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We demonstrate the feasibility of fabricating light-waveguiding microstructures in bulk single-crystal diamond by means of direct ion implantation with a scanning microbeam, resulting in the modulation of the refractive index of the ion-beam damaged crystal. Direct evidence of waveguiding through such buried microchannels is obtained with a phase-shift micro-interferometric method allowing the study of the multi-modal structure of the propagating electromagnetic field. The possibility of defining optical and photonic structures by direct ion writing opens a range of new possibilities in the design of quantum-optical devices in bulk single crystal diamond.
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Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of silicon-based microelectronics. However, the lack of practical and low-cost silicon-based monolithic light sources such as light-emitting diodes and, in particular, lasers is the main bottleneck for silicon photonics to become the key technology of the 21st century. After briefly reviewing the state of the art regarding silicon-based light-emitters, we discuss the challenges and benefits of a highly flexible approach: The epitaxial incorporation of group-IV nanostructures into crystalline silicon. We argue that a paradigm change for group-IV quantum dots (QDs) can be achieved by the intentional incorporation of extended point defects inside the QDs upon low energy ion implantation. The superior light-emission properties from such defect-enhanced quantum dots (DEQDs), our present understanding of their structural formation and light-emission mechanisms will be discussed. We will show that useful electrically-driven devices, such as light-emitting diodes (LEDs) can be fabricated employing optically active DEQD-material. These LEDs exhibit exceptional temperature-stability of their light emission properties even up to 100{deg}C, unprecedented for purely group-IV-based optoelectronic devices. Thereafter, we will assess the superior temperature stability of the structural properties of DEQDs upon thermal annealing, the scalability of the light-emission with the DEQD density and passivation schemes to further improve the optical properties. The chapter ends with a discussion of future research directions that will spark the development of this exciting field even further.
We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interferometric profilometry in both cases. Simulations are based on a model which accounts for the through-the-thickness variation of mechanical parameters in the material, as a function of ion type, fluence and energy. Surface deformation profiles and internal stress distributions are analyzed and numerical results are seen to adequately fit experimental data. Results allow us to draw conclusions on structural damage mechanisms in diamond for different MeV ion implantations.
Known methods for transverse confinement and guidance of light can be grouped into a few basic mechanisms, the most common being metallic reflection, total internal reflection and photonic-bandgap (or Bragg) reflection. All of them essentially rely on changes of the refractive index, that is on scalar properties of light. Recently, processes based on geometric Berry phases, such as manipulation of polarization states or deflection of spinning-light rays, have attracted considerable interest in the contexts of singular optics and structured light. Here, we disclose a new approach to light waveguiding, using geometric Berry phases and exploiting polarization states and their handling. This can be realized in structured three-dimensional anisotropic media, in which the optic axis lies orthogonal to the propagation direction and is modulated along it and across the transverse plane, so that the refractive index remains constant but a phase distortion can be imposed on a beam. In addition to a complete theoretical analysis with numerical simulations, we present a proof-of-principle experimental demonstration of this effect in a discrete element implementation of a geometric phase waveguide. The mechanism we introduce shows that spin-orbit optical interactions can play an important role in integrated optics and paves the way to an entire new class of photonic systems that exploit the vectorial nature of light.
The use of artificial gauge fields enables systems of uncharged particles to behave as if affected by external fields. Generated by geometry or external modulation, artificial gauge fields have been instrumental in demonstrating topological phenomena in many physical systems, including photonics, cold atoms and acoustic waves. Here, we demonstrate experimentally for the first time waveguiding by means of artificial gauge fields. To this end, we construct artificial gauge fields in a photonic waveguide array, by using waveguides with nontrivial trajectories. First, we show that tilting the waveguide arrays gives rise to gauge fields that are different in the core and the cladding, shifting their respective dispersion curves, and in turn confining the light to the core. In a more advanced setting, we demonstrate waveguiding in a medium with the same artificial gauge field and the same dispersion everywhere, but with a phase-shift in the gauge as the only difference between the core and the cladding. The phase-shifted sinusoidal trajectories of the waveguides give rise to waveguiding via bound states in the continuum. Creating waveguiding and bound states in the continuum by means of artificial gauge fields is relevant to a wide range of physical systems, ranging from photonics and microwaves to cold atoms and acoustics.
Due to their outstanding mechanical properties, diamond and diamond-like materials find significant technological applications ranging from well-established industrial fields (cutting tools, coatings, etc.) to more advanced mechanical devices as micro- and nano-electromechanical systems. The use of energetic ions is a powerful and versatile tool to fabricate three-dimensional micro-mechanical structures. In this context, it is of paramount importance to have an accurate knowledge of the effects of ion-induced structural damage on the mechanical properties of this material, firstly to predict potential undesired side-effects of the ion implantation process, and possibly to tailor the desired mechanical properties of the fabricated devices. We present an Atomic Force Microscopy (AFM) characterization of free-standing cantilevers in single-crystal diamond obtained by a FIB-assisted lift-off technique, which allows a determination of the Youngs modulus of the diamond crystal after the MeV ion irradiation process concurrent to the fabrication of the microstructures, and subsequent thermal annealing. The AFM measurements were performed with the beam-bending technique and show that the thermal annealing process allows for an effective recovery of the mechanical properties of the pristine crystal.
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