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Register a new userDirect observation of band bending in topological insulator Bi2Se3
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The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard x-ray photospectroscopy (HAXPES). We tracked the depth dependence of the energy shift of Bi and Se core states. We estimate that the band bending extends up to about 20 nm into the bulk with an amplitude of 0.23--0.26 eV, consistent with profiles previously deduced from the binding energies of surface states in this material.
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We investigate the ultrafast transient absorption spectrum of Bi2Se3 topological insulator. Bi2Se3 single crystal is grown through conventional solid-state reaction routevia self-flux method. The structural properties have been studied in terms of high-resolution Powder X-ray Diffraction (PXRD). Detailed Rietveld analysis of PXRD of the crystal showed that sample is crystallized in the rhombohedral crystal structure with a space group of R-3m, and the lattice parameters are a=b=4.14A and c=28.7010A. Scanning Electron Microscopy (SEM) result shows perfectly crystalline structure with layered type morphology which evidenced from surface XRD. Energy Dispersive Spectroscopy (EDS) analysis determined quantitative amounts of the constituent atoms, found to be very close to their stoichiometric ratio. Further the fluence dependent nonlinear behaviour is studied by means of ultrafast transient absorption spectroscopy. The ultrafast spectroscopy also predicts the capability of this single crystal to generate Terahertz (THz) radiations (T-rays).
We present a magneto-infrared spectroscopic study of thin Bi2Se3 single crystal flakes. Magneto-infrared transmittance and reflectance measurements are performed in the Faraday geometry at 4.2K in a magnetic field up to 17.5T. Thin Bi2Se3 flakes (much less than 1{mu}m thick) are stabilized on the Scotch tape, and the reduced thickness enables us to obtain appreciable far-infrared transmission through the highly reflective Bi2Se3 single crystals. A pronounced electron-phonon coupling is manifested as a Fano resonance at the {alpha} optical phonon mode in Bi2Se3, resulting from the quantum interference between the optical phonon mode and the continuum of the electronic states. However, the Fano resonance exhibits no systematic line broadening, in contrast to the earlier observation of a similar Fano resonance in Bi2Se3 using magneto-infrared reflectance spectroscopy.
We report on time-resolved ultrafast optical spectroscopy study of the topological insulator (TI) Bi$_2$Se$_3$. We unravel that a net spin polarization can not only be generated using circularly polarized light via interband transitions between topological surface states (SSs), but also via transitions between SSs and bulk states. Our experiment demonstrates that tuning photon energy or temperature can essentially allow for photoexcitation of spin-polarized electrons to unoccupied topological SSs with two distinct spin relaxation times ($sim$25 fs and $sim$300 fs), depending on the coupling between SSs and bulk states. The intrinsic mechanism leading to such distinctive spin dynamics is the scattering in SSs and bulk states which is dominated by $E_g^2$ and $A_{1g}^1$ phonon modes, respectively. These findings are suggestive of novel ways to manipulate the photoinduced coherent spins in TIs.
The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit.
Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and nanoscale potential fluctuation in single crystals of archetypal topological insulator Bi2Se3. Here it is established that the defect concentrations in Bi2Se3 are far above the thermodynamic limit, and that the growth kinetics dominate the observed defect concentrations. Furthermore, through careful control of the synthesis, our tunneling spectroscopy suggests that our best samples are approaching the intrinsic limit with the Fermi level inside the band gap without introducing extrinsic dopants.
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