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Register a new userAnalysis and mitigation of interface losses in trenched superconducting coplanar waveguide resonators
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Improving the performance of superconducting qubits and resonators generally results from a combination of materials and fabrication process improvements and design modifications that reduce device sensitivity to residual losses. One instance of this approach is to use trenching into the device substrate in combination with superconductors and dielectrics with low intrinsic losses to improve quality factors and coherence times. Here we demonstrate titanium nitride coplanar waveguide resonators with mean quality factors exceeding two million and controlled trenching reaching 2.2 $mu$m into the silicon substrate. Additionally, we measure sets of resonators with a range of sizes and trench depths and compare these results with finite-element simulations to demonstrate quantitative agreement with a model of interface dielectric loss. We then apply this analysis to determine the extent to which trenching can improve resonator performance.
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Superconducting quantum computing architectures comprise resonators and qubits that experience energy loss due to two-level systems (TLS) in bulk and interfacial dielectrics. Understanding these losses is critical to improving performance in superconducting circuits. In this work, we present a method for quantifying the TLS losses of different bulk and interfacial dielectrics present in superconducting coplanar waveguide (CPW) resonators. By combining statistical characterization of sets of specifically designed CPW resonators on isotropically etched silicon substrates with detailed electromagnetic modeling, we determine the separate loss contributions from individual material interfaces and bulk dielectrics. This technique for analyzing interfacial TLS losses can be used to guide targeted improvements to qubits, resonators, and their superconducting fabrication processes.
We study the loss rate for a set of lambda/2 coplanar waveguide resonators at millikelvin temperatures (20 mK - 900mK) and different applied powers (3E-19 W - 1E-12 W). The loss rate becomes power independent below a critical power. For a fixed power, the loss rate increases significantly with decreasing temperature. We show that this behavior can be caused by two-level systems in the surrounding dielectric materials. Interestingly, the influence of the two-level systems is of the same order of magnitude for the different material combinations. That leads to the assumption that the nature of these two-level systems is material independent.
We report on the design, fabrication and characterization of superconducting coplanar waveguide resonators with nanoscopic constrictions. By reducing the size of the center line down to 50 nm, the radio frequency currents are concentrated and the magnetic field in its vicinity is increased. The device characteristics are only slightly modified by the constrictions, with changes in resonance frequency lower than 1% and internal quality factors of the same order of magnitude as the original ones. These devices could enable the achievement of higher couplings to small magnetic samples or even to single molecular spins and have applications in circuit quantum electrodynamics, quantum computing and electron paramagnetic resonance.
Losses in superconducting planar resonators are presently assumed to predominantly arise from surface-oxide dissipation, due to experimental losses varying with choice of materials. We model and simulate the magnitude of the loss from interface surfaces in the resonator, and investigate the dependence on power, resonator geometry, and dimensions. Surprisingly, the dominant surface loss is found to arise from the metal-substrate and substrate-air interfaces. This result will be useful in guiding device optimization, even with conventional materials.
We have measured noise in thin-film superconducting coplanar waveguide resonators. This noise appears entirely as phase noise, equivalent to a jitter of the resonance frequency. In contrast, amplitude fluctuations are not observed at the sensitivity of our measurement. The ratio between the noise power in the phase and amplitude directions is large, in excess of 30 dB. These results have important implications for resonant readouts of various devices such as detectors, amplifiers, and qubits. We suggest that the phase noise is due to two-level systems in dielectric materials.
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