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Microwave spectroscopy of spinful Andreev bound states in ballistic semiconductor Josephson junctions

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 Added by Attila Geresdi
 Publication date 2016
  fields Physics
and research's language is English




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The superconducting proximity effect in semiconductor nanowires has recently enabled the study of new superconducting architectures, such as gate-tunable superconducting qubits and multiterminal Josephson junctions. As opposed to their metallic counterparts, the electron density in semiconductor nanosystems is tunable by external electrostatic gates providing a highly scalable and in-situ variation of the device properties. In addition, semiconductors with large $g$-factor and spin-orbit coupling have been shown to give rise to exotic phenomena in superconductivity, such as $varphi_0$ Josephson junctions and the emergence of Majorana bound states. Here, we report microwave spectroscopy measurements that directly reveal the presence of Andreev bound states (ABS) in ballistic semiconductor channels. We show that the measured ABS spectra are the result of transport channels with gate-tunable, high transmission probabilities up to $0.9$, which is required for gate-tunable Andreev qubits and beneficial for braiding schemes of Majorana states. For the first time, we detect excitations of a spin-split pair of ABS and observe symmetry-broken ABS, a direct consequence of the spin-orbit coupling in the semiconductor.



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We theoretically investigate the behavior of Andreev levels in a single-orbital interacting quantum dot in contact to superconducting leads, focusing on the effect of electrostatic gating and applied magnetic field, as relevant for recent experimental spectroscopic studies. In order to account reliably for spin-polarization effects in presence of correlations, we extend here two simple and complementary approaches that are tailored to capture effective Andreev levels: the static functional renormalization group (fRG) and the self-consistent Andreev bound states (SCABS) theory. We provide benchmarks against the exact large-gap solution as well as NRG calculations and find good quantitative agreement in the range of validity. The large flexibility of the implemented approaches then allows us to analyze a sizeable parameter space, allowing to get a deeper physical understanding into the Zeeman field, electrostatic gate, and flux dependence of Andreev levels in interacting nanostructures.
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