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Register a new userRobust fractional quantum Hall states and continuous quantum phase transitions in a half-filled bilayer graphene Landau level
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Nonabelian anyons offer the prospect of storing quantum information in a topological qubit protected from decoherence, with the degree of protection determined by the energy gap separating the topological vacuum from its low lying excitations. Originally proposed to occur in quantum wells in high magnetic fields, experimental systems thought to harbor nonabelian anyons range from p-wave superfluids to superconducting systems with strong spin orbit coupling. However, all of these systems are characterized by small energy gaps, and despite several decades of experimental work, definitive evidence for nonabelian anyons remains elusive. Here, we report the observation of arobust, incompressible even-denominator fractional quantum Hall phase in a new generation of dual-gated, hexagonal boron nitride encapsulated bilayer graphene samples. Numerical simulations suggest that this state is in the Pfaffian phase and hosts nonabelian anyons, and the measured energy gaps are several times larger than those observed in other systems. Moreover, the unique electronic structure of bilayer graphene endows the electron system with two new control parameters. Magnetic field continuously tunes the effective electron interactions, changing the even-denominator gap non-monotonically and consistent with predictions that a transition between the Pfaffian phase and the composite Fermi liquid (CFL) occurs just beyond the experimentally explored magnetic field range. Electric field, meanwhile, tunes crossings between levels from different valleys. By directly measuring the valley polarization, we observe a continuous transition from an incompressible to a compressible phase at half-filling mediated by an unexpected incompressible, yet polarizable, intermediate phase. Valley conservation implies this phase is an electrical insulator with gapless neutral excitations.
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We consider a non-Abelian candidate state at filling factor $ u=3/7$ state belonging to the parton family. We find that, in the second Landau level of GaAs (i.e. at filling factor $ u=2+3/7$), this state is energetically superior to the standard Jain composite-fermion state and also provides a very good representation of the ground state found in exact diagonalization studies of finite systems. This leads us to predict that emph{if} a fractional quantum Hall effect is observed at $ u=3/7$ in the second Landau level, it is likely to be described by this new non-Abelian state. We enumerate experimentally measurable properties that can verify the topological structure of this state.
A formalism is presented for treating strongly-correlated graphene quantum Hall states in terms of an SO(8) fermion dynamical symmetry that includes pairing as well as particle--hole generators. The graphene SO(8) algebra is isomorphic to an SO(8) algebra that has found broad application in nuclear physics, albeit with physically very different generators, and exhibits a strong formal similarity to SU(4) symmetries that have been proposed to describe high-temperature superconductors. The well-known SU(4) symmetry of quantum Hall ferromagnetism for single-layer graphene is recovered as one subgroup of SO(8), but the dynamical symmetry structure associated with the full set of SO(8) subgroup chains extends quantum Hall ferromagnetism and allows analytical many-body solutions for a rich set of collective states exhibiting spontaneously-broken symmetry that may be important for the low-energy physics of graphene in strong magnetic fields. The SO(8) symmetry permits a natural definition of generalized coherent states that correspond to symmetry-constrained Hartree--Fock--Bogoliubov solutions, or equivalently a microscopically-derived Ginzburg--Landau formalism, exhibiting the interplay between competing spontaneously broken symmetries in determining the ground state.
Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ u=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarised Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.
We derive the exact insulator ground states of the projected Hamiltonian of magic-angle twisted bilayer graphene (TBG) flat bands with Coulomb interactions in various limits, and study the perturbations away from these limits. We define the (first) chiral limit where the AA stacking hopping is zero, and a flat limit with exactly flat bands. In the chiral-flat limit, the TBG Hamiltonian has a U(4)$times$U(4) symmetry, and we find that the exact ground states at integer filling $-4le ule 4$ relative to charge neutrality are Chern insulators of Chern numbers $ u_C=4-| u|,2-| u|,cdots,| u|-4$, all of which are degenerate. This confirms recent experiments where Chern insulators are found to be competitive low-energy states of TBG. When the chiral-flat limit is reduced to the nonchiral-flat limit which has a U(4) symmetry, we find $ u=0,pm2$ has exact ground states of Chern number $0$, while $ u=pm1,pm3$ has perturbative ground states of Chern number $ u_C=pm1$, which are U(4) ferromagnetic. In the chiral-nonflat limit with a different U(4) symmetry, different Chern number states are degenerate up to second order perturbations. In the realistic nonchiral-nonflat case, we find that the perturbative insulator states with Chern number $ u_C=0$ ($0<| u_C|<4-| u|$) at integer fillings $ u$ are fully (partially) intervalley coherent, while the insulator states with Chern number $| u_C|=4-| u|$ are valley polarized. However, for $0<| u_C|le4-| u|$, the fully intervalley coherent states are highly competitive (0.005meV/electron higher). At nonzero magnetic field $|B|>0$, a first-order phase transition for $ u=pm1,pm2$ from Chern number $ u_C=text{sgn}( u B)(2-| u|)$ to $ u_C=text{sgn}( u B)(4-| u|)$ is expected, which agrees with recent experimental observations. Lastly, the TBG Hamiltonian reduces into an extended Hubbard model in the stabilizer code limit.
We study the nature of the u=5/2 quantum Hall state in wide quantum wells under the mixing of electronic subbands and Landau levels. We introduce a general method to analyze the Moore-Read Pfaffian state and its particle-hole conjugate, the anti-Pfaffian, under periodic boundary conditions in a quartered Brillouin zone scheme containing both even and odd numbers of electrons. We examine the rotational quantum numbers on the torus, and show spontaneous breaking of the particle-hole symmetry can be observed in finite-size systems. In the presence of electronic-subband and Landau-level mixing the particle-hole symmetry is broken in such a way that the anti-Pfaffian is unambiguously favored, and becomes more robust in the vicinity of a transition to the compressible phase, in agreement with recent experiments.
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