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Register a new userLosses in coplanar waveguide resonators at millikelvin temperatures
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We study the loss rate for a set of lambda/2 coplanar waveguide resonators at millikelvin temperatures (20 mK - 900mK) and different applied powers (3E-19 W - 1E-12 W). The loss rate becomes power independent below a critical power. For a fixed power, the loss rate increases significantly with decreasing temperature. We show that this behavior can be caused by two-level systems in the surrounding dielectric materials. Interestingly, the influence of the two-level systems is of the same order of magnitude for the different material combinations. That leads to the assumption that the nature of these two-level systems is material independent.
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We report on the design, fabrication and characterization of superconducting coplanar waveguide resonators with nanoscopic constrictions. By reducing the size of the center line down to 50 nm, the radio frequency currents are concentrated and the magnetic field in its vicinity is increased. The device characteristics are only slightly modified by the constrictions, with changes in resonance frequency lower than 1% and internal quality factors of the same order of magnitude as the original ones. These devices could enable the achievement of higher couplings to small magnetic samples or even to single molecular spins and have applications in circuit quantum electrodynamics, quantum computing and electron paramagnetic resonance.
Superconducting quantum computing architectures comprise resonators and qubits that experience energy loss due to two-level systems (TLS) in bulk and interfacial dielectrics. Understanding these losses is critical to improving performance in superconducting circuits. In this work, we present a method for quantifying the TLS losses of different bulk and interfacial dielectrics present in superconducting coplanar waveguide (CPW) resonators. By combining statistical characterization of sets of specifically designed CPW resonators on isotropically etched silicon substrates with detailed electromagnetic modeling, we determine the separate loss contributions from individual material interfaces and bulk dielectrics. This technique for analyzing interfacial TLS losses can be used to guide targeted improvements to qubits, resonators, and their superconducting fabrication processes.
We describe measurements on microwave coplanar resonators designed for quantum bit experiments. Resonators have been patterned onto sapphire and silicon substrates, and quality factors in excess of a million have been observed. The resonant frequency shows a high sensitivity to magnetic field applied perpendicular to the plane of the film, with a quadratic dependence for the fundamental, second and third harmonics. Frequency shift of hundreds of linewidths can be obtained.
We have designed and fabricated superconducting coplanar waveguide resonators with fundamental frequencies from 2 to $9 rm{GHz}$ and loaded quality factors ranging from a few hundreds to a several hundred thousands reached at temperatures of $20 rm{mK}$. The loaded quality factors are controlled by appropriately designed input and output coupling capacitors. The measured transmission spectra are analyzed using both a lumped element model and a distributed element transmission matrix method. The experimentally determined resonance frequencies, quality factors and insertion losses are fully and consistently characterized by the two models for all measured devices. Such resonators find prominent applications in quantum optics and quantum information processing with superconducting electronic circuits and in single photon detectors and parametric amplifiers.
Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8times10^5$, while thicker SiN buffer layers led to reduced $Q_i$s at low power.
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