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Register a new userNonvolatile Spintronic Memory Cells for Neural Networks
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Added by
Andrew Stephan
Publication date
2019
fields
Informatics Engineering
and research's language is
English
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A new spintronic nonvolatile memory cell analogous to 1T DRAM with non-destructive read is proposed. The cells can be used as neural computing units. A dual-circuit neural network architecture is proposed to leverage these devices against the complex operations involved in convolutional networks. Simulations based on HSPICE and Matlab were performed to study the performance of this architecture when classifying images as well as the effect of varying the size and stability of the nanomagnets. The spintronic cells outperform a purely charge-based implementation of the same network, consuming about 100 pJ total per image processed.
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Neural networks span a wide range of applications of industrial and commercial significance. Binary neural networks (BNN) are particularly effective in trading accuracy for performance, energy efficiency or hardware/software complexity. Here, we introduce a spintronic, re-configurable in-memory BNN accelerator, PIMBALL: Processing In Memory BNN AcceL(L)erator, which allows for massively parallel and energy efficient computation. PIMBALL is capable of being used as a standard spintronic memory (STT-MRAM) array and a computational substrate simultaneously. We evaluate PIMBALL using multiple image classifiers and a genomics kernel. Our simulation results show that PIMBALL is more energy efficient than alternative CPU, GPU, and FPGA based implementations while delivering higher throughput.
Traditional neural networks require enormous amounts of data to build their complex mappings during a slow training procedure that hinders their abilities for relearning and adapting to new data. Memory-augmented neural networks enhance neural networks with an explicit memory to overcome these issues. Access to this explicit memory, however, occurs via soft read and write operations involving every individual memory entry, resulting in a bottleneck when implemented using the conventional von Neumann computer architecture. To overcome this bottleneck, we propose a robust architecture that employs a computational memory unit as the explicit memory performing analog in-memory computation on high-dimensional (HD) vectors, while closely matching 32-bit software-equivalent accuracy. This is achieved by a content-based attention mechanism that represents unrelated items in the computational memory with uncorrelated HD vectors, whose real-valued components can be readily approximated by binary, or bipolar components. Experimental results demonstrate the efficacy of our approach on few-shot image classification tasks on the Omniglot dataset using more than 256,000 phase-change memory devices. Our approach effectively merges the richness of deep neural network representations with HD computing that paves the way for robust vector-symbolic manipulations applicable in reasoning, fusion, and compression.
We study and analyze the fundamental aspects of noise propagation in recurrent as well as deep, multi-layer networks. The main focus of our study are neural networks in analogue hardware, yet the methodology provides insight for networks in general. The system under study consists of noisy linear nodes, and we investigate the signal-to-noise ratio at the networks outputs which is the upper limit to such a systems computing accuracy. We consider additive and multiplicative noise which can be purely local as well as correlated across populations of neurons. This covers the chief internal-perturbations of hardware networks and noise amplitudes were obtained from a physically implemented recurrent neural network and therefore correspond to a real-world system. Analytic solutions agree exceptionally well with numerical data, enabling clear identification of the most critical components and aspects for noise management. Focusing on linear nodes isolates the impact of network connections and allows us to derive strategies for mitigating noise. Our work is the starting point in addressing this aspect of analogue neural networks, and our results identify notoriously sensitive points while simultaneously highlighting the robustness of such computational systems.
One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow improving the energy efficiency of Artificial Intelligence by orders of magnitude with regards to its implementation on computers and graphics cards. In particular, ST-MRAM could be ideal for implementing Binarized Neural Networks (BNNs), a type of deep neural networks discovered in 2016, which can achieve state-of-the-art performance with a highly reduced memory footprint with regards to conventional artificial intelligence approaches. The challenge of ST-MRAM, however, is that it is prone to write errors and usually requires the use of error correction. In this work, we show that these bit errors can be tolerated by BNNs to an outstanding level, based on examples of image recognition tasks (MNIST, CIFAR-10 and ImageNet): bit error rates of ST-MRAM up to 0.1% have little impact on recognition accuracy. The requirements for ST-MRAM are therefore considerably relaxed for BNNs with regards to traditional applications. By consequence, we show that for BNNs, ST-MRAMs can be programmed with weak (low-energy) programming conditions, without error correcting codes. We show that this result can allow the use of low energy and low area ST-MRAM cells, and show that the energy savings at the system level can reach a factor two.
Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and resistance to device variations. However, the area occupation and standby leakage power of existing SRAMbased charge-domain CiM (CD-CiM) are high. This paper proposes the first concept and analysis of CD-CiM using nonvolatile memory (NVM) devices. The design implementation and performance evaluation are based on a proposed 2-transistor-1-capacitor (2T1C) CiM macro using ferroelectric field-effect-transistors (FeFETs), which is free from leakage power and much denser than the SRAM solution. With the supply voltage between 0.45V and 0.90V, operating frequency between 100MHz to 1.0GHz, binary neural network application simulations show over 47%, 60%, and 64% energy consumption reduction from existing SRAM-based CD-CiM, SRAM-based current-domain CiM, and RRAM-based current-domain CiM, respectively. For classifications in MNIST and CIFAR-10 data sets, the proposed FeFETbased CD-CiM achieves an accuracy over 95% and 80%, respectively.
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