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Register a new userNonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor
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Added by
Young Sun
Publication date
2016
fields
Informatics Engineering
and research's language is
English
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Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X1, X2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic 1), positive low (logic 0), or negative (logic 0), depending on the levels of X1 and X2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.
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The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient ({alpha}) of multiferroics. Because the states of {alpha} depends on the relative orientation between magnetization and polarization, one can reach different levels of {alpha} by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of {alpha} can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of {alpha} is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.
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