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Register a new userStrong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems
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Elizabeth Marcellina
Publication date
2017
fields
Physics
and research's language is
English
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With a view to electrical spin manipulation and quantum computing applications, recent significant attention has been devoted to semiconductor hole systems, which have very strong spin-orbit interactions. However, experimentally measuring, identifying, and quantifying spin-orbit coupling effects in transport, such as electrically-induced spin polarizations and spin-Hall currents, are challenging. Here we show that the magnetotransport properties of two dimensional (2D) hole systems display strong signatures of the spin-orbit interaction. Specifically, the low-magnetic field Hall coefficient and longitudinal conductivity contain a contribution that is second order in the spin-orbit interaction coefficient and is non-linear in the carrier number density. We propose an appropriate experimental setup to probe these spin-orbit dependent magnetotransport properties, which will permit one to extract the spin-orbit coefficient directly from the magnetotransport.
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We present magnetotransport calculations for homogeneous two-dimensional electron systems including the Rashba spin-orbit interaction, which mixes the spin-eigenstates and leads to a modified fan-chart with crossing Landau levels. The quantum mechanical Kubo formula is evaluated by taking into account spin-conserving scatterers in an extension of the self-consistent Born approximation that considers the spin degree of freedom. The calculated conductivity exhibits besides the well-known beating in the Shubnikov-de Haas (SdH) oscillations a modulation which is due to a suppression of scattering away from the crossing points of Landau levels and does not show up in the density of states. This modulation, surviving even at elevated temperatures when the SdH oscillations are damped out, could serve to identify spin-orbit coupling in magnetotransport experiments. Our magnetotransport calculations are extended also to lateral superlattices and predictions are made with respect to 1/B periodic oscillations in dependence on carrier density and strength of the spin-orbit coupling.
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $gamma$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $mathbf{kcdot p}$ tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.
Spin injection is a powerful experimental probe into a wealth of nonequilibrium spin-dependent phenomena displayed by materials with spin-orbit coupling (SOC). Here, we develop a theory of coupled spin-charge diffusive transport in two-dimensional spin-valve devices. The theory describes a realistic proximity-induced SOC with both spatially uniform and random components of the SOC due to adatoms and imperfections, and applies to the two dimensional electron gases found in two-dimensional materials and van der Walls heterostructures. The various charge-to-spin conversion mechanisms known to be present in diffusive metals, including the spin Hall effect and several mechanisms contributing current-induced spin polarization are accounted for. Our analysis shows that the dominant conversion mechanisms can be discerned by analyzing the nonlocal resistance of the spin-valve for different polarizations of the injected spins and as a function of the applied in-plane magnetic field.
Current-induced spin polarization (CISP) is rederived in ballistic spin-orbit-coupled electron systems, based on equilibrium statistical mechanics. A simple and useful picture is correspondingly proposed to help understand the CISP and predict the polarization direction. Nonequilibrium Landauer-Keldysh formalism is applied to demonstrate the validity of the statistical picture, taking the linear Rashba-Dresselhaus [001] two-dimensional system as a specific example. Spin densities induced by the CISP in semiconductor heterostructures and in metallic surface states are compared, showing that the CISP increases with the spin splitting strength and hence suggesting that the CISP should be more observable on metal and semimetal surfaces due to the discovered strong Rashba splitting. An application of the CISP designed to generate a spin-Hall pattern in the inplane, instead of the out-of-plane, component is also proposed.
We study exciton-polaritons in a two-dimensional Lieb lattice of micropillars. The energy spectrum of the system features two flat bands formed from $S$ and $P_{x,y}$ photonic orbitals, into which we trigger bosonic condensation under high power excitation. The symmetry of the orbital wave functions combined with photonic spin-orbit coupling gives rise to emission patterns with pseudospin texture in the flat band condensates. Our work shows the potential of polariton lattices for emulating flat band Hamiltonians with spin-orbit coupling, orbital degrees of freedom and interactions.
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