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VSe2 is a transition metal dichaclogenide which has a charge-density wave transition that has been well studied. We report on a low-temperature upturn in the resistivity and, at temperatures below this resistivity minimum, an unusual magnetoresistance which is negative at low fields and positive at higher fields, in single crystals of VSe2. The negative magnetoresistance has a parabolic dependence on the magnetic field and shows little angular dependence. The magnetoresistance at temperatures above the resistivity minimum is always positive. We interpret these results as signatures of the Kondo effect in VSe2. An upturn in the susceptibility indicates the presence of interlayer V ions which can provide the localized magnetic moments required for scattering the conduction electrons in the Kondo effect. The low-temperature behaviour of the heat capacity, including a high value of gamma, along with a deviation from a Curie-Weiss law observed in the low-temperature magnetic susceptibility, are consistent with the presence of magnetic interactions between the paramagnetic interlayer V ions and a Kondo screening of these V moments.
We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% mathcal{N}$ electrons, with $mathcal{N}$ up to four. We show that the Kondo resonance appears in the $mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in the $mathcal{N}=4$ one, in contrast to the spin-1/2 Kondo effect, which only occurs at $mathcal{N}=$ odd. Assuming large orbital level spacings, the energy states of the dot can be simply characterized by fourfold spin-valley degrees of freedom. The density of states (DOS) is obtained as a function of temperature and applied magnetic field using a finite-U equation-of-motion approach. The structure in the DOS can be detected in transport experiments. The Kondo resonance is split by the Zeeman splitting and valley splitting for double- and triple-electron Si dots, in a similar fashion to single-electron ones. The peak structure and splitting patterns are much richer for the spin-valley Kondo effect than for the pure spin Kondo effect.
Heavy fermion (HF) materials exhibit a rich array of phenomena due to the strong Kondo coupling between their localized moments and itinerant electrons. A central question in their study is to understand the interplay between magnetic order and charge transport, and its role in stabilizing new quantum phases of matter. Particularly promising in this regard is a family of tetragonal intermetallic compounds Ce{$TX$}$_2$ ($T=$ transition metal, $X=$ pnictogen), that includes a variety of HF compounds showing $T$-linear electronic specific heat $bf{C_e sim gamma T}$, with $gammasim$ 20-500 mJ$cdot$mol$^{-1}$~K$^{-2}$, reflecting an effective mass enhancement ranging from small to modest. Here, we study the low-temperature field-tuned phase diagram of high-quality CeAgBi$_2$ using magnetometry and transport measurements. We find an antiferromagnetic transition at ${T_{N} = 6.4}$~K with weak magnetic anisotropy and the easy axis along the $c$-axis, similar to previous reports (${T_{N} = 6.1}$~K). This scenario, along with the presence of two anisotropic Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, leads to a rich field-tuned magnetic phase diagram, consisting of five metamagnetic transitions of both first and second order. In addition, we unveil an anomalous Hall contribution for fields $H<54$ kOe which is drastically altered when $H$ is tuned through a trio of transitions at 57, 78, and 84~kOe, suggesting that the Fermi surface is reconstructed in a subset of the metamagnetic transitions.
This is a popular review of some recent investigations of the Kondo effect in a variety of mesoscopic systems. After a brief introduction, experiments are described where a scanning tunneling microscope measures the surroundings of a magnetic impurity on a metal surface. In another set of experiments, Kondo effect creates a number of characteristic features in the electron transport through small electronic devices -- semiconductor quantum dots or single-molecule transistors which can be tuned by applying appropriate gate voltages. The article contains 5 color figures, photo of Jun Kondo, but no equations.
Monolayer 1T-VSe2 has been reported as a room-temperature ferromagnet. In this work, by using first-principles calculations, we unveil that the ferromagnetism in monolayer 1T-VSe2 is originated from its intrinsic huge Stoner instability enhanced by the confinement effect, which can eliminate the interlayer coupling, and lead to a drastic increase of the density of states at the Fermi level due to the presence of Van Hove singularity. Our calculations also demonstrate that the Stoner instability is very sensitive to the interlayer distance. These results provide a useful route to modulate the nonmagnetic to ferromagnetic transition in few-layers or bulk 1T-VSe2, which also shed light on the enhancement of its Curie temperature by enlarging the interlayer distance.
We present a systematic study of both the temperature and frequency dependence of the optical response in TaAs, a material that has recently been realized to host the Weyl semimetal state. Our study reveals that the optical conductivity of TaAs features a narrow Drude response alongside a conspicuous linear dependence on frequency. The width of the Drude peak decreases upon cooling, following a $T^{2}$ temperature dependence which is expected for Weyl semimetals. Two linear components with distinct slopes dominate the 5-K optical conductivity. A comparison between our experimental results and theoretical calculations suggests that the linear conductivity below $sim$230~cm$^{-1}$ is a clear signature of the Weyl points lying in very close proximity to the Fermi energy.