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Register a new userThermal shift of the resonance between an electron gas and quantum dots: What is the origin?
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The operation of quantum dots at highest possible temperatures is desirable for many applications. Capacitance-voltage spectroscopy (C(V)-spectroscopy) measurements are an established instrument to analyze the electronic structure and energy levels of self-assembled quantum dots (QDs). We perform C(V) in the dark and C(V) under the influence of non-resonant illumination, probing exciton states up to $X^{4+}$ on InAs QDs embedded in a GaAs matrix for temperatures ranging from 2.5 K to 120 K. While a small shift in the charging spectra resonance is observed for the two pure spin degenerate electron s-state charging voltages with increasing temperature, a huge shift is visible for the electron-hole excitonic states resonance voltages. The $s_2$-peak moves to slightly higher, the $s_1$-peak to slightly lower charging voltages. In contrast, the excitonic states are surprisingly charged at much lower voltages upon increasing temperature. We derive a rate-model allowing to attribute and value different contributions to these shifts. Resonant tunnelling, state degeneracy and hole generation rate in combination with the Fermi distribution function turn out to be of great importance for the observed effects. The differences in the shifting behavior is connected to different equilibria schemes for the peaks; s-peaks arise when tunneling-in- and out-rates become equal, while excitonic peaks occur, when electron tunneling-in- and hole-generation rates are balanced.
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A description of spin Faraday rotation, Kerr rotation and ellipticity signals for single- and multi-layer ensembles of singly charged quantum dots (QDs) is developed. The microscopic theory considers both the single pump-pulse excitation and the effect of a train of such pulses, which in the case of long resident-electron spin coherence time leads to a stationary distribution of the electron spin polarization. The calculations performed for single-color and two-color pump-probe setups show that the three experimental techniques: Faraday rotation, Kerr rotation and ellipticity measurements provide complementary information about an inhomogeneous ensemble of QDs. The microscopic theory developed for a three-dimensional ensemble of QDs is shown to agree with the phenomenological description of these effects. The typical time-dependent traces of pump-probe Faraday rotation, Kerr rotation and ellipticity signals are calculated for various experimental conditions.
Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent studies by angle-resolved photoemission spectroscopy have demonstrated that a conventional two-dimensional electron gas can coexist with the topological surface state due to the quantum confinement effect. The coexistence is expected to give rise to exotic transport properties, which, however, have not been explored so far. Here, we report a magneto-transport study on single crystals of the topological insulator BiSbTe3. Besides Shubnikov-de Haas oscillations and weak anti-localization (WAL) from the topological surface state, we also observed a crossover from the weak anti-localization to weak localization (WL) with increasing magnetic field, which is temperature dependent and exhibits two-dimensional features. The crossover is proposed to be the transport manifestation of the coexistence of the topological surface state and two-dimensional electron gas on the surface of TIs.
Photo-luminescence intermittency (blinking) in semiconductor nanocrystals (NCs), a phenomenon ubiquitous to single-emitters, is generally considered to be temporally random intensity fluctuations between bright (On) and dark (Off) states. However, individual quantum-dots (QDs) rarely exhibit such telegraphic signal, and yet, the vast majority of single-NC blinking data are analyzed using a single fixed threshold, which generates binary trajectories. Further, blinking dynamics can vary dramatically over NCs in the ensemble, and it is unclear whether the exponents (m) of single-particle On-/Off-time distributions (P(t)-On/Off), which are used to validate mechanistic models of blinking, are narrowly distributed or not. Here, we sub-classify an ensemble based on the emissivity of QDs, and subsequently compare the (sub)ensemble behaviors. To achieve this, we analyzed a large number (>1000) of intensity trajectories for a model system, Mn+2 doped ZnCdS QDs, which exhibits diverse blinking dynamics. An intensity histogram dependent thresholding method allowed us to construct distributions of relevant blinking parameters (such as m). Interestingly, we find that single QD P(t)-On/Off s follow either truncated power law or power law, and their relative proportion vary over sub-populations. Our results reveal a remarkable variation in m(On/Off) amongst as well as within sub-ensembles, which implies multiple blinking mechanisms being operational among various QDs. We further show that the m(On/Off) obtained via cumulative single-particle P(t)-On/Off is clearly distinct from the weighted mean value of all single-particle m(On/Off), an evidence for the lack of ergodicity. Thus, investigation and analyses of a large number of QDs, albeit for a limited time-span of few decades, is crucial to characterize possible blinking mechanisms and heterogeneity therein
Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Land{e} g-factor, and small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological superconductivity. However, there exist limited studies of quantum confined systems in these 2DEGs, often attributed to charge instabilities and gate drifts. We overcome this by removing the $delta$-doping layer from the heterostructure, and induce carriers electrostatically. This allows us to perform the first detailed study of stable gate-defined quantum dots in InSb 2DEGs. We demonstrate two distinct strategies for carrier confinement and study the charge stability of the dots. The small effective mass results in a relatively large single particle spacing, allowing for the observation of an even-odd variation in the addition energy. By tracking the Coulomb oscillations in a parallel magnetic field we determine the ground state spin configuration and show that the large g-factor ($sim$30) results in a singlet-triplet transition at magnetic fields as low as 0.3 T.
Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the few-electron regime, where we observe a clear Kondo effect and singlet-triplet spin blockade. We measure an electronic $g$-factor of $16$ and a typical magnitude of the random hyperfine fields on the dots of $sim 0.6, mathrm{mT}$. We estimate the spin-orbit length in the system to be $sim 5-10, mu mathrm{m}$, which is almost two orders of magnitude longer than typically measured in InAs nanostructures, achieved by a very symmetric design of the quantum well. These favorable properties put the InAs 2DEG on the map as a compelling host for studying fundamental aspects of spin qubits. Furthermore, having weak spin-orbit coupling in a material with a large Rashba coefficient potentially opens up avenues for engineering structures with spin-orbit coupling that can be controlled locally in space and/or time.
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