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Register a new userCurrent-induced asymmetric magnetoresistance due to energy transfer via quantum spin-flip process
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Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a conduction electron and a local magnetic moment through the exchange coupling. However, the same coupling can transfer not only spin but also energy, though the latter transfer mechanism has been largely ignored. Here we report on experimental evidence concerning the energy transfer in ferromagnet/heavy metal bilayers. The magnetoresistance (MR) is found to depend significantly on the current direction down to low in-plane currents, for which STT cannot play any significant role. Instead we find that the observed MR is consistent with the energy transfer mechanism through the quantum spin-flip process, which predicts short wavelength, current-direction-dependent magnon excitations in the THz frequency range. Our results unveil another aspect of current-induced magnetic excitation, and open a channel for the dc-current-induced generation of THz magnons.
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When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance fluctuations ($S_R$) which a passively applied current ($I$) converts to measurable voltage fluctuations ($S_{V}=I^{2}S_{R}$). We treat the LFN associated with spin accumulation as a nonequilibrium effect, and find that the noise power can be fitted in terms of the spin-polarized current by $S_{I}f=aIcoth(frac{I}{b})-ab$, resembling the form of the shot noise for a tunnel junction, but with current now taking the role of the bias voltage, and spin-flip probability taking the role of tunneling probability.
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Femtosecond laser pulses can induce ultrafast demagnetization as well as generate bursts of hot electron spin currents. In trilayer spin valves consisting of two metallic ferromagnetic layers separated by a nonmagnetic one, hot electron spin currents excited by an ultrashort laser pulse propagate from the first ferromagnetic layer through the spacer reaching the second magnetic layer. When the magnetizations of the two magnetic layers are noncollinear, this spin current exerts a torque on magnetic moments in the second ferromagnet. Since this torque is acting only within the sub-ps timescale, it excites coherent high-frequency magnons as recently demonstrated in experiments. Here, we calculate the temporal shape of the hot electron spin currents using the superdiffusive transport model and simulate the response of the magnetic system to the resulting ultrashort spin-transfer torque pulse by means of atomistic spin-dynamics simulations. Our results confirm that the acting spin-current pulse is short enough to excite magnons with frequencies beyond 1 THz, a frequency range out of reach for current induced spin-transfer torques. We demonstrate the formation of thickness dependent standing spin waves during the first picoseconds after laser excitation. In addition, we vary the penetration depth of the spin-transfer torque to reveal its influence on the excited magnons. Our simulations clearly show a suppression effect of magnons with short wavelengths already for penetration depths in the range of 1 nm confirming experimental findings reporting penetration depths below $2, {rm nm}$.
Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structures have been investigated. Direct experimental evidence is given that inserting ferromagnetic layers into a granular structure significantly enhances the magnetoresistance. The increase of the GMR effect is attributed to spin polarization effects. The large enhancement (up to more than a fourfold value) and the linear variation of the GMR in low magnetic fields are explained by scattering of the spin polarized conduction electrons on paramagnetic grains.
Optical interference is used to enhance light-matter interaction and harvest broadband light in ultrathin semiconductor absorber films on specular back-reflectors. However, the high-temperature processing in oxygen atmosphere required for oxide absorbers often degrades metallic back-reflectors and their specular reflectance. In order to overcome this problem, we present a newly developed film flip and transfer process that allows for high-temperature processing without degradation of the metallic back-reflector and without the need of passivation interlayers. The film flip and transfer process improves the performance of photoanodes for photoelectrochemical water splitting comprising ultrathin (< 20 nm) hematite (Fe2O3) films on silver-gold alloy (90 at% Ag-10 at% Au) back-reflectors. We obtain specular back-reflectors with high reflectance below hematite films, which is necessary for maximizing the productive light absorption in the hematite film and minimizing non-productive absorption in the back-reflector. Furthermore, the film flip and transfer process opens up a new route to attach thin film stacks onto a wide range of substrates including flexible or temperature sensitive materials.
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