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Register a new userNonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers
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We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer (HEB-) mixers, using concepts of nonequilibrium superconductivity. Through this we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device.
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We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product q_Tl(q_T is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14-30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/tau_{e-ph} sim T^n with the exponents n = 3.2-3.8. We found that in this temperature range tau_{e-ph} and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9-17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.
Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such technologies is to understand the requirements for, and control the production of, superconducting nanowires that undergo coherent quantum phase-slips. We present three fabrication technologies, based on using electron-beam lithography or neon focussed ion-beam lithography, for defining narrow superconducting nanowires, and have used these to create nanowires in niobium nitride with widths in the range of 20-250 nm. We present characterisation of the nanowires using DC electrical transport at temperatures down to 300 mK. We demonstrate that a range of different behaviours may be obtained in different nanowires, including bulk-like superconducting properties with critical-current features, the observation of phase-slip centres and the observation of zero conductance below a critical voltage, characteristic of coherent quantum phase-slips. We observe critical voltages up to 5 mV, an order of magnitude larger than other reports to date. The different prominence of quantum phase-slip effects in the various nanowires may be understood as arising from the differing importance of quantum fluctuations. Control of the nanowire properties will pave the way for routine fabrication of coherent quantum phase-slip nanowire devices for technology applications.
We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses we determine the absolute optical power absorbed by the NbN film and, via a resistive superconductor thermometry, the thermal resistance Z(T) of the NbN film in dependence of temperature. In principle, this approach permits a simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous for their similar temperature dependencies. We analyze the Z(T) within the two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
The origin and the evolution of the universe are concealed in the evanescent diffuse extragalactic background radiation (DEBRA). To reveal these signals, the development of innovative ultra-sensitive bolometers operating in the gigahertz band is required. Here, we review the design and experimental realization of two bias-current-tunable sensors based on one dimensional fully superconducting Josephson junctions: the nanoscale transition edge sensor (nano-TES) and the Josephson escape sensor (JES). In particular, we cover the theoretical basis of the sensors operation, the device fabrication, their experimental electronic and thermal characterization, and the deduced detection performance. Indeed, the nano-TES promises a state-of-the-art noise equivalent power (NEP) of about $5 times 10^{-20}$ W$/sqrt{text{Hz}}$, while the JES is expected to show an unprecedented NEP of the order of $10^{-25}$ W$/sqrt{text{Hz}}$. Therefore, the nano-TES and JES are strong candidates to push radio astronomy to the next level.
We have found experimentally that the rise times of voltage pulses in NbN superconducting single photon detectors increase nonlinearly with increasing detector length. We fabricated superconducting single photon detectors based on NbN thin films with a meander-like sensitive region of area from 2x2um2 to 11x11um2. The effect is connected with the dependence of the detector resistance, which appears after photon absorption, on its kinetic inductance and hence on detector length. This conclusion is confirmed by our calculations in the framework of the two-temperature model.
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