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Register a new userRapid laser-induced photochemical conversion of sol-gel precursors to In2O3 layers and their application in thin-film transistors
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Added by
Demosthenes Koutsogeorgis
Publication date
2017
fields
Physics
and research's language is
English
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We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol-gel metal oxide precursor. Through careful optimization of the laser annealing conditions we demonstrated successful conversion of the precursor to In2O3 and its subsequent implementation in n-channel transistors with electron mobility up to 13 cm2/Vs. Importantly, the process does not require thermal annealing making it compatible with temperature sensitive materials such as plastic. On the other hand, the spatial conversion/densification of the sol-gel layer eliminates additional process steps associated with semiconductor patterning and hence significantly reduces fabrication complexity and cost. Our work demonstrates unambiguously that laser-induced photochemical conversion of sol-gel metal oxide precursors can be rapid and compatible with large-area electronics manufacturing.
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In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controllable thickness of In2O3 at atomic scale enables the design of sufficient 2D carrier density in the In2O3 channel integrated with the conventional dielectric. The threshold voltage and channel carrier density are found to be considerably tuned by channel thickness. Such phenomenon is understood by the trap neutral level (TNL) model where the Fermi-level tends to align deeply inside the conduction band of In2O3 and can be modulated to the bandgap in atomic layer thin In2O3 due to quantum confinement effect, which is confirmed by density function theory (DFT) calculation. The demonstration of enhancement-mode amorphous In2O3 transistors suggests In2O3 is a competitive channel material for back-end-of-line (BEOL) compatible transistors and monolithic 3D integration applications.
High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films annealed at various temperatures. By means of X-ray photoelectron spectroscopy and absorption spectrum, it is found that the conduction-band-minimum shifts downward and the valence-band-maximum shifts upward with the increase of annealing temperature, leading to the narrowed band gap. Electrical resistance measurements confirmed a semiconductor-like behavior for all the thin films. Two charge transport mechanisms, i.e., the thermally-activated transport mechanism at high temperatures and the activation-less transport mechanism at low temperatures, are identified by a self-consistent analysis method. These findings provide a critical insight into the electronic band structure and charge transport behavior of Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, validating it as a compelling high-entropy oxide material for future electronic/energy-related technologies.
Sol-gel transition of carboxylated cellulose nanocrystals is investigated using rheology, SAXS, NMR and optical spectroscopies to unveil the distinctive roles of ultrasounds treatment and ions addition. Besides cellulose fibers fragmentation, sonication treatment induces fast gelling of the solution. Gelation is induced independently on the addition of cations, while the final rheological properties are highly influenced by the type, the concentration as well as on the sequence of the operations since salts must be added before sonication to produce stiff gels. Cations with various charge and dimension have been associated to ultrasounds to induce gelation and the gel elastic modulus increase proportionally with the charge over the ion size ratio. SAXS analysis of the Na+ hydrogel and Ca2+ hydrogel to which the ion was added after sonication shows the presence of structurally ordered domains where water is confined as indicated by 1H-NMR investigation of the dynamic of water exchange in the hydrogels. Conversely, separated phases containing essentially free water, characterize the hydrogels obtained by sonication after Ca2+ addition, confirming that this ion induces irreversible fiber aggregation. The rheological properties of the hydrogels depend on the duration of the ultrasound treatment and it enables the design of materials programmed with tailored energy dissipation response.
The evolution of viscoelastic properties near the sol-gel transition is studied by performing oscillatory rheological measurements on two different types of systems: a colloidal dispersion and a thermo-responsive polymer solution under isothermal and non-isothermal conditions. While undergoing sol-gel transition, both the systems pass through a critical point. An approach to the critical point is characterized in terms of divergence of zero shear viscosity and the subsequent appearance of the low frequency modulus. In the vicinity of the critical gel state, both the viscosity and the modulus show a power-law dependence on relative distance from the critical point. Interestingly, the longest relaxation time has been observed to diverge symmetrically on both the sides of the critical point and also shows a power-law dependence on relative distance from the critical point. The critical (power-law) exponents of the zero-shear viscosity and modulus are observed to be related to the exponents of the longest relaxation time by the hyper scaling laws. The dynamic critical exponent has also been calculated from the growth of the dynamic moduli. Remarkably, the critical relaxation exponent and dynamic critical exponent predicted from the scaling laws precisely agree with the experimental values from the isothermal as well as non-isothermal experiments. The associated critical exponents show remarkable internal consistency and universality for different kinds of systems undergoing the sol-gel transition.
In this work, we show that the application of a sol-gel coating renders a microbubble whispering gallery resonator into an active device. During the fabrication of the resonator, a thin layer of erbium-doped sol-gel is applied to a tapered microcapillary, then a microbubble with a wall thickness of 1.3 $mu$m is formed with the rare earth diffused into its walls. The doped microbubble is pumped at 980 nm and lasing in the emission band of the Er$^{3+}$ ions with a wavelength of 1535 nm is observed. The laser wavelength can be tuned by aerostatic pressure tuning of the whispering gallery modes of the microbubble. Up to 240 pm tuning is observed with 2 bar of applied pressure. It is shown that the doped microbubble could be used as a compact, tunable laser source. The lasing microbubble can also be used to improve sensing capabilities in optofluidic sensing applications.
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