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Register a new userA Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells
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Among the n-type metal oxide materials used in the planar perovskite solar cells, zinc oxide (ZnO) is a promising candidate to replace titanium dioxide (TiO2) due to its relatively high electron mobility, high transparency, and versatile nanostructures. Here, we present the application of low temperature solution processed ZnO/Al-doped ZnO (AZO) bilayer thin film as electron transport layers (ETLs) in the inverted perovskite solar cells, which provide a stair-case band profile. Experimental results revealed that the power conversion efficiency (PCE) of perovskite solar cells were significantly increased from 12.25 to 16.07% by employing the AZO thin film as the buffer layer. Meanwhile, the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) were improved to 20.58 mA/cm2, 1.09V, and 71.6%, respectively. The enhancement in performance is attributed to the modified interface in ETL with stair-case band alignment of ZnO/AZO/CH3NH3PbI3, which allows more efficient extraction of photogenerated electrons in the CH3NH3PbI3 active layer. Thus, it is demonstrated that the ZnO/AZO bilayer ETLs would benefit the electron extraction and contribute in enhancing the performance of perovskite solar cells.
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Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the quasi-Fermi level splitting (QFLS) of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination current for a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V_OC by inducing an additional non-radiative recombination current that is significantly larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V_OC of the device. The results also show that the V_OC equals the internal QFLS in the absorber layer of (pin, nip) cells with selective CTLs and power conversion efficiencies of up to 21.4%. However, in case of less selective CTLs, the V_OC is substantially lower than the QFLS which indicates additional losses at the contacts and/or interfaces. The findings are corroborated by rigorous device simulations which outline several important considerations to maximize the V_OC. This work shows that the real challenge to supress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in the suppression of carrier recombination at the perovskite/CTL interfaces.
Due to the photo-instability and hysteresis of TiO$_2$ electron transport layer (ETL) in perovskite solar cells (PSCs), novel electron transport materials are highly demanded. Here, we show ideal band alignment between La-doped BaSnO$_3$ (LBSO) and methyl ammonium (MA) lead iodide perovskite (MAPbI$_3$). The CH$_3$NH$_3$PbI$_3$/La$_x$Ba$_{(1-x)}$SnO$_3$ interface forms a stable all-perovskite heterostructure. The selective band alignment is manipulated with band gap renormalization by La-doping on the Ba site. LBSO shows high mobility, photo-stability, and structural stability, promising the next generation ETL materials.
Increasing evidence suggests that the presence of mobile ions in perovskite solar cells can cause a current-voltage curve hysteresis. Steady state and transient current-voltage characteristics of a planar metal halide CH$_3$NH$_3$PbI$_3$ perovskite solar cell are analysed with a drift-diffusion model that accounts for both charge transport and ion vacancy motion. The high ion vacancy density within the perovskite layer gives rise to narrow Debye layers (typical width $sim$2nm), adjacent to the interfaces with the transport layers, over which large drops in the electric potential occur and in which significant charge is stored. Large disparities between (I) the width of the Debye layers and that of the perovskite layer ($sim$600nm) and (II) the ion vacancy density and the charge carrier densities motivate an asymptotic approach to solving the model, while the stiffness of the equations renders standard solution methods unreliable. We derive a simplified surface polarisation model in which the slow ion dynamic are replaced by interfacial (nonlinear) capacitances at the perovskite interfaces. Favourable comparison is made between the results of the asymptotic approach and numerical solutions for a realistic cell over a wide range of operating conditions of practical interest.
Herein, we report on the synthesis and investigation of two triazino-isoquinoline tetrafluoroborate electrolytes as hole-blocking layers in methylammonium triiodide perovskite photovoltaic devices with fullerene electron extraction layer. We find that increasing the thickness of the dipolar hole-blocking layer results in a gradual increase in the open-circuit voltage suggesting that aggregation of the molecules can enhance the dipole induced by the layer. This finding is confirmed by theoretical calculations demonstrating that while both molecules exhibit a similar dipole moment in their isolated state, this dipole is significantly enhanced when they aggregate. Ultra-violet photoemission spectroscopy measurements show that both derivatives exhibit a high ionisation potential of 7 eV, in agreement with their effective hole-blocking nature demonstrated by the devices. However, each of the molecules shows a different electron affinity due to the increased conjugation of one of the derivatives. While the change in electron transport level between the two derivatives is as high as 0.3 eV, the difference in the open-circuit voltage of both types of devices is negligible, suggesting that the electron transport level plays only a minor role in determining the open-circuit voltage of the device. Numerical device simulations confirm that the increase in built-in potential, arising from the high dipole of the electrolyte layer, compensates for the non-ideal energetic alignment of the charge transport levels, resulting in high VOC for a range of electron transport levels. Our study demonstrates that the application of small molecule electrolytes as hole-blocking layer in inverted architecture perovskite solar cells is a powerful tool to enhance the open-circuit voltage of the devices and provides useful guidelines for designing future generations of such compounds.
The Shockley and Queisser limit, a well-known efficiency limit for a solar cell, is based on unrealistic physical assumptions and its maximum limit is seriously overestimated. To understand the power loss mechanisms of record-efficiency cells, a more rigorous approach is necessary. Here, we have established a new formalism that can accurately predict absolute performance limits of solar cells in conventional thin film form. In particular, we have estimated the maximum efficiencies of 13 well-studied solar cell materials [GaAs, InP, CdTe, a-Si:H, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4, Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physical limit. Our calculation shows that over 30% efficiencies can be achieved for absorber layers with sharp absorption edges (GaAs, InP, CdTe, CuInGaSe2, Cu2ZnGeSe4). Nevertheless, many record-efficiency polycrystalline solar cells, including hybrid perovskites, are limited by open-circuit voltage and fill-factor losses. We show that the maximum conversion efficiencies described here present new alternative limits that can predict the power generation of real-world solar cells.
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