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Register a new userToward Microphononic Circuits on Chip: An Evaluation of Components based on High-Contrast Evanescent Confinement of Acoustic Waves
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We investigate the prospects for micron-scale acoustic wave components and circuits on chip in solid planar structures that do not require suspension. We leverage evanescent guiding of acoustic waves by high slowness contrast materials readily available in silicon complementary metal-oxide semiconductor (CMOS) processes. High slowness contrast provides strong confinement of GHz frequency acoustic fields in micron-scale structures. We address the fundamental implications of intrinsic material and radiation losses on operating frequency, bandwidth, device size and as a result practicality of multi-element microphononic circuits based on solid embedded waveguides. We show that a family of acoustic components based on evanescently guided acoustic waves, including waveguide bends, evanescent couplers, Y-splitters, and acoustic-wave microring resonators, can be realized in compact, micron-scale structures, and provide basic scaling and performance arguments for these components based on material properties and simulations. We further find that wave propagation losses are expected to permit high quality factor (Q), narrowband resonators and propagation lengths allowing delay lines and the coupling or cascading of multiple components to form functional circuits, of potential utility in guided acoustic signal processing on chip. We also address and simulate bends and radiation loss, providing insight into routing and resonators. Such circuits could be monolithically integrated with electronic and photonic circuits on a single chip with expanded capabilities.
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We numerically model key building blocks of a phononic integrated circuit that enable phonon routing in high-acoustic-index waveguides. Our particular focus is on Gallium Nitride-on-sapphire phononic platform which has recently demonstrated high acoustic confinement in its top layer without the use of suspended structures. We start with systematic simulation of various transverse phonon modes supported in strip waveguides and ring resonators with sub-wavelength cross-section. Mode confinement and quality factors of phonon modes are numerically investigated with respect to geometric parameters. Quality factor up to $10^{8}$ is predicted in optimized ring resonators. We next study the design of the phononic directional couplers, and present key design parameters for achieving strong evanescent couplings between modes propagating in parallel waveguides. Last, interdigitated transducer electrodes are included in the simulation for direct excitation of a ring resonator and critical coupling between microwave input and phononic dissipation. Our work provides comprehensive numerical characterization of phonon modes and functional phononic components in high-acoustic-index phononic circuits, which supplements previous theories and contributes to the emerging field of phononic integrated circuits.
Nanomechanical circuits for transverse acoustic waves promise to enable new approaches to computing, precision biochemical sensing and many other applications. However, progress is hampered by the lack of precise control of the coupling between nanomechanical elements. Here, we demonstrate virtual-phonon coupling between transverse mechanical elements, exploiting tunnelling through a zero-mode acoustic barrier. This allows the construction of large-scale nanomechanical circuits on a silicon chip, for which we develop a new scalable fabrication technique. As example applications, we build mode-selective acoustic mirrors with controllable reflectivity and demonstrate acoustic spatial mode filtering. Our work paves the way towards applications such as fully nanomechanical computer processors and distributed nanomechanical sensors, and to explore the rich landscape of nonlinear nanomechanical dynamics.
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On-chip optical resonators have the promise of revolutionizing numerous fields including metrology and sensing; however, their optical losses have always lagged behind their larger discrete resonator counterparts based on crystalline materials and flowable glass. Silicon nitride (Si3N4) ring resonators open up capabilities for optical routing, frequency comb generation, optical clocks and high precision sensing on an integrated platform. However, simultaneously achieving high quality factor and high confinement in Si3N4 (critical for nonlinear processes for example) remains a challenge. Here, we show that addressing surface roughness enables us to overcome the loss limitations and achieve high-confinement, on-chip ring resonators with a quality factor (Q) of 37 million for a ring with 2.5 {mu}m width and 67 million for a ring with 10 {mu}m width. We show a clear systematic path for achieving these high quality factors. Furthermore, we extract the loss limited by the material absorption in our films to be 0.13 dB/m, which corresponds to an absorption limited Q of at least 170 million by comparing two resonators with different degrees of confinement. Our work provides a chip-scale platform for applications such as ultra-low power frequency comb generation, high precision sensing, laser stabilization and sideband resolved optomechanics.
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