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Register a new userTitanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells
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One of the remaining obstacles to approaching the theoretical efficiency limit of crystalline silicon (c-Si) solar cells is the exceedingly high interface recombination loss for minority carriers at the Ohmic contacts. In ultra-thin-film c-Si solar cells, this contact recombination loss is far more severe than for traditional thick cells due to the smaller volume and higher minority carrier concentration of the former. This paper presents a novel design of an electron passing (Ohmic) contact to n-type Si that is hole-blocking with significantly reduced hole recombination. This contact is formed by depositing a thin titanium dioxide (TiO2) layer to form a silicon metal-insulator-semiconductor (MIS) contact. A 2 {mu}m thick Si cell with this TiO2 MIS contact achieved an open circuit voltage (Voc) of 645 mV, which is 10 mV higher than that of an ultra-thin cell with a metal contact. This MIS contact demonstrates a new path for ultra-thin-film c-Si solar cells to achieve high efficiencies as high as traditional thick cells, and enables the fabrication of high-efficiency c-Si solar cells at a lower cost.
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A coupled optoelectronic model was implemented along with the differential evolution algorithm to assess the efficacy of grading the bandgap of the CZTSSe layer for enhancing the power conversion efficiency of thin-film CZTSSe solar cells. Both linearly and sinusoidally graded bandgaps were examined, with the molybdenum backreflector in the solar cell being either planar or periodically corrugated. Whereas an optimally graded bandgap can dramatically enhance the efficiency, the effect of periodically corrugating the backreflector is modest at best. An efficiency of 21.74% is predicted with sinusoidal grading of a 870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achieved experimentally with a 2200-nm-thick homogeneous CZTSSe layer. High electron-hole-pair generation rates in the narrow-bandgap regions and a high open-circuit voltage due to a wider bandgap close to the front and rear faces of the CZTSSe layer are responsible for the high enhancement of efficiency.
Engineering the energetics of perovskite photovoltaic devices through the deliberate introduction of dipoles to control the built-in potential of the devices offers the opportunity to enhance their performance without the need to modify the active layer itself. In this work, we demonstrate how the incorporation of molecular dipoles into the bathocuproine (BCP) hole-blocking layer of inverted perovskite solar cells improves the device open-circuit voltage (VOC) and consequently, its performance. We explore a series of four thiaazulenic derivatives that exhibit increasing dipole moments and demonstrate that these molecules can be introduced into the solution-processed BCP layer to effectively increase the built-in potential within the device, without altering any of the other device layers. As a result the VOC of the devices is enhanced by up to 130 mV with larger dipoles resulting in higher VOCs. To investigate the limitations of this approach, we employ numerical device simulations that demonstrate that the highest dipole derivatives used in this work eliminate all limitations on the VOC stemming from the built-in potential of the device.
An optoelectronic optimization was carried out for an AlGaAs solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap {is predicted to enhance} the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.
We report on very high enhancement of thin layers absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show through simulation that an increase of the absorption by a factor of 1.5 is expected for a film of aSi. The proposal is then validated by an experimental demonstration, showing an important increase of the absorption of a layer of aSi over a spectral range of 0.32-0.76 microns.
Herein, we report on the synthesis and investigation of two triazino-isoquinoline tetrafluoroborate electrolytes as hole-blocking layers in methylammonium triiodide perovskite photovoltaic devices with fullerene electron extraction layer. We find that increasing the thickness of the dipolar hole-blocking layer results in a gradual increase in the open-circuit voltage suggesting that aggregation of the molecules can enhance the dipole induced by the layer. This finding is confirmed by theoretical calculations demonstrating that while both molecules exhibit a similar dipole moment in their isolated state, this dipole is significantly enhanced when they aggregate. Ultra-violet photoemission spectroscopy measurements show that both derivatives exhibit a high ionisation potential of 7 eV, in agreement with their effective hole-blocking nature demonstrated by the devices. However, each of the molecules shows a different electron affinity due to the increased conjugation of one of the derivatives. While the change in electron transport level between the two derivatives is as high as 0.3 eV, the difference in the open-circuit voltage of both types of devices is negligible, suggesting that the electron transport level plays only a minor role in determining the open-circuit voltage of the device. Numerical device simulations confirm that the increase in built-in potential, arising from the high dipole of the electrolyte layer, compensates for the non-ideal energetic alignment of the charge transport levels, resulting in high VOC for a range of electron transport levels. Our study demonstrates that the application of small molecule electrolytes as hole-blocking layer in inverted architecture perovskite solar cells is a powerful tool to enhance the open-circuit voltage of the devices and provides useful guidelines for designing future generations of such compounds.
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