No Arabic abstract
Heavy fermion (HF) materials exhibit a rich array of phenomena due to the strong Kondo coupling between their localized moments and itinerant electrons. A central question in their study is to understand the interplay between magnetic order and charge transport, and its role in stabilizing new quantum phases of matter. Particularly promising in this regard is a family of tetragonal intermetallic compounds Ce{$TX$}$_2$ ($T=$ transition metal, $X=$ pnictogen), that includes a variety of HF compounds showing $T$-linear electronic specific heat $bf{C_e sim gamma T}$, with $gammasim$ 20-500 mJ$cdot$mol$^{-1}$~K$^{-2}$, reflecting an effective mass enhancement ranging from small to modest. Here, we study the low-temperature field-tuned phase diagram of high-quality CeAgBi$_2$ using magnetometry and transport measurements. We find an antiferromagnetic transition at ${T_{N} = 6.4}$~K with weak magnetic anisotropy and the easy axis along the $c$-axis, similar to previous reports (${T_{N} = 6.1}$~K). This scenario, along with the presence of two anisotropic Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, leads to a rich field-tuned magnetic phase diagram, consisting of five metamagnetic transitions of both first and second order. In addition, we unveil an anomalous Hall contribution for fields $H<54$ kOe which is drastically altered when $H$ is tuned through a trio of transitions at 57, 78, and 84~kOe, suggesting that the Fermi surface is reconstructed in a subset of the metamagnetic transitions.
The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strain state, and oxygen deficiency. Despite substantial differences in the magnetic properties and magnitudes of the anomalous Hall conductivity $sigma_{xy}^{rm AHE}$ and the longitudinal conductivity $sigma_{xx}$ over several orders of magnitude, a universal scaling relation $sigma_{xy}^{rm AHE} propto sigma_{xx}^{alpha}$ with $alpha = 1.69 pm 0.08$ was found for all investigated samples. Our results are in agreement with recent theoretical and experimental findings for ferromagnetic metals in the dirty limit, where transport is by metallic conduction. We find the same scaling relation for magnetite, where hopping transport prevails. The fact that this relation is independent of crystallographic orientation, Zn content, strain state, and oxygen deficiency suggests that it is universal and particularly does not depend on the nature of the transport mechanism.
VSe2 is a transition metal dichaclogenide which has a charge-density wave transition that has been well studied. We report on a low-temperature upturn in the resistivity and, at temperatures below this resistivity minimum, an unusual magnetoresistance which is negative at low fields and positive at higher fields, in single crystals of VSe2. The negative magnetoresistance has a parabolic dependence on the magnetic field and shows little angular dependence. The magnetoresistance at temperatures above the resistivity minimum is always positive. We interpret these results as signatures of the Kondo effect in VSe2. An upturn in the susceptibility indicates the presence of interlayer V ions which can provide the localized magnetic moments required for scattering the conduction electrons in the Kondo effect. The low-temperature behaviour of the heat capacity, including a high value of gamma, along with a deviation from a Curie-Weiss law observed in the low-temperature magnetic susceptibility, are consistent with the presence of magnetic interactions between the paramagnetic interlayer V ions and a Kondo screening of these V moments.
We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% mathcal{N}$ electrons, with $mathcal{N}$ up to four. We show that the Kondo resonance appears in the $mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in the $mathcal{N}=4$ one, in contrast to the spin-1/2 Kondo effect, which only occurs at $mathcal{N}=$ odd. Assuming large orbital level spacings, the energy states of the dot can be simply characterized by fourfold spin-valley degrees of freedom. The density of states (DOS) is obtained as a function of temperature and applied magnetic field using a finite-U equation-of-motion approach. The structure in the DOS can be detected in transport experiments. The Kondo resonance is split by the Zeeman splitting and valley splitting for double- and triple-electron Si dots, in a similar fashion to single-electron ones. The peak structure and splitting patterns are much richer for the spin-valley Kondo effect than for the pure spin Kondo effect.
The structural and magnetic anomaly of the layered compound SrFeO$_{2}$ were examined by first principles density functional calculations and Monte Carlo simulations. The down-spin Fe 3$d$ electron occupies the $d_{z^2}$ level rather than the degenerate ($d_{xz}$, $d_{yz}$) levels, which explains the absence of Jahn-Teller instability, the easy ab-plane magnetic anisotropy and the observed three-dimensional (0.5, 0.5, 0.5) antiferromagnetic order. Monte Carlo simulations show that the strong inter-layer spin exchange is essential for the high Neel temperature.
We report a comprehensive investigation of the structural, magnetic, transport and thermodynamic properties of a single crystal PrAlSi, in comparison to its nonmagnetic analogue LaAlSi. PrAlSi exhibits a ferromagnetic transition at $T_C$ = 17.8 K which, however, is followed by two weak phase transitions at lower temperatures. Based on the combined dc and ac magnetic susceptibility measurements, we propose the two reentrant magnetic phases below $T_C$ to be spin glasses or ferromagnetic cluster glasses. When the magnetic glassy states are suppressed by small field, several remarkable features appear. These include a linear, nonsaturating magnetoresistance as a function of field that is reminiscent of a topological or charge-compensated semimetal, and a large anomalous Hall conductivity amounting to $sim$2000 $Omega ^{-1}$cm$^{-1}$. Specific-heat measurements indicate a non-Kramers doublet ground state and a relatively low crystal electric field splitting of the Pr$^{3+}$ multiplets of less than 100 K. Shubnikov-de Hass oscillations are absent in LaAlSi, whereas they are clearly observed below about 25 K in PrAlSi, with an unusual temperature dependence of the dominating oscillation frequency $F$. It increases from $F$ = 18 T at 25 K to $F$ = 33 T at 2 K, hinting at an emerging Fermi pocket upon cooling into the ordered phase. These results suggest that PrAlSi is a new system where a small Fermi pocket of likely relativistic fermions is strongly coupled to magnetism. Whether hybridization between $f$ and conduction band is also involved remains an intriguing open problem.