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Register a new userOptimizing floating guard ring designs for FASPAX N-in-P silicon sensors
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FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intended $mbox{13 $MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $10^{text{5}}$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.
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The standard technique to electrically isolate the $n^+$ implants of segmented silicon sensors fabricated on high-ohmic $p$-type silicon are $p^+$-implants. Although the knowledge of the $p^+$-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a $p^+$-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with $approx 3.5 times 10^{12}$ cm$^{-2}$ of boron and $langle 1 0 0 , rangle$ crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between $3.5 times 10^{12}$ cm$^{-3}$ and $2 times 10^{15}$ cm$^{-3}$ for the MOSFET with $p^+$-implant, is determined down to a distance of a fraction of a $mu $m from the Si-SiO$_2$ interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed.
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
Silicon based micropattern detectors are essential elements of modern high energy physics experiments. Cost effectiveness and high radiation resistance are two important requirements for technologies to be used in inner tracking devices. Processes based on p-type substrates have very strong appeal for these applications. Recent results and prototype efforts under way are reviewed.
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $mu$m, produced at CiS, and 100-200 $mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of $1.4times10^{16}n_{eq}/cm^{2}$.
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