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Register a new userThe role of frequency dependence in dynamical gap generation in graphene
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We study the frequency dependencies of the fermion and photon dressing functions in dynamical gap generation in graphene. We use a low energy effective QED-like description, but within this approximation, we include all frequency dependent effects including retardation. We obtain the critical coupling by calculating the gap using a non-perturbative Dyson-Schwinger approach. Compared to the results of our previous calculation [1] which used a Lindhard screening approximation instead of including a self-consistently calculated dynamical screening function, the critical coupling is substantially reduced.
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We study the frequency dependencies in the renormalization of the fermion Greens function for the $pi$-band electrons in graphene and their influence on the dynamical gap generation at sufficiently strong interaction. Adopting the effective QED-like description for the low-energy excitations within the Dirac-cone region we self consistently solve the fermion Dyson-Schwinger equation in various approximations for the photon propagator and the vertex function with special emphasis on frequency dependent Lindhard screening and retardation effects.
We study the effect of a Chern-Simons term on dynamical gap generation in a low energy effective theory that describes some features of mono-layer suspended graphene. We use a non-perturbative Schwinger-Dyson approach. We solve a set of coupled integral equations for eight independent dressing functions that describe fermion and photon degrees of freedom. We find a strong suppression of the gap, and corresponding increase in the critical coupling, as a function of increasing Chern-Simons coefficient.
We have measured a strong increase of the low-temperature resistivity $rho_{xx}$ and a zero-value plateau in the Hall conductivity $sigma_{xy}$ at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in $rho_{xx}$ and the anomalous $ u=0$ plateau in $sigma_{xy}$ in terms of coexisting electrons and holes in the same spin-split zero-energy Landau level.
The density of electron-hole pairs produced in a graphene sample immersed in a homogeneous time-dependent electrical field is evaluated. Because low energy charge carriers in graphene are described by relativistic quantum mechanics, the calculation is performed within the strong field quantum electrodynamics formalism, requiring a solution of the Dirac equation in momentum space. The latter is solved using a split-operator numerical scheme on parallel computers, allowing for the investigation of several field configurations. The strength of the method is illustrated by computing the electron momentum density generated from a realistic laser pulse model. We observe quantum interference patterns reminiscent of Landau-Zener-St{u}ckelberg interferometry.
Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which leads to spin relaxation by the Dyakonov-Perel mechanism. Analytical estimates and Monte Carlo simulations show that the corresponding spin relaxation times are between micro- to milliseconds, being only weakly temperature dependent. It is also argued that the presence of adatoms on graphene can lead to spin lifetimes shorter than nanoseconds.
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