No Arabic abstract
Todays supercapacitor energy storages are typically discrete devices aimed for printed boards and power applications. The development of autonomous sensor networks and wearable electronics and the miniaturisation of mobile devices would benefit substantially from solutions in which the energy storage is integrated with the active device. Nanostructures based on porous silicon (PS) provide a route towards integration due to the very high inherent surface area to volume ratio and compatibility with microelectronics fabrication processes. Unfortunately, pristine PS has limited wettability and poor chemical stability in electrolytes and the high resistance of the PS matrix severely limits the power efficiency. In this work, we demonstrate that excellent wettability and electro-chemical properties in aqueous and organic electrolytes can be obtained by coating the PS matrix with an ultra-thin layer of titanium nitride by atomic layer deposition. Our approach leads to very high specific capacitance (15 F/cm$^3$), energy density (1.3 mWh/cm$^3$), power density (up to 214 W/cm$^3$) and excellent stability (more than 13,000 cycles). Furthermore, we show that the PS-TiN nanomaterial can be integrated inside a silicon chip monolithically by combining MEMS and nanofabrication techniques. This leads to realisation of in-chip supercapacitor, i.e., it opens a new way to exploit the otherwise inactive volume of a silicon chip to store energy.
Titanium nitride (TiN) shows low resistivity at room temperature, high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by X-ray diffraction and 4-terminal transport measurements. Element specific X-ray absorption spectroscopy revealed pure TiN in the bulk. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device (SQUID) and anomalous Hall effect (AHE) for Mn2.45Ga. Magneto optical Kerr effect (MOKE) measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature.
SuperSpec is a novel on-chip spectrometer we are developing for multi-object, moderate resolution (R = 100 - 500), large bandwidth (~1.65:1) submillimeter and millimeter survey spectroscopy of high-redshift galaxies. The spectrometer employs a filter bank architecture, and consists of a series of half-wave resonators formed by lithographically-patterned superconducting transmission lines. The signal power admitted by each resonator is detected by a lumped element titanium nitride (TiN) kinetic inductance detector (KID) operating at 100 - 200 MHz. We have tested a new prototype device that achieves the targeted R = 100 resolving power, and has better detector sensitivity and optical efficiency than previous devices. We employ a new method for measuring photon noise using both coherent and thermal sources of radiation to cleanly separate the contributions of shot and wave noise. We report an upper limit to the detector NEP of $1.4times10^{-17}$ W Hz$^{-1/2}$, within 10% of the photon noise limited NEP for a ground-based R=100 spectrometer.
Squeezed states are a primary resource for continuous-variable (CV) quantum information processing. To implement CV protocols in a scalable and robust way, it is desirable to generate and manipulate squeezed states using an integrated photonics platform. In this Letter, we demonstrate the generation of quadrature-phase squeezed states in the radio-frequency carrier sideband using a small-footprint silicon-nitride microresonator with a dual-pumped four-wave-mixing process. We record a squeezed noise level of 1.34 dB ($pm$0.16 dB) below the photocurrent shot noise, which corresponds to 3.09 dB ($pm$0.49 dB) of quadrature squeezing on chip. We also show that it is critical to account for the nonlinear behavior of the pump fields to properly predict the squeezing that can be generated in this system. This technology represents a significant step toward creating and manipulating large-scale CV cluster states that can be used for quantum information applications including universal quantum computing.
Using a simple mathematical model, we demonstrate that statistical kinetics of phase-transforming nanoparticles in porous electrodes results in macroscopic non-monotonic transient currents, which could be misinterpreted as the nucleation and growth mechanism by the Kolmogorov-Johnson-Mehl-Avrami (KJMA) theory. Our model decouples the roles of nucleation and surface reaction in the electrochemically driven phase-transformation process by a special activation rate and the mean particle-filling speed of active nanoparticles, which can be extracted from the responses of porous electrodes to identify the dynamics in single composing nanoparticles.
Electrical conductivity of porous silicon fabricated form heavily doped p-type silicon is very sensitive to NO$_2$, even at concentrations below 100 ppb. However, sensitivity strongly depends on the porous microstructure. The structural difference between sensitive and insensitive samples is independently confirmed by microscopy images and by light scattering behavior. A way to change the structure is by modifying the composition of the electrochemical solution. We have found that best results are achieved using ethanoic solutions with HF concentration levels between 13% and 15%.