending. We find the spin texture can take one of four forms: (i) helical, (ii) hyperbolic, (iii) hedgehog, with spins normal to the Dirac-Weyl cone of the surface state, and (iv) hyperbolic hedgehog. Band bending determines the winding number in the case of a helical texture, and for all textures can be used to tune the spin texture polarization to zero. For the weak topological insulator SnTe, we show that inclusion of band bending is crucial to obtain the correct texture winding number for the (111) surface facet $Gamma$-point Dirac-Weyl cone. We argue that hedgehogs will be found only in low symmetry situations.
In magnetic topological insulators (TIs), the interplay between magnetic order and nontrivial topology can induce fascinating topological quantum phenomena, such as the quantum anomalous Hall effect, chiral Majorana fermions and axion electrodynamics. Recently, a great deal of attention has been focused on the intrinsic magnetic TIs, where disorder effects can be eliminated to a large extent, which is expected to facilitate the emergence of topological quantum phenomena. In despite of intensive efforts, experimental evidence of the topological surface states (SSs) remains elusive. Here, by combining first-principles calculations and angle-resolved photoemission spectroscopy (ARPES) experiments, we have revealed that EuSn2As2 is an antiferromagnetic TI with observation of Dirac SSs consistent with our prediction. We also observe nearly gapless Dirac SSs in antiferromagnetic TIs MnBi2nTe3n+1 (n = 1 and 2), which were absent in previous ARPES results. These results provide clear evidence for nontrivial topology of these intrinsic magnetic TIs. Furthermore, we find that the topological SSs show no observable changes across the magnetic transition within the experimental resolution, indicating that the magnetic order has quite small effect on the topological SSs, which can be attributed to weak hybridization between the localized magnetic moments, from either 4f or 3d orbitals, and the topological electronic states. This provides insights for further research that the correlations between magnetism and topological states need to be strengthened to induce larger gaps in the topological SSs, which will facilitate the realization of topological quantum phenomena at higher temperatures.
We reanalyze some of the critical transport experiments and provide a coherent understanding of the current generation of topological insulators (TIs). Currently TI transport studies abound with widely varying claims of the surface and bulk states, often times contradicting each other, and a proper understanding of TI transport properties is lacking. According to the simple criteria given by Mott and Ioffe-Regel, even the best TIs are not true insulators in the Mott sense, and at best, are weakly-insulating bad metals. However, band-bending effects contribute significantly to the TI transport properties including Shubnikov de-Haas oscillations, and we show that utilization of this band-bending effect can lead to a Mott insulating bulk state in the thin regime. In addition, by reconsidering previous results on the weak anti-localization (WAL) effect with additional new data, we correct a misunderstanding in the literature and generate a coherent picture of the WAL effect in TIs.
The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard x-ray photospectroscopy (HAXPES). We tracked the depth dependence of the energy shift of Bi and Se core states. We estimate that the band bending extends up to about 20 nm into the bulk with an amplitude of 0.23--0.26 eV, consistent with profiles previously deduced from the binding energies of surface states in this material.
With their broad range of magnetic, electronic and structural properties, transition metal perovskite oxides ABO3 have long served as a platform for testing condensed matter theories. In particular, their insulating character - found in most compounds - is often ascribed to dynamical electronic correlations through the celebrated Mott-Hubbard mechanism where gaping arises from a uniform, symmetry-preserving electron repulsion mechanism. However, structural distortions are ubiquitous in perovskites and their relevance with respect to dynamical correlations in producing this rich array of properties remains an open question. Here, we address the origin of band gap opening in the whole family of 3d perovskite oxides. We show that a single-determinant mean-field approach such as density functional theory (DFT) successfully describes the structural, magnetic and electronic properties of the whole series, at low and high temperatures. We find that insulation occurs via energy-lowering crystal symmetry reduction (octahedral rotations, Jahn-Teller and bond disproportionation effects), as well as intrinsic electronic instabilities, all lifting orbital degeneracies. Our work therefore suggests that whereas ABO3 oxides may be complicated, they are not necessarily strongly correlated. It also opens the way towards systematic investigations of doping and defect physics in perovskites, essential for the full realization of oxide-based electronics.
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