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Register a new userResonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
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We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160-240 ueV with an electric field dependence 1.2 +- 0.2 meV/(MV/m). A large valley splitting is an essential requirement to implement a physical electron spin qubit in a silicon quantum dot.
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We report the observation of two fundamental sub-gap transport processes through a quantum dot (QD) with a superconducting contact. The device consists of a carbon nanotube contacted by a Nb superconducting and a normal metal contact. First, we find a single resonance with position, shape and amplitude consistent with the theoretically predicted resonant Andreev tunneling (AT) through a single QD level. Second, we observe a series of discrete replicas of resonant AT at a separation of $sim145,mu$eV, with a gate, bias and temperature dependence characteristic for boson-assisted, inelastic AT, in which energy is exchanged between a bosonic bath and the electrons. The magnetic field dependence of the replicas amplitudes and energies suggest that two different bosons couple to the tunnel process.
Semiconductor quantum dots (QDs) offer a platform to explore the physics of quantum electronics including spins. Electron spins in QDs are considered good candidates for quantum bits in quantum information processing, and spin control and readout have been established down to a single electron level. We use these techniques to explore spin dynamics in a hybrid system, namely a QD coupled to a two dimensional electronic reservoir. The proximity of the lead results in relaxation dynamics of both charge and spin, the mechanism of which is revealed by comparing the charge and spin signal. For example, higher order charge tunneling events can be monitored by observing the spin. We expect these results to stimulate further exploration of spin dynamics in QD-lead hybrid systems and expand the possibilities for controlled spin manipulations.
We calculate the nonequilibrium conductance of a system of two capacitively coupled quantum dots, each one connected to its own pair of conducting leads. The system has been used recently to perform pseudospin spectroscopy by controlling independently the voltages of the four leads. The pseudospin is defined by the orbital occupation of one or the other dot. Starting from the SU(4) symmetric point of spin and pseudospin degeneracy in the Kondo regime, for an odd number of electrons in the system, we show how the conductance through each dot varies as the symmetry is reduced to SU(2) by a pseudo-Zeeman splitting, and as bias voltages are applied to any of the dots. We analize the expected behavior of the system in general, and predict characteristic fingerprint features of the SU(4) to SU(2) crossover that have not been observed so far.
We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of these holes lowers the electrostatic energy of the quantum dot state and switches the current carrying channel from fully open to fully closed with a high on/off ratio (> 50). The device can be reset by means of a bias voltage pulse. These properties are of interest for charge sensitive photon counting devices.
Coupling a quantum system to a bosonic environment always give rise to inelastic processes, which reduce the coherency of the system. We measure energy dependent rates for inelastic tunneling processes in a fully controllable two-level system of a double quantum dot. The emission and absorption rates are well repro-duced by Einsteins coefficients, which relate to the spontaneous emission rate. The inelastic tunneling rate can be comparable to the elastic tunneling rate if the boson occupation number becomes large. In the specific semiconductor double dot, the energy dependence of the inelastic rate suggests that acoustic phonons are coupled to the double dot piezoelectrically.
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