Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userTunable erbium-doped microbubble laser fabricated by sol-gel coating
116
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
In this work, we show that the application of a sol-gel coating renders a microbubble whispering gallery resonator into an active device. During the fabrication of the resonator, a thin layer of erbium-doped sol-gel is applied to a tapered microcapillary, then a microbubble with a wall thickness of 1.3 $mu$m is formed with the rare earth diffused into its walls. The doped microbubble is pumped at 980 nm and lasing in the emission band of the Er$^{3+}$ ions with a wavelength of 1535 nm is observed. The laser wavelength can be tuned by aerostatic pressure tuning of the whispering gallery modes of the microbubble. Up to 240 pm tuning is observed with 2 bar of applied pressure. It is shown that the doped microbubble could be used as a compact, tunable laser source. The lasing microbubble can also be used to improve sensing capabilities in optofluidic sensing applications.
rate research
Read More
For erbium-doped amorphous oxides, such as those that are used in compact lightwave devices interfaced with silicon, values of the refractive indices are commonly obtained empirically. This work, combining experimental and theoretical studies, examines silica as the exemplary host and the influence of erbium doping on the refractive index. Analysis of data is presented for the spectral refractive index in the ultraviolet to near infrared wavelength range of heavily erbium-doped silica thin films prepared by spin coating a sol-gel precursor on silicon and subsequent vacuum annealing. Effective medium Lorentz-Lorenz data analysis determines that the dopant component has a refractive index of 1.76(0.24) with wavelength dispersion constrained to within 2 percent. Considering the dopant as a localized ErO6 impurity complex, a corresponding theoretical refractive index of 1.662 is derived by calculating the optical polarizability and volume of the impurity. Data presented for room-temperature (293 K) photoluminescence in the vicinity of 1.54 micron are shown to be consistent with random variability in impurity sites. Inherent advantages of studying colloid-based materials are discussed. To the best of the authors knowledge, such a detailed study of the refractive index associated with erbium impurities in silica is being reported for the first time in the literature.
The commercialization of lithium niobate on insulator (LNOI) wafer has sparked significant on-chip photonic integration application due to its remarkable photonic, photoacoustic, electro-optic and piezoelectric nature. A variety of on-chip LNOI-based optical devices with high performance has been realized in recent years. Here we developed 1 mol% erbium-doped LN crystal and its LNOI wafer, and fabricated an erbium-doped LNOI microdisk with high quality ($ sim $ 1.05$times 10^{^5}$ ). C-band laser emission with $ sim $1530 nm and $ sim $1560 nm from the high-Q erbium-doped LNOI microdisk was demonstrated both with 974 nm and 1460 nm pumping, and the latter has better thermal stability. This microlaser would play an important role in the photonic integrated circuits of lithium niobate platform.
The erbium-doped Lithium niobate on insulator (Er:LNOI) platform has great promise in the application of telecommunication, microwave photonics, and quantum photonics due to its excellent electro-optic, piezo-electric, nonlinear nature as well as the gain characteristics in the telecommunication C-band. Here, we report a single-frequency Er:LNOI integrated laser based on dual-cavity structure. Facilitated by the Vernier effect and gain competition, the single-frequency laser can operate stably at 1531-nm wavelength with a 1484-nm pump laser. The output laser has a power of 0.31 uW, a linewidth of 1.2 MHz, and a side mode suppression ratio (SMSR) of 31 dB. Our work allows the direct integration of this laser source with existing LNOI components and paves the way for a fully integrated LNOI system.
An erbium doped micro-laser is demonstrated utilizing $mathrm{SiO_{2}}$ microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering gallery type (WGM) modes with intrinsic optical quality factors of up to $6times{10^{7}}$ and were doped with trivalent erbium ions (peak concentration $mathrm{sim3.8times{10^{20}cm^{-3})}}$ using MeV ion implantation. Coupling to the fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber. Upon pumping of the $^{4}% I_{15/2}longrightarrow$ $^{4}I_{13/2}$ erbium transition at 1450 nm, a gradual transition from spontaneous to stimulated emission was observed in the 1550 nm band. Analysis of the pump-output power relation yielded a pump threshold of 43 $mathrm{mu}$W and allowed measuring the spontaneous emission coupling factor: $betaapprox1times10^{-3}$.
Erbium-doped lithium niobate on insulator (Er:LNOI) is a promising platform for photonic integrated circuits as it adds gain to the LNOI system and enables on-chip lasers and amplifiers. A challenge for Er:LNOI laser is to increase its output power while maintaining single-frequency and single (-transverse)-mode operation. In this work, we demonstrate that single-frequency and single-mode operation can be achieved even in a single multi-mode Er:LNOI microring by introducing mode-dependent loss and gain competition. In a single microring with a free spectral range of 192 GHz, we have achieved single-mode lasing with an output power of 2.1 microwatt, a side-mode suppression of 35.5 dB, and a linewidth of 1.27 MHz.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
